公开(公告)号：US20240154049A1

公开(公告)日：2024-05-09

申请号：US18411782

申请日：2024-01-12

申请人： First Solar, Inc.

发明人： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC分类号： H01L31/0272 ,  C23C14/06 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/0272 ,  C23C14/0629 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/0248 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02562 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/50

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10062800B2

公开(公告)日：2018-08-28

申请号：US13912782

申请日：2013-06-07

申请人： First Solar, Inc.

发明人： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi ,  Adam Fraser Halverson

IPC分类号： H01L31/0272 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC分类号： H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

公开(公告)号：US09879143B2

公开(公告)日：2018-01-30

申请号：US14706315

申请日：2015-05-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungsang Cho

IPC分类号： H01B1/06 ,  B05D5/12 ,  C09D5/24 ,  H01L21/02 ,  H01L21/477 ,  H01L31/18 ,  H01L33/00

CPC分类号： C09D5/24 ,  B05D5/12 ,  H01B1/06 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/477 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1864 ,  H01L33/005 ,  H01L33/0083 ,  H01L33/0095 ,  Y02E10/543

摘要： A chalcogen element can be effectively dissolved in a non-explosive hydrazine-based solvent by the aid of sodium in a non-explosive hydrazine-based solvent. Therefore, a precursor solution for forming a metal chalcogenide film containing as a solvent a non-explosive hydrazine-based solvent which is less poisonous than hydrazine and which is free of explosiveness is provided. A metal chacogenide thin film may be formed employing the metal chalcogenide precursor solution.

公开(公告)号：US09871154B2

公开(公告)日：2018-01-16

申请号：US13923644

申请日：2013-06-21

申请人： First Solar, Inc.

发明人： Anil Raj Duggal ,  Joseph John Shiang ,  William Hullinger Huber ,  Adam Fraser Halverson

IPC分类号： H01L31/0272 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

公开(公告)号：US09825197B2

公开(公告)日：2017-11-21

申请号：US13781920

申请日：2013-03-01

申请人： TSMC Solar Ltd.

发明人： Shih-Wei Chen

IPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/0749 ,  H01L21/02

CPC分类号： H01L31/1828 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/02966 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

摘要： A method of fabricating a buffer layer of a photovoltaic device comprises: providing a substrate having a back contact layer disposed above the substrate and an absorber layer disposed above the back contact layer; depositing a metal layer on the absorber layer; and performing a thermal treatment on the deposited metal layer in an atmosphere comprising sulfur, selenium or oxygen, to form a buffer layer.

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

申请人： FIRST SOLAR, INC

发明人： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC分类号： H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC分类号： H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US20170236956A1

公开(公告)日：2017-08-17

申请号：US15586505

申请日：2017-05-04

申请人： First Solar, Inc.

发明人： Yong Liang ,  Jinbo Cao ,  William Hullinger Huber

IPC分类号： H01L31/032 ,  H01L31/073 ,  H01L31/0224

CPC分类号： H01L31/0321 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented

公开(公告)号：US09698285B2

公开(公告)日：2017-07-04

申请号：US14171020

申请日：2014-02-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09557273B2

公开(公告)日：2017-01-31

申请号：US14143723

申请日：2013-12-30

申请人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Sungho Jeong ,  Jeong Hwan In ,  Chan Kyu Kim ,  Seokhee Lee ,  Hakjae Lee

IPC分类号： G01C19/00 ,  G01D18/00 ,  G01F25/00 ,  G06F19/00 ,  G01N21/71

CPC分类号： G01N21/718 ,  Y02E10/541 ,  Y02E10/543

摘要： Disclosed herein is a quantitative analyzing method of a copper indium gallium selenide (CIGS) film, the method including: obtaining spectra by irradiating a laser on the plurality of CIGS films having different component compositions, selecting a first spectral line and a second spectral line among the spectra of target elements to be analyzed and obtaining a correlation plot between a measured intensity of the first spectral line and a measured intensity of the second spectral line, correcting the measured intensity of the first spectral line and the measured intensity of the second spectral line using results obtained by curve fitting the correlation plot, obtaining a linear calibration curve using the corrected intensity of the first spectral line and the corrected intensity of the second spectral line; and comparing the linear calibration curve with LIBS analysis of a target sample to be analyzed.

摘要翻译： 本文公开了一种铜铟镓硒（CIGS）膜的定量分析方法，该方法包括：通过在具有不同组成成分的多个CIGS膜上照射激光来获得光谱，选择第一光谱线和第二光谱线 要分析的目标元素的光谱，并且获得第一光谱线的测量强度和第二光谱线的测量强度之间的相关图，校正第一光谱线的测量强度和第二光谱线的测量强度 使用通过曲线拟合相关图获得的结果，使用第一光谱线的校正强度和第二光谱线的校正强度获得线性校准曲线; 并将线性校准曲线与要分析的目标样品的LIBS分析进行比较。