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    Semiconductor light emitting device and method for manufacturing same
    3.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09276379B2

    公开(公告)日：2016-03-01

    申请号：US14495904

    申请日：2014-09-25

    申请人： Panasonic Corporation

    发明人： Tomoya Satoh ,  Takeshi Yokoyama ,  Shouichi Takasuka ,  Isao Kidoguchi

    IPC分类号： H01L27/15 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L23/532 ,  H01L21/285 ,  H01L21/316

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L21/28575 ,  H01L23/53223 ,  H01L2924/0002 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/34313 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2

    摘要翻译： 半导体发光器件包括作为III-V族半导体混晶的第一导电覆层，有源层和第二导电覆层。 第二导电覆层具有包括第一层，第二层和第三层的至少三层的叠层结构，该第三层以更靠近有源层的顺序布置。 第二层和第三层包括在条纹脊中，第二层位于脊的裙部。 第一层的表面是脊的两侧的平坦部分。 当第一层，第二层和第三层的Al组分分别为X1，X2和X3时，满足关系X2> X1，X3。 当第一层，第二层和第三层的膜厚为D1，D2和D3时，满足关系D2

    Surface emitting laser, light source, and optical module
    5.
    发明授权
    Surface emitting laser, light source, and optical module 有权
    表面发射激光，光源和光学模块

    公开(公告)号：US08755422B2

    公开(公告)日：2014-06-17

    申请号：US13187838

    申请日：2011-07-21

    申请人： Hitoshi Shimizu ,  Yasumasa Kawakita

    发明人： Hitoshi Shimizu ,  Yasumasa Kawakita

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18311 ,  G02B6/4214 ,  H01S5/02292 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3054 ,  H01S5/3215

    摘要： A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

    摘要翻译： 表面发射激光器包括下层和上层多层反射镜，形成在下层和上层多层反射镜之间的第一导电型和第二导电型接触层，形成在第一导电型和第二导电型之间的有源层 型接触层，形成在第二导电型接触层和有源层之间的电流限制层以及横跨电流限制层彼此形成的第一和第二组成梯度层。 形成第一组成梯度层和第二组成梯度层，使得每个层的带隙能量从电流限制层单调减小到相邻层，并且在生长方向上接近相邻层的带隙能量。

    NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    6.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号：US20130223463A1

    公开(公告)日：2013-08-29

    申请号：US13856633

    申请日：2013-04-04

    申请人： Panasonic Corporation

    发明人： Yasutoshi KAWAGUCHI ,  Toshitaka SHIMAMOTO ,  Akihiko ISHIBASHI ,  Isao KIDOGUCHI ,  Toshiya YOKOGAWA

    IPC分类号： H01S5/32

    CPC分类号： H01S5/3215 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

    摘要： A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

    摘要翻译： 根据本发明的氮化物半导体器件包括p型氮化物半导体层，n型氮化物半导体层和介于p型氮化物半导体层和n型氮化物半导体层之间的有源层。 p型氮化物半导体层包括：含有Al和Mg的第一p型氮化物半导体层; 以及包含Mg的第二p型氮化物半导体层。 第一p型氮化物半导体层位于有源层和第二p型氮化物半导体层之间，第二p型氮化物半导体层的带隙比第一p型氮化物半导体层的带隙大 层。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20130142210A1

    公开(公告)日：2013-06-06

    申请号：US13658239

    申请日：2012-10-23

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  SONY CORPORATION

    发明人： Takashi KYONO ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA ,  Noriyuki FUTAGAWA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

    摘要： A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

    摘要翻译： 氮化物半导体发光器件具有半导体脊，并且包括在有源层和n型包层之间的第一内层和在有源层和p型包层之间的第二内部半导体层。 第一内层，活性层和第二内层构成核心区域。 n型包层，芯区和p型包层构成波导结构。 有源层和第一内层构成相对于n型包层的氮化物半导体的c面的参考平面以大于零的角度倾斜的第一异质结。 阱层的压电极化在从p型包层朝向n型包层的方向上取向。 第二内层和InGaN阱层构成第二异质结。 脊底与第二异质结之间的距离为200nm以下。 脊包括在第二内层和p型包层之间的第三异质结。

    Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
    8.
    发明授权
    Monolithically integrated laser diode chip having a construction as a multiple beam laser diode 有权
    具有构造为多光束激光二极管的单片集成激光二极管芯片

    公开(公告)号：US08194712B2

    公开(公告)日：2012-06-05

    申请号：US12217100

    申请日：2008-06-30

    申请人： Martin Müller ,  Günther Grönninger ,  Alexander Behres

    发明人： Martin Müller ,  Günther Grönninger ,  Alexander Behres

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4043 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/4018

    摘要： A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.

    摘要翻译： 具有构造为多光束激光二极管的单片集成激光二极管芯片，其在由GaAs构成的半导体衬底（3）上具有至少两个激光堆叠（4a，4b，4c） 每个都包含活动区域（7）。 有源区（7）分别布置在波导层（8）之间。 每个波导层（8）在远离有源区的一侧与包层（6）相邻。 至少一个激光堆叠（4a，4b，4c）的至少一个波导层（8）或包覆层（6）包括Al x Ga 1-x As，其中0和n 1; x 1和n 1;以及至少一个来自主体的附加材料 III或V族，使得包含至少一个附加元件的至少一个波导层（8）或包层（6）与由GaAs构成的半导体衬底（3）之间的晶格失配减小。 这增加了激光二极管芯片的寿命。

    SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION METHOD OF SEMICONDUCTOR LASER
    10.
    发明申请
    SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION METHOD OF SEMICONDUCTOR LASER 有权
    半导体激光器，半导体激光器件和半导体激光器的制造方法

    公开(公告)号：US20110222569A1

    公开(公告)日：2011-09-15

    申请号：US12879541

    申请日：2010-09-10

    申请人： Kazutaka TAKEDA ,  Takashi KONDO ,  Hideaki OZAWA

    发明人： Kazutaka TAKEDA ,  Takashi KONDO ,  Hideaki OZAWA

    IPC分类号： H01S5/028 ,  H01L33/46

    CPC分类号： H01S5/18388 ,  H01L2224/48091 ,  H01S5/0071 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18361 ,  H01S5/2215 ,  H01S5/3215 ,  H01L2924/00014

    摘要： A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer.

    摘要翻译： 一种半导体激光器，包括：基板; 形成在所述基板上的第一导电类型的第一半导体多层反射器; 形成在所述第一半导体多层反射器上的有源区; 形成在有源区上的第二导电类型的第二半导体多层反射器; 以及形成在所述第一半导体多层反射器之下或所述第二半导体多层反射器之下的第一导电类型或第二导电类型的中间半导体层。 在中间半导体层中形成通过氧化中间半导体层的一部分而形成的氧化区域和与氧化区域接触的未氧化区域，未氧化区域与第一或第二半导体多层反射体电连接， 在有源区域中产生的光束在氧化区域和未氧化区域之间的边界处反射到与基板的主表面平行的方向，并且从中间半导体层的侧表面发射。