公开(公告)号：US12125722B2

公开(公告)日：2024-10-22

申请号：US17351592

申请日：2021-06-18

申请人： ASM IP HOLDING B.V.

发明人： Yukihiro Mori

IPC分类号： H01L21/67 ,  H01L21/66 ,  G02F1/13

CPC分类号： H01L21/6719 ,  H01L21/67167 ,  H01L22/20 ,  G02F1/1303

摘要： A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

公开(公告)号：US12119228B2

公开(公告)日：2024-10-15

申请号：US17845325

申请日：2022-06-21

申请人： ASM IP Holding B.V.

发明人： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC分类号： C23C16/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/76879

摘要： A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US20240339493A1

公开(公告)日：2024-10-10

申请号：US18624808

申请日：2024-04-02

申请人： ASM IP Holding B.V.

发明人： Alessandra Leonhardt ,  Varun Sharma ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Andrea Illiberi ,  Jerome Innocent ,  Aditya Chauhan

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/778

CPC分类号： H01L29/0607 ,  H01L21/02362 ,  H01L28/75 ,  H01L29/7786

摘要： Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.

公开(公告)号：US20240331984A1

公开(公告)日：2024-10-03

申请号：US18620464

申请日：2024-03-28

申请人： ASM IP Holding B.V.

发明人： Yanfu Lu ,  Alexandros Demos

IPC分类号： H01J37/32 ,  C23C16/24 ,  C23C16/46 ,  H01L21/02

CPC分类号： H01J37/32522 ,  C23C16/24 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02532 ,  H01L21/0262 ,  H01J2237/3321

摘要： Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

公开(公告)号：US12104250B2

公开(公告)日：2024-10-01

申请号：US17822576

申请日：2022-08-26

申请人： ASM IP Holding, B.V.

发明人： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC分类号： C23C16/455 ,  C23C16/08

CPC分类号： C23C16/45553 ,  C23C16/08 ,  C23C16/45527

摘要： The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

公开(公告)号：US12104244B2

公开(公告)日：2024-10-01

申请号：US17953769

申请日：2022-09-27

申请人： ASM IP Holding B.V.

发明人： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC分类号： C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC分类号： C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US12098460B2

公开(公告)日：2024-09-24

申请号：US17153862

申请日：2021-01-20

申请人： ASM IP Holding B.V.

发明人： Eiichiro Shiba

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC分类号： C23C16/4412 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299

摘要： A reactor system may comprise a first gas source; a second gas source; and a reaction chamber fluidly coupled to the first and second gas sources, wherein a first gas and a second may be supplied to the reaction chamber from the first and second gas sources, respectively, to achieve stability of a reaction chamber pressure. The reactor system may further comprise an exhaust line fluidly coupled to and downstream from the reaction chamber; a vent line fluidly coupled to the first and/or second gas source, and to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line configured to monitor a vent line pressure within the vent line; and/or a vent line conductance control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor.

公开(公告)号：US12094936B2

公开(公告)日：2024-09-17

申请号：US18376014

申请日：2023-10-03

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC分类号： H01L29/40 ,  C23C16/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/161 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/408 ,  C23C16/401 ,  C23C16/403 ,  H01L21/02145 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

摘要： Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20240304441A1

公开(公告)日：2024-09-12

申请号：US18598145

申请日：2024-03-07

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02216 ,  H01L21/02348

摘要： A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step comprising: providing a substrate within a first reaction chamber; providing a vinyl-substituted cyclosiloxane precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; and irradiating the substrate with a UV light.

公开(公告)号：US20240287679A1

公开(公告)日：2024-08-29

申请号：US18585313

申请日：2024-02-23

申请人： ASM IP Holding B.V.

发明人： Yongjin Jeong ,  Naoto Tsuji ,  ByeongPil Park ,  Yonjong Jeon

IPC分类号： C23C16/46 ,  H01L21/67

CPC分类号： C23C16/46 ,  H01L21/67109

摘要： A wafer processing apparatus may be presented. The apparatus may comprise a wafer support provided with a heater for supporting and heating the wafer, a chamber for enclosing and processing the wafer, a showerhead for letting gas in the chamber, a pumping port for removing gas from the chamber, a black wall with a substantially high emissivity provided to the chamber near the pumping port and configured to partly encircle the wafer support; and a white wall with a substantially low emissivity provided to the chamber on opposite side of the pumping port and configured to partly encircle the wafer support.