公开(公告)号：US20240364082A1

公开(公告)日：2024-10-31

申请号：US18292062

申请日：2022-07-21

申请人： ams-OSRAM International GmbH

发明人： Heng WANG ,  Stefan ILLEK

IPC分类号： H01S5/30 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01S5/343

CPC分类号： H01S5/3077 ,  H01L33/06 ,  H01L33/145 ,  H01L33/305 ,  H01S5/34326 ,  H01S5/3436

摘要： The invention relates to a radiation-emitting semiconductor body, having a first semiconductor region of a first doping type, which has a first material composition, a second semiconductor region of a second doping type, which has a second material composition, an active region, which is located between the first semiconductor region and the second semiconductor region, and a first intermediate region, which is located between the first semiconductor region and the active region, wherein the active region includes a plurality of quantum well layers and a plurality of barrier layers, which are arranged alternatingly one above the other, the barrier layers have a third material composition, the first intermediate region includes at least one first blocking layer and at least one first intermediate layer, and the first blocking layer has a fourth material composition and the first intermediate layer has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.

公开(公告)号：US20240348013A1

公开(公告)日：2024-10-17

申请号：US18294915

申请日：2022-02-18

申请人： SONY GROUP CORPORATION

发明人： Hideki WATANABE

IPC分类号： H01S5/183 ,  H01S5/30

CPC分类号： H01S5/18311 ,  H01S5/18369 ,  H01S5/3009

摘要： Provided is a surface emitting laser element capable of suppressing an increase in driving voltage for switching a surface emitting laser regardless of the size of a light emitting region.
The present technology provides a surface emitting laser element including: a first structure including a first multilayer film reflector; a second structure including a second multilayer film reflector; and a resonator disposed between the first and second structures, in which the resonator includes an active layer in which at least a light emitting region is disposed between the first and second multilayer film reflectors, and the second structure is provided with a field effect transistor that controls injection of a current into the light emitting region. According to the surface emitting laser element according to the present technology, it is possible to provide the surface emitting laser element capable of suppressing an increase in voltage driving voltage for switching the surface emitting laser regardless of the size of the light emitting region.

公开(公告)号：US12046875B2

公开(公告)日：2024-07-23

申请号：US17313389

申请日：2021-05-06

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Kazuue Fujita ,  Masahiro Hitaka ,  Atsushi Sugiyama ,  Kousuke Shibata

IPC分类号： H01S5/34 ,  H01S5/042 ,  H01S5/06 ,  H01S5/30 ,  H01S5/028 ,  H01S5/12 ,  H01S5/22

CPC分类号： H01S5/3401 ,  H01S5/0425 ,  H01S5/0604 ,  H01S5/3086 ,  H01S5/3402 ,  H01S5/0287 ,  H01S5/04257 ,  H01S5/12 ,  H01S5/22 ,  H01S2302/02

摘要： A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

公开(公告)号：US20240235160A9

公开(公告)日：2024-07-11

申请号：US18211710

申请日：2023-06-20

申请人： Mellanox Technologies, Ltd.

发明人： Yuri Berk ,  Vladimir lakovlev ,  Tamir Sharkaz ,  Elad Mentovich

IPC分类号： H01S5/183 ,  H01S5/227 ,  H01S5/30 ,  H01S5/34 ,  H01S5/42

CPC分类号： H01S5/18347 ,  H01S5/18311 ,  H01S5/18377 ,  H01S5/2275 ,  H01S5/3095 ,  H01S5/3401 ,  H01S5/423

摘要： A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.

公开(公告)号：US20240162684A1

公开(公告)日：2024-05-16

申请号：US18068248

申请日：2022-12-19

申请人： Lumentum Operations LLC

发明人： Matthew Glenn PETERS ,  Jun YANG ,  Guowei ZHAO

IPC分类号： H01S5/183 ,  H01S5/30

CPC分类号： H01S5/18311 ,  H01S5/3095

摘要： In some implementations, an optical emitter includes a set of light emitting junctions; and a set of tunnel junctions separating the set of light emitting junctions, wherein a first light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a first wavelength, and wherein a second light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a second wavelength that is different from the first wavelength.

