公开(公告)号：US20240304441A1

公开(公告)日：2024-09-12

申请号：US18598145

申请日：2024-03-07

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02216 ,  H01L21/02348

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step comprising: providing a substrate within a first reaction chamber; providing a vinyl-substituted cyclosiloxane precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; and irradiating the substrate with a UV light.

公开(公告)号：US20240271280A1

公开(公告)日：2024-08-15

申请号：US18436109

申请日：2024-02-08

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC: C23C16/455 ,  C23C16/56

CPC classification number: C23C16/45542 ,  C23C16/45553 ,  C23C16/56

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step at a deposition temperature comprising: providing a substrate within a first reaction chamber; providing a precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; providing a first curing step at a first curing temperature; and providing a second curing step at a second curing temperature, wherein the second curing temperature is higher than the first curing temperature.

公开(公告)号：US20210257213A1

公开(公告)日：2021-08-19

申请号：US17172738

申请日：2021-02-10

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Norihiko Ishinohachi

IPC: H01L21/02 ,  B05D1/00

Abstract: Methods and systems for forming a structure including a dielectric material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing pulsed plasma power to polymerize the one or more precursors within the reaction chamber.