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公开(公告)号：US12057676B2
公开(公告)日：2024-08-06
申请号：US17294816
申请日：2019-11-11
发明人： Thomas Schwarz , Andreas Plößl , Jörg Erich Sorg , Frank Singer
IPC分类号： H01S5/02255 , H01S5/02 , H01S5/02208 , H01S5/02234 , H01S5/028 , H01S5/40
CPC分类号： H01S5/02208 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/02234 , H01S5/02255 , H01S5/028 , H01S5/4031
摘要： In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.
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公开(公告)号：US11513275B2
公开(公告)日：2022-11-29
申请号：US17474975
申请日：2021-09-14
发明人： Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Thomas Schwarz , Tilman Ruegheimer , Frank Singer
IPC分类号： F21V8/00 , G02B27/01 , H01L25/075
摘要： The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20220223570A1
公开(公告)日：2022-07-14
申请号：US17614249
申请日：2020-05-27
IPC分类号： H01L25/075 , H01L33/62 , H01L33/46 , H01L33/00 , H01L27/14
摘要： In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a connection layer.
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公开(公告)号：US11069663B2
公开(公告)日：2021-07-20
申请号：US16468085
申请日：2018-01-12
发明人： Andreas Plößl , Siegfried Herrmann , Martin Rudolf Behringer , Frank Singer , Thomas Schwarz , Alexander F. Pfeuffer
IPC分类号： H01L25/075 , H01L33/62 , H01L33/00
摘要： A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.
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公开(公告)号：US10991845B2
公开(公告)日：2021-04-27
申请号：US15940929
申请日：2018-03-29
IPC分类号： H01L33/00 , H01L33/48 , H01L25/075
摘要： A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.
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6.发明申请公开(公告)号：US20190333898A1
公开(公告)日：2019-10-31
申请号：US16468085
申请日：2018-01-12
发明人： Andreas Plößl , Siegfried Herrmann , Martin Rudolf Behringer , Frank Singer , Thomas Schwarz , Alexander F. Pfeuffer
IPC分类号： H01L25/075 , H01L33/00 , H01L33/62
摘要： A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.
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公开(公告)号：US10276752B2
公开(公告)日：2019-04-30
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jürgen Moosburger , Lutz Höppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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公开(公告)号：US10217731B2
公开(公告)日：2019-02-26
申请号：US15529112
申请日：2015-11-30
发明人： Frank Singer , Thomas Schwarz , Stefan Grötsch
摘要： A method produces a plurality of optoelectronic modules, and includes: A) providing a metallic carrier assembly with a plurality of carrier units; B) applying a logic chip, each having at least one integrated circuit, to the carrier units; C) applying emitter regions that generate radiation, which can be individually electrically controlled; D) covering the emitter regions and the logic chips with a protective material; E) overmolding the emitter regions and the logic chips so that a cast body is formed, which joins the carrier units, the logic chips and the emitter regions to one another; F) removing the protective material and applying electrical conductor paths to the upper sides of the logic chips and to a cast body upper side; and G) dividing the carrier assembly into the modules.
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公开(公告)号：US20190051788A1
公开(公告)日：2019-02-14
申请号：US16079020
申请日：2017-05-29
发明人： Frank Singer , Alexander Linkov , Stefan Illek , Rainer Butendeich , Christoph Koller , Thomas Schwarz
IPC分类号： H01L31/167 , H01L25/13 , H01L31/0232 , H01L31/02 , H01L25/16
摘要： A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.
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10.发明申请公开(公告)号：US20190006562A1
公开(公告)日：2019-01-03
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jurgen Moosburger , Lutz Hoppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
IPC分类号： H01L33/42
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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