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公开(公告)号：US20180287345A1
公开(公告)日：2018-10-04
申请号：US15841345
申请日：2017-12-14
申请人： APPLE INC.
摘要： An optoelectronic device includes a semiconductor substrate with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack. A second set of epitaxial layers formed over the first set defines a quantum well structure, and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack. At least the third set of epitaxial layers is contained in a mesa having sides that are perpendicular to the epitaxial layers. A dielectric coating extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.
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公开(公告)号：US11381060B2
公开(公告)日：2022-07-05
申请号：US15841345
申请日：2017-12-14
申请人： APPLE INC.
摘要： An optoelectronic device includes a semiconductor substrate with a first set of epitaxial layers formed on an area of the substrate defining a lower distributed Bragg-reflector (DBR) stack. A second set of epitaxial layers formed over the first set defines a quantum well structure, and a third set of epitaxial layers, formed over the second set, defines an upper DBR stack. At least the third set of epitaxial layers is contained in a mesa having sides that are perpendicular to the epitaxial layers. A dielectric coating extends over the sides of at least a part of the mesa that contains the third set of epitaxial layers. Electrodes are coupled to the epitaxial layers so as to apply an excitation current to the quantum well structure.
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公开(公告)号：US11973315B2
公开(公告)日：2024-04-30
申请号：US17706651
申请日：2022-03-29
申请人： APPLE INC.
发明人： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
CPC分类号： H01S5/18308 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/3095 , H01S5/34313 , H01S5/426
摘要： An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.
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公开(公告)号：US20220224078A1
公开(公告)日：2022-07-14
申请号：US17706651
申请日：2022-03-29
申请人： APPLE INC.
发明人： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
摘要： An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.
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公开(公告)号：US11322910B2
公开(公告)日：2022-05-03
申请号：US16792317
申请日：2020-02-17
申请人： APPLE INC.
发明人： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
摘要： An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.
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公开(公告)号：US20200274328A1
公开(公告)日：2020-08-27
申请号：US16792317
申请日：2020-02-17
申请人： APPLE INC.
发明人： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
摘要： An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.
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