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    Laser light source
    1.
    发明授权
    Laser light source 有权
    激光光源

    公开(公告)号：US09531158B2

    公开(公告)日：2016-12-27

    申请号：US14951096

    申请日：2015-11-24

    申请人： OSRAM OPTO SEMICONDUCTORS GMBH

    发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

    IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  H01S5/22

    CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

    摘要： A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.

    摘要翻译： 一种激光源，包括在衬底上的半导体层序列，并且具有有源区和具有第一和第二部分区域的辐射耦合区域和滤波器结构。 有源区域产生相干的第一电磁辐射和非相干的第二电磁辐射，相干的第一电磁辐射沿着发射方向由第一部分区域发射，非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的区域上的至少一个滤波器元件，该滤波器元件的延伸方向平行于发射方向并且远离衬底。

    Adjustable optical signal delay module and method thereof
    2.
    发明授权
    Adjustable optical signal delay module and method thereof 有权
    可调光信号延迟模块及其方法

    公开(公告)号：US08059335B2

    公开(公告)日：2011-11-15

    申请号：US12314720

    申请日：2008-12-16

    申请人： Jye hong Chen ,  Wei-Che Kao ,  Peng-Chun Peng ,  Chun-Ting Lin ,  Fang Ming Wu ,  Po Tsung Shih ,  Sien Chi

    发明人： Jye hong Chen ,  Wei-Che Kao ,  Peng-Chun Peng ,  Chun-Ting Lin ,  Fang Ming Wu ,  Po Tsung Shih ,  Sien Chi

    IPC分类号： H01S4/00 ,  H04B10/12

    CPC分类号： H01S5/50 ,  H01S5/06233 ,  H01S5/068 ,  H01S5/1078

    摘要： An adjustable optical signal delay module which adjusts power of an amplified spontaneous emission generated by a semiconductor optical amplifier and feeds the adjusted amplified spontaneous emission back to the semiconductor optical amplifier in a direction opposite to an optical signal being amplified by the semiconductor optical amplifier is provided. The feedback of the adjusted amplified spontaneous emission varies a group refractive index of the semiconductor optical amplifier and delays the transmission of an optical signal through the semiconductor optical amplifier. By that arrangement, the adjustable optical delay module obviates the need for the pump laser conventionally required by a coherent population oscillation mechanism. The feedback optical loop includes a variable optical attenuator, an optical filter, and optical circulators. A user can control the delay timing of optical signals via adjusting optical power in the feedback optical loop.

    摘要翻译： 提供一种可调光信号延迟模块，其调整由半导体光放大器产生的放大的自发辐射的功率，并且将经调整的放大的自发发射反馈到与由半导体光放大器放大的光信号相反的方向的半导体光放大器 。 调整放大的自发发射的反馈改变了半导体光放大器的组折射率，并延迟了通过半导体光放大器的光信号的传输。 通过这种布置，可调光学延迟模块消除了对于通常由相干群体振荡机制所要求的泵浦激光器的需要。 反馈光环路包括可变光衰减器，滤光器和光循环器。 用户可以通过调整反馈光环路中的光功率来控制光信号的延时定时。

    Semiconductor laser with reduced heat loss
    3.
    发明授权
    Semiconductor laser with reduced heat loss 有权
    半导体激光器具有减少的热损失

    公开(公告)号：US07356062B2

    公开(公告)日：2008-04-08

    申请号：US10926465

    申请日：2004-08-25

    申请人： Peter Brick

    发明人： Peter Brick

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/041 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/141 ,  H01S5/18319 ,  H01S5/18352 ,  H01S5/34 ,  H01S5/343

    摘要： A semiconductor laser having a semiconductor chip (1) which contains an active layer (5) and emits radiation in a main radiating direction (6). The active layer (5) is structured in a direction perpendicular to the main radiating direction (6) in order to reduce heating of the semiconductor chip (1) by spontaneously emitted radiation (10).

