公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

摘要翻译： 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US10529883B2

公开(公告)日：2020-01-07

申请号：US14531425

申请日：2014-11-03

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US08785232B2

公开(公告)日：2014-07-22

申请号：US13945583

申请日：2013-07-18

申请人： First Solar, Inc.

发明人： Gang Xiong ,  Rick C. Powell ,  Aaron Roggelin ,  Kuntal Kumar ,  Arnold Allenic ,  Kenneth M. Ring ,  Charles E. Wickersham

IPC分类号： H01L21/00

CPC分类号： H01L31/02963 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

摘要翻译： 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。

公开(公告)号：US20130180579A1

公开(公告)日：2013-07-18

申请号：US13743440

申请日：2013-01-17

申请人： FIRST SOLAR, INC

发明人： Changming Jin ,  Xilin Peng ,  Rick C. Powell ,  Aaron Roggelin ,  Gang Xiong

IPC分类号： H01L31/075 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543

摘要： A photovoltaic device having an absorber multilayer and methods of manufacturing the same are described. The absorber multilayer, which is formed adjacent to a window layer, may include a doped first cadmium telluride layer which contains a first dopant and an intrinsic second cadmium telluride layer. The absorber multilayer may further include at least a third cadmium telluride layer formed adjacent to a back contact. The at least third cadmium telluride layer may include doped or intrinsic cadmium telluride.

摘要翻译： 描述了具有吸收体多层的光电器件及其制造方法。 与窗口层相邻形成的吸收体多层可以包括掺杂的第一碲化镉层，其含有第一掺杂剂和本征的第二碲化镉层。 吸收体多层可以进一步包括至少一个邻近背面接触形成的第三碲化镉层。 至少第三碲化镉层可以包括掺杂或固有的碲化镉。

公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20130298992A1

公开(公告)日：2013-11-14

申请号：US13945583

申请日：2013-07-18

申请人： First Solar, Inc.

发明人： Gang Xiong ,  Rick C. Powell ,  Aaron Roggelin ,  Kuntal Kumar ,  Arnold Allenic ,  Kenneth M. Ring ,  Charles E. Wickersham

IPC分类号： H01L31/0296

CPC分类号： H01L31/02963 ,  H01L31/073 ,  Y02E10/543 ,  Y02P70/521

摘要： A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

摘要翻译： 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。

公开(公告)号：US20210301387A1

公开(公告)日：2021-09-30

申请号：US17267189

申请日：2019-08-09

申请人： First Solar, Inc.

发明人： John Barden ,  Rick Powell ,  Aaron Roggelin ,  Nirav Vora

IPC分类号： C23C14/22 ,  C23C14/26 ,  C23C14/56 ,  C23C16/448

摘要： Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

申请人： First Solar, Inc.

发明人： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC分类号： H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.