公开(公告)号：US11959173B2

公开(公告)日：2024-04-16

申请号：US17697079

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC分类号： C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC分类号： C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

摘要： A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

申请人： ASM IP Holding B.V.

发明人： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC分类号： H01L21/687 ,  C23C16/52 ,  C23C16/458

摘要： A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20240355688A1

公开(公告)日：2024-10-24

申请号：US18642877

申请日：2024-04-23

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Arun Murali ,  Caleb Miskin

IPC分类号： H01L21/66 ,  C23C16/02 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67

CPC分类号： H01L22/20 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67248

摘要： A method for removing contaminants from an upper surface of a substrate inside various chambers of a semiconductor processing system is provided. The method may comprise heating at least a portion of the upper surface to a predetermined upper surface bake temperature to induce a chemical reaction of the contaminants with hydrogen gas in the deposition chamber and remove contaminants from the upper surface. The temperature of the bulk material forming the substrate remains substantially lower than the predetermined upper surface bake temperature. After heating the upper surface to remove the contaminants, a material layer may be deposited onto the upper surface. The semiconductor processing system and computer instructions for operating the semiconductor processing system are also described.

公开(公告)号：US20240203734A1

公开(公告)日：2024-06-20

申请号：US18540329

申请日：2023-12-14

申请人： ASM IP Holding B.V.

发明人： Maritza Mujica ,  Ernesto Suarez ,  Amir Kajbafvala ,  Rami Khazaka ,  Arum Murali ,  Frederick Aryeetey ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Bibek Karki

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L29/78

CPC分类号： H01L21/0262 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02532 ,  H01L21/02579 ,  H01L29/7848 ,  H01L29/167

摘要： Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.

公开(公告)号：US11996289B2

公开(公告)日：2024-05-28

申请号：US17141360

申请日：2021-01-05

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Joe Margetis ,  Xin Sun ,  David Kohen ,  Dieter Pierreux

IPC分类号： C23C16/24 ,  C23C16/08 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/52 ,  C30B25/165 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

摘要： Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

公开(公告)号：US20240209510A1

公开(公告)日：2024-06-27

申请号：US18598172

申请日：2024-03-07

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC分类号： C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC分类号： C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

摘要： A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20220282370A1

公开(公告)日：2022-09-08

申请号：US17684523

申请日：2022-03-02

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC分类号： C23C16/458 ,  C23C16/52 ,  C23C16/22

摘要： A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

公开(公告)号：US20210358741A1

公开(公告)日：2021-11-18

申请号：US17317965

申请日：2021-05-12

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B25/16 ,  C30B29/52 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

公开(公告)号：US20210102290A1

公开(公告)日：2021-04-08

申请号：US17060764

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Tomas Hernandez Acosta ,  Alexandros Demos ,  Peter Westrom ,  Caleb Miskin ,  Amir Kajbafvala ,  Ali Moballegh

IPC分类号： C23C16/455 ,  C23C16/52 ,  B01J4/00 ,  C23C16/46

摘要： A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

公开(公告)号：US20240332016A1

公开(公告)日：2024-10-03

申请号：US18742250

申请日：2024-06-13

申请人： ASM IP Holding B.V.

发明人： Amir Kajbafvala ,  Peter Westrom ,  Joe Margetis ,  Xin Sun ,  Caleb Miskin ,  Yen Lin Leow ,  Yanfu Lu

IPC分类号： H01L21/02 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/52

CPC分类号： H01L21/0262 ,  C23C16/08 ,  C23C16/45512 ,  C23C16/52 ,  C30B25/165 ,  C30B25/186 ,  C30B29/52 ,  H01L21/02532

摘要： A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.