公开(公告)号：US20230307255A1

公开(公告)日：2023-09-28

申请号：US18187468

申请日：2023-03-21

申请人： ASM IP Holding, B.V.

发明人： Gregory Deye ,  Caleb Miskin ,  Fan Gao ,  Peipei Gao

IPC分类号： H01L21/67 ,  C23C16/44 ,  B08B9/032

CPC分类号： H01L21/67017 ,  B08B9/0325 ,  B08B9/0328 ,  C23C16/4405 ,  C23C16/4412 ,  B08B2209/032

摘要： A semiconductor processing system includes a chamber arrangement, an exhaust arrangement connected to the chamber arrangement, an accretion sensor supported within the exhaust arrangement, and a processor. The processor is disposed in communication with the accretion sensor and is responsive to instructions recorded on a non-transitory machine-readable medium to receive an accretion signal from the accretion sensor, the accretion signal indicative of an accretion amount disposed within the exhaust arrangement, receive a predetermined accretion amount value, and compare the accretion amount to the predetermined accretion amount value. The instructions further cause the processor to execute an accretion countermeasure when the received accretion amount is greater than the predetermined accretion amount value. Methods of controlling accretion within exhaust arrangements for semiconductor processing systems and foreline assemblies for semiconductor processing systems are also described.

公开(公告)号：US20240071804A1

公开(公告)日：2024-02-29

申请号：US18238573

申请日：2023-08-28

申请人： ASM IP Holding B.V.

发明人： Peipei Gao ,  Wentao Wang ,  Han Ye ,  Kai Zhou ,  Fan Gao ,  Xing Lin

IPC分类号： H01L21/687 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/68735 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/67248

摘要： Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20220301905A1

公开(公告)日：2022-09-22

申请号：US17697145

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Han Ye ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Kishor Patil ,  Fan Gao ,  Krishnaswamy Mahadevan ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  H01L21/66 ,  C23C16/46 ,  C23C16/52

摘要： A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

公开(公告)号：US20220181193A1

公开(公告)日：2022-06-09

申请号：US17457605

申请日：2021-12-03

申请人： ASM IP HOLDING B.V.

发明人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

IPC分类号： H01L21/687

摘要： A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

公开(公告)号：USD1031676S1

公开(公告)日：2024-06-18

申请号：US29760951

申请日：2020-12-04

申请人： ASM IP HOLDING B.V.

设计人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

摘要： FIG. 1 is a front perspective view of a combined susceptor, support, and lift system;
FIG. 2 is a back perspective view thereof;
FIG. 3 is a side view thereof;
FIG. 4 is a cross-sectional view taken along line 4-4 as indicated in FIG. 3;
FIG. 5 is an enlarged view of FIG. 4 shown without broken line environmental subject matter for clarity of the claimed subject matter;
FIG. 6 is a top perspective view of the lift pin thereof;
FIG. 7 is a bottom perspective view of the lift pin thereof;
FIG. 8 is a front view of the lift pin thereof;
FIG. 9 is a back view of the lift pin thereof;
FIG. 10 is a left view of the lift pin thereof;
FIG. 11 is a right view of the lift pin thereof;
FIG. 12 is a top view of the lift pin thereof; and,
FIG. 13 is a bottom view of the lift pin thereof.
The dash-dash broken lines within the shaded area and the dash-dash broken lines in FIGS. 1-13 depicting various components of the susceptor, support, and lift system are for the purpose of illustrating environmental subject matter and portions of the article that form no part of the claimed design. The dot-dash broken line in FIG. 3 is for the purpose of defining the cross-sectional view shown in FIG. 4.

公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

申请人： ASM IP Holding B.V.

发明人： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC分类号： H01L21/67 ,  C23C16/458 ,  C23C16/455

摘要： A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US12006572B2

公开(公告)日：2024-06-11

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： H01J37/32 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC分类号： C23C16/45582 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/3244

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20240175138A1

公开(公告)日：2024-05-30

申请号：US18518393

申请日：2023-11-22

申请人： ASM IP HOlding B.V.

发明人： Fan Gao ,  Peipei Gao ,  Xing Lin ,  Arun Murali ,  Gregory Deye ,  Frederick Aryeetey ,  Amir Kajbafvala ,  Caleb Miskin ,  Alexandros Demos

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/46 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67253

摘要： Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

公开(公告)号：US20240112930A1

公开(公告)日：2024-04-04

申请号：US18476117

申请日：2023-09-27

申请人： ASM IP Holding, B.V.

发明人： Fan Gao ,  Peipei Gao ,  Wentao Wang ,  Kai Zhou ,  Kishor Patil ,  Han Ye ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  B23K26/03 ,  B23K26/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  G05D23/19

CPC分类号： H01L21/67115 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/0643 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/483 ,  C23C16/52 ,  G05D23/1931 ,  H01L21/67109

摘要： A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.