公开(公告)号：US20190157845A1

公开(公告)日：2019-05-23

申请号：US15819848

申请日：2017-11-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Effendi Leobandung ,  Ning Li ,  Tak H. Ning

IPC: H01S5/40 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01S5/4031 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1017 ,  H01S5/166 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/323 ,  H01S5/34313 ,  H01S5/34353

Abstract: A method of forming a pair of edge-emitting lasers is provided. The method includes forming a mesa from a substrate, forming a cover layer on the substrate around the mesa, and forming a first barrier layer on each of opposite sidewalls of the mesa. The method further includes forming a quantum well layer on each of the barrier layers, forming a second barrier layer on each of the quantum well layers, and forming a cladding layer on each of the second barrier layers.

公开(公告)号：US10084282B1

公开(公告)日：2018-09-25

申请号：US15676825

申请日：2017-08-14

Applicant: The United States of America, as represented by the Secretary of the Air Force

Inventor： Ron Kaspi ,  Chi Yang

IPC: H01S5/10 ,  H01S5/065 ,  H01S5/34

CPC classification number: H01S5/0655 ,  H01S5/1017 ,  H01S5/22 ,  H01S5/3401 ,  H01S5/3402 ,  H01S2301/166

Abstract: A broad area quantum cascade laser subject to having high order transverse optical modes during operation includes a laser cavity at least partially enclosed by walls, and a perturbation in the laser cavity extending from one or more of the walls. The perturbation may have a shape and a size sufficient to suppress high order transverse optical modes during operation of the broad area quantum cascade laser, whereby a fundamental transverse optical mode is selected over the high order transverse optical modes. As a result, the fundamental transverse mode operation in broad-area quantum cascade lasers can be regained, when it could not otherwise be without such a perturbation.

公开(公告)号：US09966735B2

公开(公告)日：2018-05-08

申请号：US15188419

申请日：2016-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01S5/00 ,  H01S5/227 ,  H01S5/026 ,  H01S3/063 ,  H01S3/23 ,  H01S5/16 ,  H01S5/20 ,  H01S5/30 ,  H01S5/125 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

公开(公告)号：US20180076594A1

公开(公告)日：2018-03-15

申请号：US15623937

申请日：2017-06-15

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio SHIGIHARA ,  Satoshi NISHIKAWA

IPC: H01S5/026 ,  H01S5/22

CPC classification number: H01S5/026 ,  H01S5/0014 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1025 ,  H01S5/168 ,  H01S5/22 ,  H01S2301/166

Abstract: A broad area semiconductor laser device includes a waveguide region and a filter region. The waveguide region includes an active region into which current is injected, and a cladding region that sandwiches the active region. The active region either protrudes or is recessed with respect to the filter region, so as to promote the divergence of higher order modes in the filter region.

公开(公告)号：US20170195062A1

公开(公告)日：2017-07-06

申请号：US15398712

申请日：2017-01-04

Applicant: Infinera Corporation

Inventor： Peter W. Evans ,  Jeffrey T. Rahn ,  Vikrant Lal ,  Miguel Iglesias Olmedo ,  Amir Hosseini ,  Parmijit Samra ,  Scott Corzine ,  Ryan W. Going

IPC: H04B10/61 ,  G02B6/12 ,  G02B6/28 ,  H04B10/50 ,  G02B26/04

CPC classification number: H01S5/1017 ,  G02B6/12004 ,  G02B6/2813 ,  G02B26/04 ,  G02B2006/12121 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/58 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1215 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3214 ,  H01S2301/176 ,  H04B10/2507 ,  H04B10/40 ,  H04B10/503 ,  H04B10/616 ,  H04B10/67

Abstract: Methods, systems, and apparatus, including an optical receiver including a laser including a gain section; and a first tunable reflector configured to output a reference signal; a first coupler formed over the substrate; a shutter variable optical attenuator formed over the substrate, the shutter variable optical attenuator including an input port configured to receive the first portion of the reference signal from the laser; and an output port configured to provide or to block, based on a control signal, the first portion of the reference signal from the laser; and a second coupler including a first port configured to receive the first portion of the reference signal from the shutter variable optical attenuator; and a second port configured to (i) provide the first portion of the reference signal from the shutter variable optical attenuator to an optical analyzer or (ii) receive a data signal from a transmitter.

