公开(公告)号：US20240355688A1

公开(公告)日：2024-10-24

申请号：US18642877

申请日：2024-04-23

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Arun Murali ,  Caleb Miskin

IPC: H01L21/66 ,  C23C16/02 ,  C23C16/455 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01L22/20 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67248

Abstract: A method for removing contaminants from an upper surface of a substrate inside various chambers of a semiconductor processing system is provided. The method may comprise heating at least a portion of the upper surface to a predetermined upper surface bake temperature to induce a chemical reaction of the contaminants with hydrogen gas in the deposition chamber and remove contaminants from the upper surface. The temperature of the bulk material forming the substrate remains substantially lower than the predetermined upper surface bake temperature. After heating the upper surface to remove the contaminants, a material layer may be deposited onto the upper surface. The semiconductor processing system and computer instructions for operating the semiconductor processing system are also described.

公开(公告)号：US20240203734A1

公开(公告)日：2024-06-20

申请号：US18540329

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Maritza Mujica ,  Ernesto Suarez ,  Amir Kajbafvala ,  Rami Khazaka ,  Arum Murali ,  Frederick Aryeetey ,  Yanfu Lu ,  Caleb Miskin ,  Alexandros Demos ,  Bibek Karki

IPC: H01L21/02 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L29/78

CPC classification number: H01L21/0262 ,  C30B25/10 ,  C30B25/16 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02532 ,  H01L21/02579 ,  H01L29/7848 ,  H01L29/167

Abstract: Methods for forming multilayer structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual deposition phase of multiphase deposition process. Semiconductor device structures including multilayer structures are also disclosed.

公开(公告)号：US11996289B2

公开(公告)日：2024-05-28

申请号：US17141360

申请日：2021-01-05

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Joe Margetis ,  Xin Sun ,  David Kohen ,  Dieter Pierreux

IPC: C23C16/24 ,  C23C16/08 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L21/0262 ,  C23C16/08 ,  C23C16/24 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/52 ,  C30B25/165 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

公开(公告)号：US20250051918A1

公开(公告)日：2025-02-13

申请号：US18927164

申请日：2024-10-25

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: C23C16/458 ,  C23C16/22 ,  C23C16/52

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

公开(公告)号：US12173404B2

公开(公告)日：2024-12-24

申请号：US17184290

申请日：2021-02-24

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Caleb Miskin

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

Abstract: A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.

公开(公告)号：US11959173B2

公开(公告)日：2024-04-16

申请号：US17697079

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC classification number: C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

Applicant: ASM IP Holding B.V.

Inventor： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC: H01L21/687 ,  C23C16/52 ,  C23C16/458

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20240209510A1

公开(公告)日：2024-06-27

申请号：US18598172

申请日：2024-03-07

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC classification number: C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20220282370A1

公开(公告)日：2022-09-08

申请号：US17684523

申请日：2022-03-02

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: C23C16/458 ,  C23C16/52 ,  C23C16/22

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.