-
公开(公告)号:US20230386889A1
公开(公告)日:2023-11-30
申请号:US18448638
申请日:2023-08-11
申请人: ASM IP Holding, B.V.
IPC分类号: H01L21/687 , H01L21/268 , H01L21/67 , H01L21/324
CPC分类号: H01L21/6875 , H01L21/2686 , H01L21/67253 , H01L21/67115 , H01L21/324 , H01L21/68735 , H01L21/67248
摘要: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.
-
公开(公告)号:US11764101B2
公开(公告)日:2023-09-19
申请号:US17075504
申请日:2020-10-20
申请人: ASM IP HOLDING B.V.
IPC分类号: H01L21/324 , H01L21/687 , H01L21/67 , H01L21/268 , H01L21/683
CPC分类号: H01L21/6875 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L21/67253 , H01L21/68735 , H01L21/67248
摘要: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.
-
3.
公开(公告)号:US20230116427A1
公开(公告)日:2023-04-13
申请号:US17962009
申请日:2022-10-07
申请人: ASM IP Holding B.V.
发明人: Junwei Su , Jiwen Xiang , Shujin Huang , Loc Vinh Tran , Wentao Wang , Xing Lin
摘要: A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.
-
公开(公告)号:US20220301906A1
公开(公告)日:2022-09-22
申请号:US17697164
申请日:2022-03-17
申请人: ASM IP Holding B.V.
发明人: Rutvij Naik , Shujin Huang , Junwei Su , Xing Lin
摘要: A reactor system designed to provide accurate monitoring of wafer temperatures during deposition steps. The reactor system includes a pyrometer mounting assembly supporting and positioning three or more pyrometers (e.g., infrared (IR) pyrometers) relative to the reaction chamber to measure a center wafer temperature and an edge wafer temperature as well as reaction chamber temperature. The pyrometer mounting assembly provides a small spot size or temperature sensing area with the edge pyrometer to accurately measure edge wafer temperatures. A jig assembly, and installation method for each tool setup, is provided for use in achieving accurate alignment of the IR pyrometer sensing spot (and the edge pyrometer) relative to the wafer, when the pyrometer mounting assembly is mounted upon a lamp bank in the reactor system or in tool setup. The wafer edge temperature sensing with the reactor system assembled with proper alignment ensures accurate and repeatable measurement of wafer temperatures.
-
公开(公告)号:US20220301905A1
公开(公告)日:2022-09-22
申请号:US17697145
申请日:2022-03-17
申请人: ASM IP Holding B.V.
发明人: Han Ye , Kai Zhou , Peipei Gao , Wentao Wang , Kishor Patil , Fan Gao , Krishnaswamy Mahadevan , Xing Lin , Alexandros Demos
摘要: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.
-
公开(公告)号:US20220301856A1
公开(公告)日:2022-09-22
申请号:US17655245
申请日:2022-03-17
申请人: ASM IP HOLDING B.V.
发明人: Chuang Wei , Aditya Chaudhury , Prahlad Kulkarni , Xing Lin , Xiaoda Sun , Woo Jung Shin , Bubesh Babu Jotheeswaran , Fei Wang , Qu Jin , Aditya Walimbe , Rajeev Reddy Kosireddy , Yen Chun Fu , Amin Azimi
IPC分类号: H01L21/02 , H01L21/311 , B08B5/00 , H01L21/67
摘要: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.
-
公开(公告)号:US20220181193A1
公开(公告)日:2022-06-09
申请号:US17457605
申请日:2021-12-03
申请人: ASM IP HOLDING B.V.
发明人: Peipei Gao , Wentao Wang , Xing Lin , Han Ye , Ion Hong Chao , Siyao Luan , Alexandros Demos , Fan Gao
IPC分类号: H01L21/687
摘要: A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.
-
公开(公告)号:US20210125853A1
公开(公告)日:2021-04-29
申请号:US17075504
申请日:2020-10-20
申请人: ASM IP HOLDING B.V.
IPC分类号: H01L21/687 , H01L21/324 , H01L21/67 , H01L21/268
摘要: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.
-
公开(公告)号:US20240071804A1
公开(公告)日:2024-02-29
申请号:US18238573
申请日:2023-08-28
申请人: ASM IP Holding B.V.
发明人: Peipei Gao , Wentao Wang , Han Ye , Kai Zhou , Fan Gao , Xing Lin
IPC分类号: H01L21/687 , H01L21/02 , H01L21/67
CPC分类号: H01L21/68735 , H01L21/0262 , H01L21/67017 , H01L21/67248
摘要: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.
-
10.
公开(公告)号:US20220298672A1
公开(公告)日:2022-09-22
申请号:US17697107
申请日:2022-03-17
申请人: ASM IP Holding B.V.
发明人: Hichem M'Saad , Alexandros Demos , Xing Lin , Junwei Su , Matthew Goodman , Daw Gen Lim , Shujin Huang , Rutvij Naik
IPC分类号: C30B25/16 , H01L21/66 , C30B25/10 , C30B25/12 , C30B23/06 , C23C16/52 , C23C16/46 , C23C14/54 , F27B17/00 , H05B3/00 , H05B1/02 , G01J5/00
摘要: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.
-
-
-
-
-
-
-
-
-