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公开(公告)号：US12119620B2
公开(公告)日：2024-10-15
申请号：US17430658
申请日：2020-01-16
发明人： Jens Ebbecke
CPC分类号： H01S5/4043 , H01S5/02461 , H01S5/0282 , H01S5/0287
摘要： The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.
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2.发明授权公开(公告)号：US12119613B2
公开(公告)日：2024-10-15
申请号：US16985916
申请日：2020-08-05
发明人： Atsushi Sugiyama , Akio Ito , Tadataka Edamura
CPC分类号： H01S5/0287 , G02B1/113 , H01S5/166 , H01S5/3402 , H01S5/12 , H01S5/22
摘要： A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
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公开(公告)号：US20240332897A1
公开(公告)日：2024-10-03
申请号：US18477423
申请日：2023-09-28
发明人： Atsushi NAKAMURA
CPC分类号： H01S5/1206 , H01S5/028 , H01S5/1237 , H01S5/124 , H01S5/125 , H01S5/0421 , H01S5/34
摘要： To obtain both a high power and a single mode oscillation of a semiconductor laser, the semiconductor laser includes a diffraction grating layer. The diffraction grating layer includes a λ/4 phase shift portion, and includes first and second regions. The first region has a diffraction pattern arranged therein, the diffraction pattern being formed to reflect a light beam having a Bragg wavelength and having first and second refractive index regions alternately arranged therein. The second region is provided with a first portion that reflects the light beam having the Bragg wavelength in the first region and a second portion that transmits the Bragg wavelength in the first region. The second portion is formed of the first and second refractive index regions. A total length of the first portion in a direction in which the diffraction grating layer extends is shorter than a length of the first region.
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公开(公告)号：US20240291240A1
公开(公告)日：2024-08-29
申请号：US18655906
申请日：2024-05-06
IPC分类号： H01S5/32 , B82Y20/00 , H01S3/04 , H01S3/067 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/00 , H01S5/02251 , H01S5/02253 , H01S5/024 , H01S5/028 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： H01S5/3216 , H01S3/0675 , H01S3/06754 , H01S5/02251 , H01S5/02253 , H01S5/1064 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , B82Y20/00 , H01S3/04 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/146 , H01S5/2222 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US12057676B2
公开(公告)日：2024-08-06
申请号：US17294816
申请日：2019-11-11
发明人： Thomas Schwarz , Andreas Plößl , Jörg Erich Sorg , Frank Singer
IPC分类号： H01S5/02255 , H01S5/02 , H01S5/02208 , H01S5/02234 , H01S5/028 , H01S5/40
CPC分类号： H01S5/02208 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/02234 , H01S5/02255 , H01S5/028 , H01S5/4031
摘要： In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.
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公开(公告)号：US12046875B2
公开(公告)日：2024-07-23
申请号：US17313389
申请日：2021-05-06
CPC分类号： H01S5/3401 , H01S5/0425 , H01S5/0604 , H01S5/3086 , H01S5/3402 , H01S5/0287 , H01S5/04257 , H01S5/12 , H01S5/22 , H01S2302/02
摘要： A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.
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公开(公告)号：US20240243554A1
公开(公告)日：2024-07-18
申请号：US18376661
申请日：2023-10-04
发明人： Eunsung LEE , Junhee Choi , Kiho Kong , Joohun Han
CPC分类号： H01S5/323 , H01S5/0282 , H01S5/4087
摘要： Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.
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公开(公告)号：US12009636B2
公开(公告)日：2024-06-11
申请号：US18164285
申请日：2023-02-03
IPC分类号： H01S5/00 , H01S3/067 , H01S5/02251 , H01S5/02253 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343 , B82Y20/00 , H01S3/04 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/024 , H01S5/028 , H01S5/14
CPC分类号： H01S5/3216 , H01S3/0675 , H01S3/06754 , H01S5/02251 , H01S5/02253 , H01S5/1064 , H01S5/2018 , H01S5/2077 , H01S5/2205 , H01S5/2206 , H01S5/227 , H01S5/3213 , H01S5/34 , H01S5/3406 , H01S5/34306 , H01S5/3434 , B82Y20/00 , H01S3/04 , H01S3/094003 , H01S3/094011 , H01S3/09415 , H01S3/302 , H01S5/0064 , H01S5/024 , H01S5/0287 , H01S5/1039 , H01S5/146 , H01S5/2222 , H01S2301/03 , H01S2301/166
摘要： An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.
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公开(公告)号：US20240170913A1
公开(公告)日：2024-05-23
申请号：US17990221
申请日：2022-11-18
发明人： Chih-Sung CHANG , Wei-Yu YEN , Wayne JAN , Tau-Jin WU
IPC分类号： H01S5/024 , H01S5/0236 , H01S5/028 , H01S5/183
CPC分类号： H01S5/02469 , H01S5/0236 , H01S5/02476 , H01S5/028 , H01S5/18308 , H01S5/18375
摘要： A surface light emitting element with high heat dissipation and uniform light emission includes a metal reflective layer, a first metal conductive layer, an omnidirectional reflecting current isolation layer, a first-type semiconductor current spreading layer, a light emitting diode layer, a second-type semiconductor current spreading layer and a second metal conductive layer. The metal reflective layer includes at least one surrounding wall structure. The omnidirectional reflecting current isolation layer is arranged on the metal reflective layer and entirely covers the two sides of the at least one surrounding wall structure to form at least one cylindrical channel. The light emitting diode layer is located in the at least one cylindrical channel.
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公开(公告)号：US20240146020A1
公开(公告)日：2024-05-02
申请号：US18280195
申请日：2022-02-21
申请人： HORIBA, LTD.
发明人： Yusuke AWANE , Makoto MATSUHAMA , Kosuke TSUKATANI , Kodai NIINA , Takuya IDO
CPC分类号： H01S5/028 , G01N21/31 , G01N33/0027 , H01S5/022 , G01N2201/06113
摘要： To suppress individual differences in intensity of output laser light for each semiconductor laser device as much as possible while suppressing generation of stray light in a package of the semiconductor laser device, provided is a semiconductor laser device used for optical analysis, including: a package that accommodates a semiconductor laser element therein; and a light reflection reducing member that is provided inside the package and suppresses reflection of light emitted from the semiconductor laser element, in which the light reflection reducing member is bonded to an inner surface of the package.
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