公开(公告)号：US20230352302A1

公开(公告)日：2023-11-02

申请号：US18046953

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： H01L21/02

CPC分类号： H01L21/02658 ,  H01L21/02538 ,  H01L21/024 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02387

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US20230148397A1

公开(公告)日：2023-05-11

申请号：US18046950

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： H01L21/02

CPC分类号： H01L21/02658 ,  H01L21/024 ,  H01L21/02387 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02568

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US20180087154A1

公开(公告)日：2018-03-29

申请号：US15820188

申请日：2017-11-21

申请人： ASM IP HOLDING B.V.

发明人： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC分类号： C23C16/455 ,  H01L45/00 ,  C23C16/18 ,  H01L21/02 ,  C23C16/30 ,  C23C16/44

CPC分类号： C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

摘要： Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US09825197B2

公开(公告)日：2017-11-21

申请号：US13781920

申请日：2013-03-01

申请人： TSMC Solar Ltd.

发明人： Shih-Wei Chen

IPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/0749 ,  H01L21/02

CPC分类号： H01L31/1828 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/02966 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543

摘要： A method of fabricating a buffer layer of a photovoltaic device comprises: providing a substrate having a back contact layer disposed above the substrate and an absorber layer disposed above the back contact layer; depositing a metal layer on the absorber layer; and performing a thermal treatment on the deposited metal layer in an atmosphere comprising sulfur, selenium or oxygen, to form a buffer layer.

公开(公告)号：US20170317171A1

公开(公告)日：2017-11-02

申请号：US15650328

申请日：2017-07-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/08 ,  H01L29/66 ,  H01L29/267 ,  H01L29/26 ,  H01L21/02 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L29/0847 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/425 ,  H01L21/445 ,  H01L21/76895 ,  H01L21/84 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/0638 ,  H01L29/263 ,  H01L29/267 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.

公开(公告)号：US20170250074A1

公开(公告)日：2017-08-31

申请号：US15595602

申请日：2017-05-15

申请人： International Business Machines Corporation

发明人： Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Alexander Reznicek

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/308 ,  H01L29/165 ,  H01L21/762 ,  H01L29/04 ,  H01L29/267 ,  H01L29/06

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/762 ,  H01L21/8258 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/165 ,  H01L29/267

摘要： A semiconductor structure is provided by a process in which two aspect ratio trapping processes are employed. The structure includes a semiconductor substrate portion of a first semiconductor material having a first lattice constant. A plurality of first semiconductor-containing pillar structures of a second semiconductor material having a second lattice constant that is greater than the first lattice constant extend upwards from a surface of the semiconductor substrate portion. A plurality of second semiconductor-containing pillar structures of a third semiconductor material having a third lattice constant that is greater than the first lattice constant extend upwards from another surface of the semiconductor substrate portion. A spacer separates each first semiconductor-containing pillar structure from each second semiconductor-containing pillar structure. Each second semiconductor-containing pillar structure has a width that is different from a width of each first semiconductor-containing pillar structure.

公开(公告)号：US09673348B2

公开(公告)日：2017-06-06

申请号：US15193921

申请日：2016-06-27

申请人： Global Solar Energy, Inc.

发明人： Jeffrey S. Britt ,  Scot Albright ,  Urs Schoop

IPC分类号： H01L31/18 ,  C23C18/12 ,  H01L21/02 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0749

CPC分类号： H01L31/1876 ,  C23C18/1204 ,  C23C18/1283 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541

摘要： Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

公开(公告)号：US09640536B2

公开(公告)日：2017-05-02

申请号：US14750433

申请日：2015-06-25

申请人： International Business Machines Corporation

发明人： Effendi Leobandung

IPC分类号： H01L21/8234 ,  H01L27/092 ,  H01L27/12 ,  H01L21/84 ,  H01L21/8238 ,  H01L21/306 ,  H01L21/308 ,  H01L29/51 ,  H01L29/49 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L27/108 ,  H01L29/78 ,  H01L29/417

CPC分类号： H01L27/0924 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/10826 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/16 ,  H01L29/20 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device and a method for fabricating the device are provided. The semiconductor device has a substrate having a first device region and a second device region. A p-type fin field effect transistor is formed in the first device region. The p-type fin field effect transistor has a first fin structure comprised of a first semiconductor material. An n-type fin field effect transistor is formed in the second device region. The n-type fin field effect transistor has a second fin structure comprised of a second semiconductor material that is different than the first semiconductor material. To fabricate the semiconductor device, a substrate having an active layer present on a dielectric layer is provided. The active layer is etched to provide a first region having the first fin structure and a second region having a mandrel structure. The second fin structure is formed on a sidewall of the mandrel structure.

