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    Surface light emitting semiconductor laser element
    2.
    发明授权
    Surface light emitting semiconductor laser element 有权

    公开(公告)号：US10578819B2

    公开(公告)日：2020-03-03

    申请号：US16012400

    申请日：2018-06-19

    申请人： Sony Corporation

    发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    IPC分类号： H01S5/183 ,  G02B6/42 ,  H01S5/022 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

    摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

    Surface light emitting semiconductor laser element
    4.
    发明授权
    Surface light emitting semiconductor laser element 有权

    公开(公告)号：US10025051B2

    公开(公告)日：2018-07-17

    申请号：US15803382

    申请日：2017-11-03

    申请人： Sony Corporation

    发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

    IPC分类号： G02B6/42 ,  H01S5/183 ,  H01S5/323 ,  H01S5/042 ,  H01S5/22 ,  H01S5/022

    摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190074662A1

    公开(公告)日：2019-03-07

    申请号：US16173226

    申请日：2018-10-29

    申请人： Sony Corporation

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/183 ,  H01S5/223 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/022 ,  H01S5/187 ,  H01S5/343 ,  H01S5/18 ,  H01S5/125 ,  H01S5/042

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    Light-emitting element and method for manufacturing the same
    6.
    发明授权
    Light-emitting element and method for manufacturing the same 有权

    公开(公告)号：US10153613B2

    公开(公告)日：2018-12-11

    申请号：US15810690

    申请日：2017-11-13

    申请人： Sony Corporation

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/223 ,  H01S5/187 ,  H01S5/022 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/18 ,  H01S5/125

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    Light-emitting element
    8.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US09252565B2

    公开(公告)日：2016-02-02

    申请号：US14518382

    申请日：2014-10-20

    申请人： Sony Corporation

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/00 ,  H01S5/125 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/18 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    摘要翻译： 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。