专利检索 ap:("ASM IP Holding B.V.") AND inv:"Yen Lin Leow" 第 1 页

1.

发明申请
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS 有权

公开(公告)号：US20210358741A1

公开(公告)日：2021-11-18

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala , Peter Westrom , Joe Margetis , Xin Sun , Caleb Miskin , Yen Lin Leow , Yanfu Lu

IPC分类号： H01L21/02 , C30B25/18 , C30B25/16 , C30B29/52 , C23C16/08 , C23C16/455 , C23C16/52

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

2.

发明授权
Methods for silicon germanium uniformity control using multiple precursors 有权

公开(公告)号：US12057314B2

公开(公告)日：2024-08-06

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala , Peter Westrom , Joe Margetis , Xin Sun , Caleb Miskin , Yen Lin Leow , Yanfu Lu

IPC分类号： C30B25/16 , C23C16/08 , C23C16/455 , C23C16/52 , C30B25/18 , C30B29/52 , H01L21/02

CPC分类号： H01L21/0262 , C23C16/08 , C23C16/45512 , C23C16/52 , C30B25/165 , C30B25/186 , C30B29/52 , H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

3.

发明公开
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS 审中-公开

公开(公告)号：US20240332016A1

公开(公告)日：2024-10-03

申请号：US18742250

申请日：2024-06-13

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala , Peter Westrom , Joe Margetis , Xin Sun , Caleb Miskin , Yen Lin Leow , Yanfu Lu

IPC分类号： H01L21/02 , C23C16/08 , C23C16/455 , C23C16/52 , C30B25/16 , C30B25/18 , C30B29/52

CPC分类号： H01L21/0262 , C23C16/08 , C23C16/45512 , C23C16/52 , C30B25/165 , C30B25/186 , C30B29/52 , H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.