公开(公告)号：US09634465B2

公开(公告)日：2017-04-25

申请号：US14203825

申请日：2014-03-11

Applicant: FUJITSU LIMITED

Inventor： Manabu Matsuda

IPC: H01S5/12 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/22 ,  H01S5/223

CPC classification number: H01S5/124 ,  H01S5/0622 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1225 ,  H01S5/22 ,  H01S5/2218 ,  H01S5/2231

Abstract: An optical device includes an active layer disposed over a semiconductor substrate, a diffraction grating disposed over the active layer, a clad layer partly disposed over the diffraction grating, at least one first burying material layer disposed beside side surfaces of end portions of the clad layer over the diffraction grating, and at least one second burying material layer disposed beside side surfaces of a center portion of the clad layer over the diffraction grating. A refractive index of the at least one first burying material layer is different from a refractive index of the at least are second burying material layer.

公开(公告)号：US09407063B2

公开(公告)日：2016-08-02

申请号：US14627895

申请日：2015-02-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

公开(公告)号：US09385507B2

公开(公告)日：2016-07-05

申请号：US14968845

申请日：2015-12-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Andreas Breidenassel ,  Alfred Lell

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/22 ,  H01S5/026

CPC classification number: H01S5/1003 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0264 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/1237 ,  H01S5/2063 ,  H01S5/22 ,  H01S2301/166

Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).

公开(公告)号：US20150207294A1

公开(公告)日：2015-07-23

申请号：US14672947

申请日：2015-03-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Peter Brick ,  Uwe Strauss

IPC: H01S5/10

CPC classification number: H01S5/1082 ,  H01S5/0035 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/204 ,  H01S5/3095 ,  H01S5/32 ,  H01S5/3215 ,  H01S5/4043 ,  H01S2301/18 ,  H01S2301/185 ,  H01S2301/206

Abstract: A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract translation: 一种提出用于制造辐射发射部件的方法，其中规定了垂直于部件的主发射轴的方向上的近场的场分布。 根据近场的场分布，确定沿该方向的折射率曲线。 确定组件的结构，使得组件将具有先前确定的折射率曲线。 该组件根据先前确定的结构构造。 还公开了一种辐射发射元件。

公开(公告)号：US08982921B2

公开(公告)日：2015-03-17

申请号：US13761911

申请日：2013-02-07

Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.

Inventor： Ruiyu Fang ,  Giammarco Rossi ,  Alessandro Stano ,  Giuliana Morello ,  Paola-Ida Gotta ,  Roberto Paoletti ,  Pietro Della Casa ,  Giancarlo Meneghini

IPC: H01S5/00 ,  H01L33/46 ,  H01S5/16 ,  H01S5/20

CPC classification number: H01L33/46 ,  H01S5/0201 ,  H01S5/028 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22

Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.

Abstract translation: 边缘发射光学半导体结构具有衬底，形成在衬底上的活性多量子阱（MQW）区域和在第一和第二蚀刻端面之间延伸的脊形波导。 第一蚀刻端面设置在第一窗口中，而第二蚀刻端面设置在第二窗口中。 第一刻蚀的端面在第一窗口中的一对凹室之间延伸，并且第二蚀刻端面在第二窗口中的一对凹室之间延伸。 其中提供两个这样的结构的集成装置具有两个结构彼此邻接的H形窗。 该结构可以使用涉及第一掩模以形成脊波导的方法制造，然后是第二掩模和蚀刻工艺以形成窗口。