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1.发明公开公开(公告)号：US20230318263A1
公开(公告)日：2023-10-05
申请号：US18192270
申请日：2023-03-29
发明人： Mattéo CHOBE , Karim HASSAN , Cécilia DUPRE
CPC分类号： H01S5/323 , H01S5/18302 , H01S5/2222 , H01S5/0425 , H01S5/305
摘要： An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.
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公开(公告)号：US09997892B2
公开(公告)日：2018-06-12
申请号：US14467439
申请日：2014-08-25
申请人： FINISAR CORPORATION
发明人： Ralph H. Johnson
CPC分类号： H01S5/18311 , H01L33/105 , H01L33/44 , H01S5/024 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/2009 , H01S5/305 , H01S5/3054 , H01S5/3081 , H01S5/3095 , H01S2301/176
摘要： A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.
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公开(公告)号：US20180109076A1
公开(公告)日：2018-04-19
申请号：US15832248
申请日：2017-12-05
发明人： Toru TAKAYAMA
CPC分类号： H01S5/2206 , G03B21/2033 , H01S5/2009 , H01S5/22 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3406 , H01S5/34333 , H01S2301/173
摘要： A light emitting element according to the present disclosure includes: a GaN substrate; a first strain correction layer disposed above the GaN substrate and including InxGa1-xN of a first conductivity type where x is greater than 0 and less than or equal to 1; a first low refractive index layer disposed above the first strain correction layer, including In1-a-bGaaAlbN of the first conductivity type, and having relationships of (a/0.98)+(b/0.8)≥1, (a/1.02)+(b/0.85)≤1, and (a/1.03)+(b/0.68)≥1; a first clad layer disposed above the first low refractive index layer, including AlxGa1-xN of the first conductivity type where z is greater than or equal to 0.03 and less than or equal to 0.06, and having a refractive index higher than a refractive index of the first low refractive index layer; and an active layer disposed above the first clad layer.
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公开(公告)号：US20170317474A1
公开(公告)日：2017-11-02
申请号：US15646716
申请日：2017-07-11
IPC分类号： H01S5/343 , H01S5/32 , H01S5/024 , H01S5/04 , H01S5/30 , H01S5/14 , H01S5/183 , B82Y20/00 , H01S5/327 , H01S3/109 , H01S5/022
CPC分类号： H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/0222 , H01S5/02461 , H01S5/04 , H01S5/14 , H01S5/183 , H01S5/18358 , H01S5/18369 , H01S5/1838 , H01S5/18383 , H01S5/305 , H01S5/3086 , H01S5/3222 , H01S5/327 , H01S5/34333
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
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公开(公告)号：US20170294761A1
公开(公告)日：2017-10-12
申请号：US15494737
申请日：2017-04-24
申请人： Sony Corporation
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.
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公开(公告)号：US09705288B2
公开(公告)日：2017-07-11
申请号：US14828207
申请日：2015-08-17
IPC分类号： H01S5/343 , H01S5/024 , H01S5/04 , H01S5/14 , H01S5/327 , B82Y20/00 , H01S5/30 , H01S5/32 , H01S5/183 , H01S3/109 , H01S5/022
CPC分类号： H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/0222 , H01S5/02461 , H01S5/04 , H01S5/14 , H01S5/183 , H01S5/18358 , H01S5/18369 , H01S5/1838 , H01S5/18383 , H01S5/305 , H01S5/3086 , H01S5/3222 , H01S5/327 , H01S5/34333
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
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公开(公告)号：US09685766B2
公开(公告)日：2017-06-20
申请号：US14725789
申请日：2015-05-29
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/026 , H01S5/0268 , H01S5/0612 , H01S5/125 , H01S5/305 , H01S5/34313 , H01S5/3434 , H01S5/4068 , H01S5/4087
摘要： Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.
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公开(公告)号：US20170149214A1
公开(公告)日：2017-05-25
申请号：US15426256
申请日：2017-02-07
发明人： Hidehiro TANIGUCHI
CPC分类号： H01S5/162 , H01S5/0425 , H01S5/22 , H01S5/305 , H01S5/3086 , H01S5/3209 , H01S5/4031
摘要： A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.
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公开(公告)号：US09660420B2
公开(公告)日：2017-05-23
申请号：US14746216
申请日：2015-06-22
申请人： Sony Corporation
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.
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公开(公告)号：US20170012410A1
公开(公告)日：2017-01-12
申请号：US15210904
申请日：2016-07-15
CPC分类号： H01S5/3213 , B82Y20/00 , H01S5/0021 , H01S5/02212 , H01S5/0224 , H01S5/2004 , H01S5/2031 , H01S5/209 , H01S5/22 , H01S5/3013 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34326 , H01S2301/18
摘要： An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9
摘要翻译： 提供了一种基于铝镓铟磷（AlGaInP）的半导体激光器件。 在由n型GaAs（砷化镓）形成的半导体衬底的主表面上，从底层开始，形成n型缓冲层，由含硅（Si）的AlGaInP基半导体形成的n型覆层， 形成掺杂剂，活性层，由含有镁（Mg）或锌（Zn）作为掺杂剂的AlGaInP系半导体形成的p型包覆层，蚀刻停止层和p型接触层。 这里，当将AlGaInP基半导体的Al组成比x作为（Al x Ga 1-x）0.5 In 0.5 P定义为Al和Ga的组成比时，将n型包覆层的组成表示为（Al x Ga 1 -xn）0.5In0.5P（0.9
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