发明公开
- 专利标题: SYSTEMS AND METHODS FOR CONTROLLING PRESSURE IN SUBSTRATE PROCESSING SYSTEMS
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申请号: US18518393申请日: 2023-11-22
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公开(公告)号: US20240175138A1公开(公告)日: 2024-05-30
- 发明人: Fan Gao , Peipei Gao , Xing Lin , Arun Murali , Gregory Deye , Frederick Aryeetey , Amir Kajbafvala , Caleb Miskin , Alexandros Demos
- 申请人: ASM IP HOlding B.V.
- 申请人地址: NL Almere
- 专利权人: ASM IP HOlding B.V.
- 当前专利权人: ASM IP HOlding B.V.
- 当前专利权人地址: NL Almere
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; C23C16/44 ; C23C16/46 ; H01L21/67
摘要:
Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).
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