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公开(公告)号:US11916356B2
公开(公告)日:2024-02-27
申请号:US17662268
申请日:2022-05-06
Applicant: Lumentum Operations LLC
Inventor: Vincent V. Wong , Jay A. Skidmore , Matthew Glenn Peters
CPC classification number: H01S5/423 , H01S5/0421 , H01S5/04256 , H01S5/18361 , H01S5/0021 , H01S5/0042 , H01S5/0282 , H01S5/04254 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/187 , H01S5/2063 , H01S5/343 , H01S2301/176
Abstract: An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.
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公开(公告)号:US20230361533A1
公开(公告)日:2023-11-09
申请号:US18355103
申请日:2023-07-19
Applicant: II-VI DELAWARE, INC.
Inventor: Shiyun LIN , Daniel MAHGEREFTEH
CPC classification number: H01S5/187 , G02B6/124 , G02B6/12004 , G02B6/2935 , H01S5/1028 , H01S5/026 , H01S5/005 , G02B2006/12147 , G02B2006/12121
Abstract: In an example embodiment, a system includes a first grating-coupled laser (GCL) that includes a first laser cavity optically coupled to a first transmit grating coupler configured to redirect horizontally-propagating first light, received from the first laser cavity, vertically downward and out of the first GCL. The system also includes a second GCL that includes a second laser cavity optically coupled to a second transmit grating coupler configured to transmit second light vertically downward and out of the second GCL. The system also includes a photonic integrated circuit (PIC) that includes a first receive grating coupler optically coupled to a first waveguide and configured to receive the first light and couple the first light into the first waveguide. The PIC also includes a second receive grating coupler optically coupled to a second waveguide and configured to receive the second light and couple the second light into the second waveguide.
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公开(公告)号:US20230198218A1
公开(公告)日:2023-06-22
申请号:US18008289
申请日:2021-06-15
Inventor: Boon S. OOI , Omar ALKHAZRAGI , Tien Khee NG
CPC classification number: H01S5/02251 , H01S5/2214 , H01S5/2223 , H01S5/187 , H01S5/125 , H01S5/1221 , H01S5/02461
Abstract: An array of surface-emitting gain chips includes a common substrate, plural gain chips formed on the common substrate, each configured to generate a light beam, plural optical couplers, each located on a top surface of a corresponding gain chip of the plural gain chips, plural optical fibers, each connected with one end to a corresponding optical coupler of the plurality of optical couplers, an array wide optical coupler connected to another end of the plural optical fibers, and a single optical fiber connected to the array wide optical coupler and configured to output the combined light beams.
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公开(公告)号:US11658463B2
公开(公告)日:2023-05-23
申请号:US17067451
申请日:2020-10-09
Applicant: Sony Corporation
Inventor: Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC: H01S5/183 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , B82Y20/00 , H01S5/042 , H01S5/02251 , H01S5/02253 , H01S5/18 , H01S5/125
CPC classification number: H01S5/18308 , B82Y20/00 , H01S5/02251 , H01S5/02253 , H01S5/04252 , H01S5/125 , H01S5/18 , H01S5/187 , H01S5/18311 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/04254 , H01S5/18338 , H01S5/3432 , H01S2301/176 , H01S2301/18
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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公开(公告)号:US11283241B2
公开(公告)日:2022-03-22
申请号:US16464147
申请日:2017-12-07
Inventor: Alexandre Laurain , Jerome V. Moloney , Patrick Kokou Gbele
Abstract: A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.
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公开(公告)号:US11271370B2
公开(公告)日:2022-03-08
申请号:US16946777
申请日:2020-07-06
Applicant: Acorn Semi, LLC
Inventor: Paul A. Clifton , Andreas Goebel , R. Stockton Gaines
Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
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公开(公告)号:US11088511B2
公开(公告)日:2021-08-10
申请号:US16451580
申请日:2019-06-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Yoshitaka Kurosaka , Yuu Takiguchi , Takahiro Sugiyama , Kazuyoshi Hirose , Yoshiro Nomoto
Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0
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公开(公告)号:US11049900B2
公开(公告)日:2021-06-29
申请号:US16532189
申请日:2019-08-05
Applicant: Analog Devices, Inc.
Inventor: Mohamed Azize , Alain Valentin Guery , Mario Joseph Freni
Abstract: Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 μm. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications.
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公开(公告)号:US20210135427A1
公开(公告)日:2021-05-06
申请号:US16674404
申请日:2019-11-05
Applicant: II-VI Delaware, Inc.
Inventor: Lukas Mutter , Norbert Lichtenstein
Abstract: A fabrication sequence for an oxide-confined VCSEL includes the deposition of a protective coating over exposed horizontal surfaces to prevent unwanted oxide layers from being formed during the lateral oxidation process used to create the oxide aperture. By preventing the oxidation of these surfaces in the first instance, the opportunity for moisture to gain access to the active region of the VCSEL is eliminated. For example, exposed Al-containing surfaces are covered with a protective coating of dielectric material prior to initiating the conventional lateral oxidation process used to form the oxide aperture of the VCSEL. With the protective coating in place, a conventional fabrication process is resumed, and the protective coating ultimately forms part of the passivation layer used to provide electrical isolation for the final VCSEL device.
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公开(公告)号:US10826267B2
公开(公告)日:2020-11-03
申请号:US16365624
申请日:2019-03-26
Applicant: FINISAR CORPORATION
Inventor: Daniel Mahgerefteh , Jianxiao Chen , Bernd Huebner , Xiaojie Xu , Yasuhiro Matsui , David Adams , The′ Linh Nguyen
IPC: G02B6/12 , H01S5/10 , H01S5/026 , H01S5/187 , G02B6/124 , H01S5/00 , H01S5/22 , H01S5/30 , G02B6/122 , G02B6/30 , G02B6/27 , H01S5/022 , H01S5/12 , H01S5/125 , H01S5/20
Abstract: A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.
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