公开(公告)号：US12119228B2

公开(公告)日：2024-10-15

申请号：US17845325

申请日：2022-06-21

申请人： ASM IP Holding B.V.

发明人： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC分类号： C23C16/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/76879

摘要： A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US12094936B2

公开(公告)日：2024-09-17

申请号：US18376014

申请日：2023-10-03

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC分类号： H01L29/40 ,  C23C16/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/161 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/408 ,  C23C16/401 ,  C23C16/403 ,  H01L21/02145 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

摘要： Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

申请人： ASM IP Holding, B.V.

发明人： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/4408

摘要： Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US11946157B2

公开(公告)日：2024-04-02

申请号：US17743039

申请日：2022-05-12

申请人： ASM IP Holding B.V.

发明人： Rami Khazaka ,  Qi Xie

IPC分类号： C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

CPC分类号： C30B25/10 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

摘要： Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11646205B2

公开(公告)日：2023-05-09

申请号：US17071149

申请日：2020-10-15

申请人： ASM IP Holding B.V.

发明人： Rami Khazaka ,  Lucas Petersen Barbosa Lima ,  Giuseppe Alessio Verni ,  Qi Xie

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L29/36 ,  C23C16/52 ,  H01L21/67

CPC分类号： H01L21/02636 ,  C23C16/52 ,  H01L21/30604 ,  H01L21/67063 ,  H01L29/36

摘要： A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.

公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

申请人： ASM IP Holding B.V.

发明人： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

摘要： Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US11521851B2

公开(公告)日：2022-12-06

申请号：US17162279

申请日：2021-01-29

申请人： ASM IP Holding B.V.

发明人： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

IPC分类号： H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

摘要： Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20220364262A1

公开(公告)日：2022-11-17

申请号：US17743039

申请日：2022-05-12

申请人： ASM IP Holding B.V.

发明人： Rami Khazaka ,  Qi Xie

IPC分类号： C30B25/10 ,  C30B33/12 ,  C30B29/08 ,  C30B29/06

摘要： Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US11411088B2

公开(公告)日：2022-08-09

申请号：US17026510

申请日：2020-09-21

申请人： ASM IP Holding B.V.

发明人： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC分类号： H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

摘要： Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20210332476A1

公开(公告)日：2021-10-28

申请号：US17113301

申请日：2020-12-07

申请人： ASM IP Holding B.V.

发明人： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC分类号： C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56

摘要： The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.