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公开(公告)号：US20160027980A1
公开(公告)日：2016-01-28
申请号：US14773864
申请日：2014-03-24
发明人： Berthold Hahn , Johannes Baur
IPC分类号： H01L33/62 , H01L33/38 , H01L31/0224 , H01L31/02 , H01L25/075 , H01L25/04 , H01L33/48 , H01L31/0203
CPC分类号： H01L33/62 , H01L25/042 , H01L25/0753 , H01L31/02002 , H01L31/0203 , H01L31/0224 , H01L31/0516 , H01L33/38 , H01L33/382 , H01L33/486 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , Y02E10/50 , H01L2924/00014
摘要： An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.
摘要翻译： 光电子半导体芯片具有基板和设置在基板上并具有半导体层序列的半导体本体。 半导体层序列包括布置在第一半导体层和第二半导体层之间的有源区，并且被提供以产生或接收辐射。 第一半导体层与第一触点和第二触点导电连接。 第一接触形成在基板的前侧，面向半导体本体。 第二触点形成在基板的背面，背离半导体本体。 第一触点和第二触点彼此导电连接。
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公开(公告)号：US11094844B2
公开(公告)日：2021-08-17
申请号：US16482487
申请日：2018-02-22
摘要： An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.
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公开(公告)号：US09947847B2
公开(公告)日：2018-04-17
申请号：US14773864
申请日：2014-03-24
发明人： Berthold Hahn , Johannes Baur
IPC分类号： H01L33/62 , H01L25/075 , H01L31/05 , H01L25/04 , H01L31/02 , H01L31/0203 , H01L31/0224 , H01L33/48 , H01L33/38
CPC分类号： H01L33/62 , H01L25/042 , H01L25/0753 , H01L31/02002 , H01L31/0203 , H01L31/0224 , H01L31/0516 , H01L33/38 , H01L33/382 , H01L33/486 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , Y02E10/50 , H01L2924/00014
摘要： An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.
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公开(公告)号：US10439096B2
公开(公告)日：2019-10-08
申请号：US15524618
申请日：2015-11-03
发明人： Johannes Baur , Lutz Hoeppel
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44 , H01L31/02 , H01L31/0203 , H01L31/0232 , H01L31/18 , H01L33/52 , H01L33/62 , H01L33/42 , H01L33/46 , H01L33/48
摘要： Disclosed is an optoelectronic semiconductor chip (10) comprising: —a succession of semiconductor layers (1) that has a main plane of extension, an active layer (12) and a bottom surface (1c); —a substrate (41) that is arranged on the bottom surface (1c) of the succession of semiconductor layers (1) and has a base surface (41c) facing away from the bottom surface (1c); and —a succession of joining layers (3) which is arranged in at least some locations between the succession of semiconductor layers (1) and the substrate (41) in a vertical direction; wherein —the substrate (41) laterally protrudes from the succession of semiconductor layers (1) by a maximum of 10 μm.
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公开(公告)号：US10276752B2
公开(公告)日：2019-04-30
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jürgen Moosburger , Lutz Höppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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6.发明申请公开(公告)号：US20190006562A1
公开(公告)日：2019-01-03
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jurgen Moosburger , Lutz Hoppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
IPC分类号： H01L33/42
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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公开(公告)号：US20180351046A1
公开(公告)日：2018-12-06
申请号：US15778416
申请日：2016-11-16
发明人： Johannes Baur , Wolfgang Schmid
CPC分类号： H01L33/46 , H01L33/14 , H01L33/20 , H01L33/405 , H01L33/44
摘要： An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.
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公开(公告)号：US20180301598A1
公开(公告)日：2018-10-18
申请号：US15769996
申请日：2016-10-19
发明人： Johannes Baur
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2933/0025
摘要： A light-emitting diode chip includes a semiconductor layer sequence based on InGaAlAsP and generates visible light or near-infrared radiation, a current spreading layer located directly on the semiconductor layer sequence and based on AlGaAs, an encapsulation layer applied directly to at least one of the current spreading layer and the semiconductor layer sequence and has an average thickness of 10 nm to 200 nm and a defect density of at most 10/mm2, at least one cover layer applied directly to the encapsulation layer at least in places, at least one non-metallic reflection layer located in places on a side of the current spreading layer facing away from the semiconductor layer sequence and covered in places by the encapsulation layer, and at least one of a mirror layer and an adhesion-promoting layer arranged in places on a side of the reflection layer facing away from the current spreading layers.
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公开(公告)号：US20220254965A1
公开(公告)日：2022-08-11
申请号：US17616530
申请日：2020-05-25
发明人： Johannes Baur , Ulrich Steegmüller
摘要： The invention relates to a semiconductor component with a semiconductor chip and a radiation conversion element which is arranged on the semiconductor chip. The semiconductor chip has an active region which is designed to generate a primary radiation with a peak wavelength, the radiation conversion element has a quantum structure, the peak wavelength of the primary radiation lies in the infrared spectral range, and the quantum structure at least partly converts the primary radiation into a secondary radiation, wherein the emission wavelength of an emission maximum of the secondary radiation is greater than the peak wavelength. The invention additionally relates to a method for producing radiation conversion elements.
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公开(公告)号：US10355174B2
公开(公告)日：2019-07-16
申请号：US15738427
申请日：2016-07-12
发明人： Markus Maute , Lutz Höppel , Jürgen Moosburger , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov , Johannes Baur
IPC分类号： H01L33/20 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.
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