公开(公告)号：US12112988B2

公开(公告)日：2024-10-08

申请号：US18361566

申请日：2023-07-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chung-Ting Ko ,  Chi On Chui

IPC分类号： H01L21/82 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/764 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L21/823481 ,  H01L21/28518 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/76229 ,  H01L21/764 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545

摘要： A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. The isolation regions extend into a semiconductor substrate. The method further includes etching a portion of the semiconductor fin to form a trench, filling the trench with a first dielectric material, wherein the first dielectric material has a first bandgap, and performing a recessing process to recess the first dielectric material. A recess is formed between opposing portions of the isolation regions. The recess is filled with a second dielectric material. The first dielectric material and the second dielectric material in combination form an additional isolation region. The second dielectric material has a second bandgap smaller than the first bandgap.

公开(公告)号：US20240282719A1

公开(公告)日：2024-08-22

申请号：US18648510

申请日：2024-04-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： YUAN-SHENG HUANG ,  RYAN CHIA-JEN CHEN

IPC分类号： H01L23/00 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L23/562 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

摘要： A method for forming a semiconductor structure includes following operations. A substrate is provided. The substrate has fin structures and includes a material having a substrate thermal expansion coefficient. A first dielectric material is formed over the substrate and the fin structures. The first dielectric material has a first thermal expansion coefficient. A second dielectric material is formed over the first dielectric material. The second dielectric material has a second thermal expansion coefficient. The second dielectric material is recessed to form an isolation structure between the fin structures.

公开(公告)号：US12034075B2

公开(公告)日：2024-07-09

申请号：US17327737

申请日：2021-05-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/308 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L21/02142 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/308 ,  H01L21/76283 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66795 ,  H01L21/02145 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76837 ,  H01L29/7843

摘要： A device includes a semiconductive substrate, a fin structure, and an isolation material. The fin structure extends from the semiconductive substrate. The isolation material is over the semiconductive substrate and adjacent to the fin structure, wherein the isolation material includes a first metal element, a second metal element, and oxide.

公开(公告)号：US12009426B2

公开(公告)日：2024-06-11

申请号：US17827457

申请日：2022-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jhon Jhy Liaw

IPC分类号： H01L29/94 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/76 ,  H01L29/78 ,  H01L31/062

CPC分类号： H01L29/7848 ,  H01L21/76229 ,  H01L21/76816 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/0207 ,  H01L27/0629 ,  H01L29/0653 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/66545 ,  Y02E10/50

摘要： The present disclosure provides one embodiment of a method of forming an integrated circuit structure. The method includes forming a shallow trench isolation (STI) structure in a semiconductor substrate of a first semiconductor material, thereby defining a plurality of fin-type active regions separated from each other by the STI structure; forming gate stacks on the fin-type active regions; forming an inter-layer dielectric (ILD) layer filling in gaps between the gate stacks; patterning the ILD layer to form a trench between adjacent two of the gate stacks; depositing a first dielectric material layer that is conformal in the trench; filling the trench with a second dielectric material layer; patterning the second dielectric material layer to form a contact opening; and filling a conductive material in the contact opening to form a contact feature.

公开(公告)号：US20240178054A1

公开(公告)日：2024-05-30

申请号：US18520894

申请日：2023-11-28

申请人： STMicroelectronics S.r.l.

发明人： Emanuele LAGO ,  Nunzia MALAGNINO ,  Damiano RICCARDI

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/76283

摘要： A body of semiconductor material has a surface and accommodates an active area, conductive regions, a first deep insulation structure extending in the active area from the surface of the body in a first trench, and a second deep insulation structure extending in the active area from the surface of the body in a second trench and surrounding the conductive regions. The first deep insulation structure has insulation walls surrounding a conductive filling portion. The second deep insulation structure has a solid insulating region filling the second trench. The first deep insulation region has a first width and a first depth and the second deep insulation structure has a second width and a second depth. The second width is smaller than the first width and the second depth is smaller than the first depth.

