公开(公告)号：US20170317473A1

公开(公告)日：2017-11-02

申请号：US15140588

申请日：2016-04-28

申请人： HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

发明人： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil ,  Marco Fiorentino

IPC分类号： H01S5/343 ,  H01S5/32 ,  H01S3/23 ,  H01S5/347 ,  H01S3/063

CPC分类号： H01S5/343 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/0261 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/3211 ,  H01S5/3412 ,  H01S5/347

摘要： An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

公开(公告)号：US08859412B2

公开(公告)日：2014-10-14

申请号：US14007168

申请日：2012-02-09

申请人： Ajaykumar R. Jain

发明人： Ajaykumar R. Jain

IPC分类号： H01L21/28 ,  H01L33/00 ,  H01S5/02 ,  H01S5/347 ,  H01L21/02 ,  H01L33/26 ,  H01S5/183 ,  H01S5/327 ,  H01S5/042

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/024 ,  H01L21/02417 ,  H01L21/02521 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/02568 ,  H01L31/02325 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035236 ,  H01L31/036 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/18 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32 ,  H01L33/46 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/327

摘要： Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s).

摘要翻译： 通过在单晶层状/层状衬底上沉积（生长）一个或多个外延半导体层而制成的光电器件，例如发光二极管，激光二极管，图像传感器，光学检测器等，使得每个层具有纤锌矿晶体结构 。 在一些实施例中，沉积这些层，然后将起始衬底的一个或多个层从衬底的其余部分移除。 在这种实施例的一个子集中，所移除的薄片被部分地或完全地去除。 在其它实施方案中，在沉积一种或多种含纤锌矿结晶结构的层之前，除去起始衬底的一个或多个薄片。

公开(公告)号：US07822095B2

公开(公告)日：2010-10-26

申请号：US12017587

申请日：2008-01-22

申请人： Michael D. Tiberi ,  Vladimir I. Kozlovsky

发明人： Michael D. Tiberi ,  Vladimir I. Kozlovsky

IPC分类号： H01S3/08

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01S5/04 ,  H01S5/041 ,  H01S5/187 ,  H01S5/347

摘要： A laser having a laser cavity is disclosed that does not require conventional dielectric mirrors or as-grown reflectors. Instead, a diffraction grating and total internal reflection system is used to define a laser cavity. Within the laser cavity, the laser emission travels in a zigzag pattern. The diffraction grating provides a highly reflective “mirror” diffracting beams at a forward angle and back angle that “tunes” the process of total internal reflection. The diffraction grating also directs a small percentage of the incident radiation approximately normal to the upper face of the semiconductor (more generally, at an angle less than the critical angle), to provide an output laser beam. The laser can be used in an electron tube and laser display system.

摘要翻译： 公开了一种具有激光腔的激光器，其不需要常规电介质反射镜或生长反射器。 相反，使用衍射光栅和全内反射系统来定义激光腔。 在激光腔内，激光发射以锯齿形图案行进。 衍射光栅提供了高度反射的“镜面”衍射光束，以前角和后角“调整”全内反射的过程。 衍射光栅还引导入射辐射的一小部分大致垂直于半导体的上表面（更一般地，以小于临界角的角度），以提供输出激光束。 激光可用于电子管和激光显示系统。

公开(公告)号：US07691353B2

公开(公告)日：2010-04-06

申请号：US11156264

申请日：2005-06-17

申请人： Robert H. Burgener, II ,  Roger L. Felix ,  Gary M. Renlund

发明人： Robert H. Burgener, II ,  Roger L. Felix ,  Gary M. Renlund

IPC分类号： H01L21/00

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450° C.; for antimony, the temperature is at least about 650° C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.

摘要翻译： 公开了诸如氧化锌的低介电常数组II-VI化合物和制造方法。 低介电常数绝缘体材料通过用至少一摩尔％p型掺杂剂离子掺杂氧化锌来制造。 通过用浓度至少为1017原子/ cm3的硅掺杂氧化锌来制造低介电常数氧化锌绝缘体材料。 低介电氧化锌绝缘体材料通过掺杂浓度为至少约1018原子/ cm3的掺杂剂离子掺杂氧化锌，然后加热至将氧化锌转化为绝缘体的温度来制造。 温度根据掺杂剂的选择而变化。 对于砷，温度至少为450°C。 对于锑，温度至少为约650℃。氧化锌半导体的介电常数通过以至少约1018至约1019原子/ cm3的浓度掺杂掺杂剂离子来降低。

公开(公告)号：US20100032008A1

公开(公告)日：2010-02-11

申请号：US12478626

申请日：2009-06-04

申请人： Bunmi T. ADEKORE

发明人： Bunmi T. ADEKORE

IPC分类号： H01L31/00 ,  H01B1/02 ,  B32B17/06 ,  B32B9/04 ,  C30B25/02 ,  H01L31/02 ,  H01L29/861 ,  H01L29/26 ,  H01S5/00

CPC分类号： G02B6/12004 ,  B82Y20/00 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0296 ,  H01L31/0687 ,  H01L31/07 ,  H01L31/0725 ,  H01L31/073 ,  H01L33/04 ,  H01L33/06 ,  H01L33/28 ,  H01L33/285 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3095 ,  H01S5/347 ,  H01S5/4093 ,  H01S5/423 ,  Y02E10/543 ,  Y02E10/544

摘要： Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of ZnxA1-xOyB1-y, wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. ZnxA1-xOyB1-y based tunnel diodes may be formed and employed in ZnxA1-xOyB1-y based multi-junction photovoltaic devices. ZnxA1-xOyB1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.