    摘要翻译： 一种具有半导体芯片（1）的半导体激光器，其包含活性层（5）并沿主辐射方向（6）发射辐射。 活性层（5）沿垂直于主辐射方向（6）的方向构造，以便通过自发发射的辐射（10）减少半导体芯片（1）的加热。

    Gain optimization for stable single mode operation of external cavity laser
    5.
    发明申请
    Gain optimization for stable single mode operation of external cavity laser 有权
    增益优化用于外腔激光器的稳定单模操作

    公开(公告)号：US20040170208A1

    公开(公告)日：2004-09-02

    申请号：US10376361

    申请日：2003-02-27

    发明人： Sergei Sochava

    IPC分类号： H01S003/10 ,  H01S003/13 ,  H01S003/082

    CPC分类号： B82Y20/00 ,  H01S5/1078 ,  H01S5/141 ,  H01S5/2004 ,  H01S5/3086 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34326 ,  H01S5/3438

    摘要： Known laser diode selections are limited to those designed for high power applications (high gain) or those designed for stable single mode operation in an external cavity (low gain). Exponential gain of laser diodes implemented according to embodiments of the present invention is improved (i.e., optimized) to provide both high output power and stability in an external cavity. This is accomplished by controlling the number of quantum wells, light confinement factor, and the transparency current of the laser diode.

    摘要翻译： 已知的激光二极管选择仅限于为高功率应用（高增益）设计的激光二极管选择，或限于外部腔体（低增益）中稳定单模工作的设计。 根据本发明的实施例实现的激光二极管的指数增益被改进（即优化），以在外部空腔中提供高输出功率和稳定性。 这是通过控制量子阱的数量，光限制因子和激光二极管的透明度电流来实现的。

    Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element
    6.
    发明授权
    Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element 有权
    具有InGan有源层的带状半导体发光元件，与包含波长选择元件的光谐振器组合

    公开(公告)号：US06728285B2

    公开(公告)日：2004-04-27

    申请号：US10360655

    申请日：2003-02-10

    申请人： Toshiro Hayakawa

    发明人： Toshiro Hayakawa

    IPC分类号： H02S514

    CPC分类号： B82Y20/00 ,  H01L33/0045 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/141 ,  H01S5/2231 ,  H01S5/34333

    摘要： A semiconductor light emitting apparatus includes a semiconductor light emitting element which includes a stripe structure and an active layer made of an InGaN material, and emits first light without laser oscillation; an optical resonator; and a first wavelength selection unit which allows resonance, in the optical resonator, of second light having a selected wavelength included in the first light emitted by the semiconductor light emitting element. Alternatively, instead of the first wavelength selection unit, a second wavelength selection unit which allows output of only the above second light from the semiconductor light emitting apparatus may be provided. In this case, the semiconductor light emitting apparatus may further include an optical detector which detects intensity of the second light; and an output regularizing unit which drives the semiconductor light emitting element based on the detected intensity so as to regularize the intensity of the second light.

    摘要翻译： 半导体发光装置包括半导体发光元件，其包括条状结构和由InGaN材料制成的有源层，并且发射没有激光振荡的第一光; 光学谐振器; 以及第一波长选择单元，其允许在所述光学谐振器中谐振具有由所述半导体发光元件发射的所述第一光中的所选波长的第二光。 或者，代替第一波长选择单元，可以提供允许仅输出来自半导体发光装置的上述第二光的第二波长选择单元。 在这种情况下，半导体发光装置还可以包括检测第二光的强度的光检测器; 以及输出规则化单元，其基于检测到的强度驱动半导体发光元件，以使第二光的强度正规化。

    Wavelength-tunable laser apparatus
    7.
    发明申请
    Wavelength-tunable laser apparatus 失效
    波长可调激光设备

    公开(公告)号：US20030169785A1

    公开(公告)日：2003-09-11

    申请号：US10370796

    申请日：2003-02-20

    发明人： Jong-Ryeol Kim

    IPC分类号： H01S003/10 ,  H01S003/08

    CPC分类号： H01S5/026 ,  H01S5/06258 ,  H01S5/106 ,  H01S5/1078 ,  H01S5/12 ,  H01S5/40 ,  H01S5/5045 ,  H01S5/5072

    摘要： The present invention provides a wavelength-tunable laser apparatus which is capable of obtaining a high output while suppressing the generation of spontaneous emission, as well as having a broad wavelength-tunable range. In particular, the apparatus includes a distributed reflector section which comprises a first active layer for oscillating light, a first grating for filtering the light generated in the first active layer, and upper and lower clad layers between which the first active layer and the first grating are interposed; a gain section which is formed adjoining to a side of the distributed reflector section and comprises a second active layer disposed between the upper and lower clad layers for adjusting the gain of the light; and a gain-clamped semiconductor optical amplifier section formed adjoining to a side of the gain section, wherein the gain-clamped semiconductor optical amplifier section comprises a third active layer disposed between the upper and lower clad layers for amplifying the light to have a clamped gain and a second grating for filtering the light passing through the third active layer.

