公开(公告)号：US20240203734A1

公开(公告)日：2024-06-20

申请号：US18540329

申请日：2023-12-14

申请人： ASM IP Holding B.V.

发明人： Maritza Mujica ,  Ernesto Suarez ,  Amir Kajbafvala ,  Rami Khazaka ,  Arum Murali ,  Frederick Aryeetey ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Bibek Karki

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L29/78

CPC分类号： H01L21/0262 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02532 ,  H01L21/02579 ,  H01L29/7848 ,  H01L29/167

摘要： Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.

公开(公告)号：US12057314B2

公开(公告)日：2024-08-06

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： C30B25/16 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/18 ,  C30B29/52 ,  H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20240068103A1

公开(公告)日：2024-02-29

申请号：US18458101

申请日：2023-08-29

申请人： ASM IP Holding, B.V.

发明人： Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Amir Kajbafvala ,  Arun Murali

IPC分类号： C23C16/52 ,  C23C16/30 ,  C23C16/458 ,  C23C16/46

CPC分类号： C23C16/52 ,  C23C16/30 ,  C23C16/4584 ,  C23C16/46 ,  G01K7/04

摘要： A chamber arrangement has a chamber body with upper and lower walls. A substrate support is arranged within an interior of the chamber body and supported for rotation about a rotation axis. An upper heater element array is supported above the upper wall and a lower heater element array supported below the lower wall. A pyrometer is supported above the upper heater element array, is optically coupled to the interior of the chamber body, and is operably connected to the upper heater element array. A thermocouple is arranged within the interior of the chamber body, is in intimate mechanical contact with the substrate support, and is operably connected to the lower heater element array. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20240331984A1

公开(公告)日：2024-10-03

申请号：US18620464

申请日：2024-03-28

申请人： ASM IP Holding B.V.

发明人： Yanfu Lu ,  Alexandros Demos

IPC分类号： H01J37/32 ,  C23C16/24 ,  C23C16/46 ,  H01L21/02

CPC分类号： H01J37/32522 ,  C23C16/24 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02532 ,  H01L21/0262 ,  H01J2237/3321

摘要： Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

公开(公告)号：US20240203733A1

公开(公告)日：2024-06-20

申请号：US18535715

申请日：2023-12-11

申请人： ASM IP Holding B.V.

发明人： Omar Elleuch ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos

IPC分类号： H01L21/02 ,  C23C16/52

CPC分类号： H01L21/0262 ,  C23C16/52 ,  H01L21/02532

摘要： A material layer deposition method includes supporting one and only one substrate in a chamber arrangement, exposing the substrate to a first material layer precursor and a second material layer precursor, and forming a first material layer overlaying the substrate using the first material layer precursor and the second material layer precursor. The first material layer is exposed to the first material layer to the first material layer precursor and a second material layer formed onto the first material layer using the first material layer precursor. The second material layer precursor includes a germanium-containing material layer precursor and the first material layer precursor includes at least one of trisilane (Si3H8) and tetrasilane (Si4H10). Material layer stacks, semiconductor processing systems, and computer program products are also described.

公开(公告)号：US11959173B2

公开(公告)日：2024-04-16

申请号：US17697079

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC分类号： C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC分类号： C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

摘要： A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20240209510A1

公开(公告)日：2024-06-27

申请号：US18598172

申请日：2024-03-07

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC分类号： C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC分类号： C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

摘要： A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20220282370A1

公开(公告)日：2022-09-08

申请号：US17684523

申请日：2022-03-02

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC分类号： C23C16/458 ,  C23C16/52 ,  C23C16/22

摘要： A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

公开(公告)号：US20210358741A1

公开(公告)日：2021-11-18

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B25/16 ,  C30B29/52 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20240332016A1

公开(公告)日：2024-10-03

申请号：US18742250

申请日：2024-06-13

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： H01L21/02 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.