摘要翻译： 公开了基于ZnO的单结和多结光伏电池的制造方法和装置。 ZnO基单结和多结光伏电池以及其他光电子器件包括ZnxAl-xOyB1-y的p型，n型和未掺杂材料，其中分别由x和y表示的合金组成A和B在0 合金元素A选自包括Mg，Be，Ca，Sr，Cd和In的相关元素，合金元素B选自包括Te和Se的相关元素。 选择A，B，x和y可以调整材料的带隙。 材料的带隙可以选择在约1.4eV和约6.0eV之间的范围内。 可以形成ZnxAl-xOyB1-y基隧道二极管，并用于基于ZnxA1-xOyB1-y的多结光伏器件。 基于ZnxAl-xOyB1-y的单结和多结光伏器件还可以包括透明导电异质结构和对ZnO基衬底的高掺杂接触。

公开(公告)号：US20090294758A1

公开(公告)日：2009-12-03

申请号：US12540772

申请日：2009-08-13

申请人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L21/36

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L33/285

摘要： A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

摘要翻译： 掺有Se的含ZnO半导体层在视觉上具有发光峰值波长，并且具有与ZnO的带隙相当的带隙。

公开(公告)号：US20080224121A1

公开(公告)日：2008-09-18

申请号：US12029934

申请日：2008-02-12

申请人： Ranojoy BOSE ,  Chee Wei WONG ,  Jie GAO

发明人： Ranojoy BOSE ,  Chee Wei WONG ,  Jie GAO

IPC分类号： H01L33/00

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/3412

摘要： Systems and methods for devices that include a structure having at least one resonant cavity and at least one emitter having an emission frequency that is substantially in the telecommunication wavelengths are provided. The emission frequency can be coupled to the resonant frequency of resonant cavity so that emitted wavelengths corresponding to the resonant wavelengths of the resonant cavity are enhanced. Moreover, the devices of the present invention may be capable of operating at room temperatures.

摘要翻译： 提供了包括具有至少一个谐振腔的结构和具有基本上在通信波长中的发射频率的至少一个发射器的装置的系统和方法。 发射频率可以耦合到谐振腔的谐振频率，使得对应于谐振腔的谐振波长的发射波长增强。 此外，本发明的装置可以在室温下运行。

公开(公告)号：US07259404B2

公开(公告)日：2007-08-21

申请号：US10299747

申请日：2002-11-19

申请人： Osram Opto Semiconductors GmbH, legal representative

发明人： Wolfgang Faschinger, deceased

IPC分类号： H01L29/24 ,  H01L33/00

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/0218 ,  H01S5/327 ,  H01S5/347

摘要： A light-emitting semiconductor component has a number of layers that predominantly contain elements of groups II and VI of the Periodic Table. The layers are applied epitaxially on a substrate, preferably made of InP, and include a p-doped covering layer and an n-doped covering layer having lattice constants of which correspond to that of the substrate. An undoped active layer lies between the two covering layers. The active layer forms a quantum well structure in interaction with its neighboring layers, a lattice constant of the active layer being made smaller than that of the neighboring layers.

摘要翻译： 发光半导体组件具有主要包含元素周期表II和VI族元素的层数。 这些层外延地施加在衬底上，优选由InP制成，并且包括具有对应于衬底的晶格常数的p掺杂覆盖层和n掺杂覆盖层。 未掺杂的活性层位于两个覆盖层之间。 有源层与其相邻层相互作用形成量子阱结构，有源层的晶格常数小于相邻层的晶格常数。

公开(公告)号：US20050285138A1

公开(公告)日：2005-12-29

申请号：US11165848

申请日：2005-06-17

申请人： Robert Burgener ,  Roger Felix ,  Gary Renlund

发明人： Robert Burgener ,  Roger Felix ,  Gary Renlund

IPC分类号： C01G9/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347

CPC分类号： H01L21/02551 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/28 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

摘要： A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

摘要翻译： 公开了一种持续性的p型II-VI族半导体材料，其包含II族元素的原子，VI族元素的原子和替代半导体材料中的VI族元素的原子的p型掺杂剂。 p型掺杂剂具有负氧化态。 p型掺杂剂导致在半导体材料中形成II族元素的原子空位。 公开了含有II-VI族半导体材料的制造方法和固态器件。

公开(公告)号：US06956322B2

公开(公告)日：2005-10-18

申请号：US10725918

申请日：2003-12-01

申请人： Masao Ikeda

发明人： Masao Ikeda

IPC分类号： G02B6/42 ,  H01L25/075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/32 ,  H01S5/02 ,  H01S5/022 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01J1/62

CPC分类号： B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01L25/0753 ,  H01L25/0756 ,  H01L2924/0002 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4043 ,  H01S5/4087 ,  H04N9/315 ,  H01L2924/00

摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

摘要翻译： 可容易地制造并能够精确地控制发光位置的发光器件和光学器件。 第一和第二发光元件形成在支撑基座的一个面上。 第一发光元件在其上设置有支撑基底的一侧的GaN制的第一基板上具有由GaInN混晶构成的有源层。 第二发光元件在其上设置有支撑基底的一侧的GaAs制造的第二基板上具有激光部分。 由于第一发光元件和第二发光元件不在同一衬底上生长，所以可以容易地获得具有约400nm的输出波长的多波长激光器。 由于第一基板在可见光区域是透明的，因此通过光刻可以精确地控制第一和第二发光元件中的发光区域的位置。