公开(公告)号：US11955550B2

公开(公告)日：2024-04-09

申请号：US17308324

申请日：2021-05-05

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Fei Zhou

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7846 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/76229 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

摘要： Semiconductor devices is provided. The semiconductor structure includes a semiconductor substrate having a middle region and an edge region adjacent to the middle region, a plurality of first fins formed on the middle region of the semiconductor substrate, a plurality of second fins formed on the edge region of the semiconductor substrate, a first adjustment layer formed on sidewall surfaces of the plurality of first fins and on the middle region of the semiconductor substrate, and an isolation structure formed on the semiconductor substrate and with a top surface lower top surfaces of the plurality of first fins and the plurality of second fins.

公开(公告)号：US11949014B2

公开(公告)日：2024-04-02

申请号：US17722514

申请日：2022-04-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Barn Chen ,  Ting-Huang Kuo ,  Shiu-Ko Jangjian ,  Chi-Cherng Jeng

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L49/02

CPC分类号： H01L29/7851 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0629 ,  H01L27/0886 ,  H01L28/40 ,  H01L29/66795 ,  H01L29/7853

摘要： A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a first, second, third and fourth fin structures over a substrate. The first and the second fin structures have a first and a second sidewall surfaces respectively. The third and the fourth fin structure have a third and a fourth sidewall surfaces respectively. The first and the second sidewall surfaces extend along a first direction. The third and the fourth sidewall surfaces extend along a second direction different from the first direction. A first and a second isolation structures are over the substrate and surrounding the first and the second fin structure and surrounding the third and the fourth fin structures respectively. A distance between top portions of the third and the fourth sidewall surfaces is greater than that between top portions of the first and the second sidewall surfaces.

公开(公告)号：US11923235B2

公开(公告)日：2024-03-05

申请号：US17877824

申请日：2022-07-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Cheng-Ta Wu ,  Chii-Ming Wu ,  Sen-Hong Syue ,  Cheng-Po Chau

IPC分类号： H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L27/105 ,  H01L27/146

CPC分类号： H01L21/76229 ,  H01L21/76232 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/785 ,  H01L27/105 ,  H01L27/1463

摘要： A method includes forming a first trench and a second trench in a semiconductor substrate; forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench; after forming the first mask, deepening the second trench and the second portion of the first trench; after deepening the second trench and the second portion of the first trench, removing the first mask; and after removing the first mask, filling a dielectric material in both the first and second trenches.

公开(公告)号：US11901218B2

公开(公告)日：2024-02-13

申请号：US17715261

申请日：2022-04-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Szu-Ying Chen ,  Sen-Hong Syue ,  Huicheng Chang ,  Yee-Chia Yeo

IPC分类号： H01L21/762 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06

CPC分类号： H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649

摘要： A method includes forming a first plurality of fins in a first region of a substrate, a first recess being interposed between adjacent fins in the first region of the substrate, the first recess having a first depth and a first width, forming a second plurality of fins in a second region of the substrate, a second recess being interposed between adjacent fins in the second region of the substrate, the second recess having a second depth and a second width, the second width of the second recess being less than the first width of the first recess, the second depth of the second recess being less than the first depth of the first recess, forming a first dielectric layer in the first recess and the second recess, and converting the first dielectric layer in the first recess and the second recess to a treated dielectric layer.

公开(公告)号：US20240047276A1

公开(公告)日：2024-02-08

申请号：US18486399

申请日：2023-10-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Han-Pin CHUNG ,  Chih-Tang PENG ,  Tien-I BAO

IPC分类号： H01L21/8238 ,  H01L21/762 ,  H01L21/02 ,  H01L27/092 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L21/823878 ,  H01L21/76229 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02271 ,  H01L27/0924 ,  H01L21/823821 ,  H01L21/02252 ,  H01L29/7846 ,  H01L21/823481 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/7843 ,  H01L21/02323 ,  H01L21/845

摘要： A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure and a second protruding structure over a substrate, and forming a first insulation material layer on the first protruding structure and the second protruding structure. The method includes performing a pre-treatment process on the first insulation material layer to form a first treated insulation material layer, and forming a second insulation material layer on the first treated insulation material layer. The method includes performing a first insulation material conversion process on the first treated insulation material layer and the second insulation material layer. The first protruding structure and the second protruding structure are bent toward opposite directions during the first insulation material conversion process.