公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

摘要翻译： 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20160126396A1

公开(公告)日：2016-05-05

申请号：US14602340

申请日：2015-01-22

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC分类号： H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10243092B2

公开(公告)日：2019-03-26

申请号：US15612078

申请日：2017-06-02

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09698285B2

公开(公告)日：2017-07-04

申请号：US14171020

申请日：2014-02-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US11769844B2

公开(公告)日：2023-09-26

申请号：US17505291

申请日：2021-10-19

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US10529883B2

公开(公告)日：2020-01-07

申请号：US14531425

申请日：2014-11-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20140261687A1

公开(公告)日：2014-09-18

申请号：US14209589

申请日：2014-03-13

申请人： FIRST SOLAR, INC.

发明人： Dan Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/0296 ,  H01L31/18

CPC分类号： H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

摘要： A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

摘要翻译： 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。