    摘要翻译： 本发明提供一种波长可调谐激光装置，其能够在抑制自发发射的产生的同时获得高输出，并且具有宽的波长可调范围。 特别地，该装置包括分布式反射器部分，其包括用于振荡光的第一有源层，用于滤波在第一有源层中产生的光的第一光栅以及第一有源层和第一光栅之间的上和下包层 插入; 所述增益部分形成在所述分布式反射器部分的一侧，并且包括设置在所述上​​部和下部包层之间的用于调节光的增益的第二有源层; 以及与所述增益部分的一侧相邻形成的增益钳位半导体光放大器部分，其中所述增益钳位半导体光放大器部分包括设置在所述上​​包层和下包层之间的第三有源层，用于放大所述光以具有钳位增益 以及用于过滤穿过第三有源层的光的第二光栅。

    Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element
    8.
    发明申请
    Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element 有权
    具有InGan有源层的带状半导体发光元件，与包含波长选择元件的光谐振器组合

    公开(公告)号：US20030147448A1

    公开(公告)日：2003-08-07

    申请号：US10360655

    申请日：2003-02-10

    申请人： FUJI PHOTO FILM CO., LTD.

    发明人： Toshiro Hayakawa

    IPC分类号： H01S003/13 ,  H01S005/00 ,  H01S003/08 ,  H01S003/082

    CPC分类号： B82Y20/00 ,  H01L33/0045 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/141 ,  H01S5/2231 ,  H01S5/34333

    摘要： A semiconductor light emitting apparatus includes a semiconductor light emitting element which includes a stripe structure and an active layer made of an InGaN material, and emits first light without laser oscillation; an optical resonator; and a first wavelength selection unit which allows resonance, in the optical resonator, of second light having a selected wavelength included in the first light emitted by the semiconductor light emitting element. Alternatively, instead of the first wavelength selection unit, a second wavelength selection unit which allows output of only the above second light from the semiconductor light emitting apparatus may be provided. In this case, the semiconductor light emitting apparatus may further include an optical detector which detects intensity of the second light; and an output regularizing unit which drives the semiconductor light emitting element based on the detected intensity so as to regularize the intensity of the second light.

    摘要翻译： 半导体发光装置包括半导体发光元件，其包括条状结构和由InGaN材料制成的有源层，并且发射没有激光振荡的第一光; 光学谐振器; 以及第一波长选择单元，其允许在所述光学谐振器中谐振具有由所述半导体发光元件发射的所述第一光中的所选波长的第二光。 或者，代替第一波长选择单元，可以提供允许仅输出来自半导体发光装置的上述第二光的第二波长选择单元。 在这种情况下，半导体发光装置还可以包括检测第二光的强度的光检测器; 以及输出规则化单元，其基于检测到的强度驱动半导体发光元件，以使第二光的强度正规化。

    Method for biasing semiconductor lasers
    9.
    发明授权
    Method for biasing semiconductor lasers 失效
    偏置半导体激光器的方法

    公开(公告)号：US6016326A

    公开(公告)日：2000-01-18

    申请号：US990267

    申请日：1997-12-15

    申请人： Paul Robert Claisse ,  Philip Anthony Kiely

    发明人： Paul Robert Claisse ,  Philip Anthony Kiely

    IPC分类号： H01S5/026 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/183 ,  H01S3/19

    CPC分类号： H01S5/0683 ,  H01S5/0264 ,  H01S5/0427 ,  H01S5/1078 ,  H01S5/183

    摘要： A method for biasing a semiconductor laser (12) at the threshold level of the semiconductor laser (12). The method includes applying pilot tone signals having the same frequency to a bias current and a drive current of the semiconductor laser (12). A lateral detector (13) generates a photocurrent from spontaneous emissions of the semiconductor laser (12). Further, the method includes biasing the semiconductor laser (12) using a pilot tone signal of the photocurrent.

    摘要翻译： 一种用于在半导体激光器（12）的阈值电平处偏置半导体激光器（12）的方法。 该方法包括将具有相同频率的导频音信号应用于半导体激光器（12）的偏置电流和驱动电流。 横向检测器（13）从半导体激光器（12）的自发发射产生光电流。 此外，该方法包括使用光电流的导频音信号来偏置半导体激光器（12）。