专利检索 ap:("COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES") AND inv:"Mattéo CHOBE" 第 1 页

1.

发明公开
OPTOELECTRONIC DEVICE COMPRISING A III-V SEMICONDUCTOR MEMBRANE LASER SOURCE FORMING A LATERAL P-I-N JUNCTION 审中-公开

公开(公告)号：US20230318263A1

公开(公告)日：2023-10-05

申请号：US18192270

申请日：2023-03-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Mattéo CHOBE , Karim HASSAN , Cécilia DUPRE

IPC分类号： H01S5/323 , H01S5/183 , H01S5/22 , H01S5/042 , H01S5/30

CPC分类号： H01S5/323 , H01S5/18302 , H01S5/2222 , H01S5/0425 , H01S5/305

摘要： An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.