公开(公告)号：US20170092736A1

公开(公告)日：2017-03-30

申请号：US15220723

申请日：2016-07-27

申请人： International Business Machines Corporation

发明人： Karthik Balakrishnan ,  Kangguo Cheng ,  Pouya Hashemi ,  Alexander Reznicek

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L21/311 ,  H01L29/78 ,  H01L21/02 ,  H01L29/423

CPC分类号： H01L29/6681 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/7853 ,  H01L29/78696

摘要： A method for manufacturing a semiconductor device comprises depositing alternating layers of a plurality of first dielectric layers and a plurality of second dielectric layers on a substrate in a stacked configuration, forming one or more first openings in the stacked configuration to a depth penetrating below an upper surface of a bottom second dielectric layer of the plurality of second dielectric layers, forming one or more second openings in the stacked configuration to a depth corresponding to an upper surface of the substrate or below an upper surface of the substrate, removing the plurality of second dielectric layers from the stacked configuration to form a plurality of gaps, and epitaxially growing a semiconductor material from a seed layer in the one or more second openings to fill the one or more first and second openings and the plurality of gaps, wherein defects caused by a lattice mismatch between the epitaxially grown semiconductor material and a material of the substrate are contained at a bottom portion of the one or more second openings.

公开(公告)号：US20160359060A1

公开(公告)日：2016-12-08

申请号：US15114897

申请日：2015-01-14

申请人： MERCK PATENT GMBH

发明人： Ranjan Deepak DESHMUKH ,  Rebekah HOOKER ,  Pawel MISKIEWICZ ,  Joerg SCHNEIDER ,  Mathias NOWOTNY

IPC分类号： H01L31/032 ,  H01L31/0296 ,  C09D5/24 ,  C09D11/52 ,  C01G49/06 ,  C01G3/02 ,  C01F7/30 ,  C01G15/00 ,  C01G9/02 ,  C01G19/02 ,  C01G19/00 ,  C07F15/02 ,  C07F1/08 ,  C07F5/06 ,  C07F5/00 ,  C07F3/06 ,  C07F7/22 ,  H01L31/18

CPC分类号： H01L31/0322 ,  C01F7/30 ,  C01G3/02 ,  C01G9/02 ,  C01G15/00 ,  C01G19/006 ,  C01G19/02 ,  C01G49/06 ,  C01P2006/40 ,  C07F1/08 ,  C07F3/06 ,  C07F5/003 ,  C07F5/069 ,  C07F7/2224 ,  C07F15/025 ,  C09D5/24 ,  C09D11/52 ,  H01L21/02551 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/1864

摘要： This invention relates to a precursor material, which can be decomposed to form semiconductors and metal oxides, or more generally, materials for electronic components. The precursors comprise metal complexes of hydroxamato ligands. The invention further relates to a preparation process for thin inorganic films comprising various metals (e.g. Cu/In/Zn/Ga/Sn) and oxygen, selenium and/or sulfur. The thin films can be used in photovoltaic panels (solar cells), other semiconductor or electronic devices, and other applications using such films. The process uses molecular, metal containing precursor complexes with hydroxamato ligands. These can be combined in the process with chalcogenide sources or oxygen. Exemplarily, various metal oxides and copper-based chalcopyrites of the I-III-VI2 type are prepared with high purity at low temperatures.

摘要翻译： 本发明涉及可分解形成半导体和金属氧化物的前体材料，或更一般地，涉及电子部件的材料。 前体包含异羟肟酸配体的金属络合物。 本发明还涉及包含各种金属（例如Cu / In / Zn / Ga / Sn）和氧，硒和/或硫的薄无机膜的制备方法。 薄膜可用于光伏面板（太阳能电池），其他半导体或电子设备以及使用这种薄膜的其它应用。 该方法使用分子，含金属的前体复合物与羟基配体配体。 这些可以在该过程中与硫族化物源或氧气结合。 示例性地，在低温下制备具有高纯度的I-III-VI2型的各种金属氧化物和铜基黄铜矿。