公开(公告)号：US20240271280A1

公开(公告)日：2024-08-15

申请号：US18436109

申请日：2024-02-08

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC分类号： C23C16/455 ,  C23C16/56

CPC分类号： C23C16/45542 ,  C23C16/45553 ,  C23C16/56

摘要： A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step at a deposition temperature comprising: providing a substrate within a first reaction chamber; providing a precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; providing a first curing step at a first curing temperature; and providing a second curing step at a second curing temperature, wherein the second curing temperature is higher than the first curing temperature.

公开(公告)号：US11646197B2

公开(公告)日：2023-05-09

申请号：US16986274

申请日：2020-08-06

申请人： ASM IP Holding B.V.

发明人： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

CPC分类号： H01L21/0228 ,  C23C16/26 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76837

摘要： A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US11626316B2

公开(公告)日：2023-04-11

申请号：US16950899

申请日：2020-11-17

申请人： ASM IP Holding B.V.

发明人： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/56

摘要： Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US20240011151A1

公开(公告)日：2024-01-11

申请号：US18217685

申请日：2023-07-03

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi

IPC分类号： C23C16/26 ,  C23C16/04 ,  H01L21/311

CPC分类号： C23C16/26 ,  C23C16/045 ,  H01L21/31116

摘要： A method for forming a carbon film on inner wall surfaces of a plurality of trenches which are formed on a substrate to be processed includes a depositing step of depositing the carbon film on the inner wall surfaces of the trenches of the substrate to be processed by supplying a mixed gas containing a carbon precursor gas and a carrier gas and applying a high frequency voltage to the mixed gas to generate plasma, an interval step of stopping the supply of the carbon precursor gas and the application of the high frequency voltage while continuing the supply of the carrier gas, and an etching step of etching a part of the carbon film by continuing to supply the carrier gas and applying a high frequency voltage to the carrier gas to generate plasma, wherein the above steps are repeated in the above order.

公开(公告)号：US20230043629A1

公开(公告)日：2023-02-09

申请号：US17865580

申请日：2022-07-15

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa

IPC分类号： C23C16/32 ,  C23C16/04 ,  C23C16/455

摘要： Methods and systems for forming a structure including a silicon carbide layer and structures formed using the methods and systems are disclosed. Exemplary methods include providing a silicon carbide precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially flowable, viscous silicon carbide material on a surface of the substrate, wherein the initially viscous carbon material becomes the silicon carbide layer. Exemplary methods can include use of a silicon carbide precursor that includes a carbon-carbon triple bond and/or use of a relatively low plasma power density (e.g., less than 3 W/cm2).

公开(公告)号：US11430674B2

公开(公告)日：2022-08-30

申请号：US16108950

申请日：2018-08-22

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa

IPC分类号： H01L21/67 ,  C23C16/52 ,  C23C16/448

摘要： An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

公开(公告)号：US20200066552A1

公开(公告)日：2020-02-27

申请号：US16108950

申请日：2018-08-22

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa

IPC分类号： H01L21/67 ,  C23C16/448 ,  C23C16/52

摘要： An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

公开(公告)号：US20200013612A1

公开(公告)日：2020-01-09

申请号：US16427288

申请日：2019-05-30

申请人： ASM IP Holding B.V.

发明人： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/768

摘要： A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US12040177B2

公开(公告)日：2024-07-16

申请号：US17401324

申请日：2021-08-13

申请人： ASM IP Holding B.V.

发明人： Yoshio Susa

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32

CPC分类号： H01L21/022 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/0228 ,  H01J2237/332

摘要： Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N2O).

公开(公告)号：US20220336204A1

公开(公告)日：2022-10-20

申请号：US17720214

申请日：2022-04-13

申请人： ASM IP Holding B.V.

发明人： Ryo Miyama ,  Yoshio Susa ,  Yoshiyuki Kikuchi ,  Hirotsugu Sugiura

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/26 ,  C23C16/52

摘要： Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.