公开(公告)号：US20240146031A1

公开(公告)日：2024-05-02

申请号：US18548161

申请日：2022-01-21

申请人： SONY GROUP CORPORATION

发明人： MICHINORI SHIOMI ,  MASAYUKI TANAKA ,  TOMOMASA WATANABE ,  MIKIHIRO YOKOZEKI

IPC分类号： H01S5/30 ,  H01S5/183

CPC分类号： H01S5/3095 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/3013

摘要： The present technology provides a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.
The surface emitting laser according to the present technology includes: first and second reflectors; and a resonator disposed between the first and second reflectors, the resonator including an active layer and a tunnel junction layer, in which, in the resonator, a peripheral portion has higher resistance than a central portion at least in an entire region in a thickness direction of the tunnel junction layer. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.

公开(公告)号：US11973315B2

公开(公告)日：2024-04-30

申请号：US17706651

申请日：2022-03-29

申请人： APPLE INC.

发明人： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC分类号： H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/42

CPC分类号： H01S5/18308 ,  H01S5/18358 ,  H01S5/18366 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/426

摘要： An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

公开(公告)号：US20240136800A1

公开(公告)日：2024-04-25

申请号：US18546593

申请日：2022-01-27

申请人： ams-OSRAM International GMBH

发明人： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC分类号： H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC分类号： H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

摘要： In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

公开(公告)号：US11961773B2

公开(公告)日：2024-04-16

申请号：US17261782

申请日：2019-07-17

申请人： Oxford Instruments Nanotechnology Tools Limited

发明人： Ligang Deng ,  Katie Hore

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/66 ,  H01S5/20 ,  H01L31/18 ,  H01L33/00 ,  H01S5/183 ,  H01S5/30

CPC分类号： H01L22/26 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/308 ,  H01S5/2086 ,  H01J2237/334 ,  H01L31/1828 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/0083 ,  H01S5/183 ,  H01S5/3013

摘要： A method of etching into a one or more epitaxial layers of respective semiconductor material(s) in a vertical cavity surface emitting laser (VCSEL) semiconductor structure, wherein the or each semiconductor material is a III-V semiconductor material, a III-N semiconductor material, or a II-VI semiconductor material is disclosed. The method comprises placing a substrate having the semiconductor structure thereon onto a support table in a plasma processing chamber, the semiconductor structure carrying a patterned mask on the surface of the semiconductor structure distal from the support table. The method also includes process steps of establishing a flow of an etch gas mixture through the plasma processing chamber and generating a plasma within the plasma processing chamber and simultaneously applying a radio frequency (RF) bias voltage to the support table; whereby the portion(s) of the semiconductor structure not covered by the patterned mask are exposed to the etch gas mixture plasma and are thereby etched to form at least one feature in the semiconductor structure; wherein more than 90% of the etch gas mixture consists of a mixture of silicon tetrachloride (SiCl4) and nitrogen (N2).

公开(公告)号：US11916162B2

公开(公告)日：2024-02-27

申请号：US17083286

申请日：2020-10-28

申请人： Wright State University

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul Berger

IPC分类号： H01S5/34 ,  B82Y20/00 ,  H01L33/00 ,  H01L33/06 ,  H01S5/30 ,  H01S5/343 ,  H01S5/347 ,  G01S7/481 ,  H01L27/15 ,  H01S5/065 ,  H04N5/33

CPC分类号： H01L33/0025 ,  B82Y20/00 ,  H01L33/0029 ,  H01L33/06 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/347 ,  G01S7/4815 ,  H01L27/15 ,  H01S5/0657 ,  H04N5/33

摘要： A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.