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公开(公告)号：US20160118534A1
公开(公告)日：2016-04-28
申请号：US14984342
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/32 , H01L33/382 , H01L2224/14 , H01L2933/0016 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US20030013224A1
公开(公告)日：2003-01-16
申请号：US10094733
申请日：2002-03-08
Inventor： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
IPC: H01L021/00 , H01L021/28 , H01L021/3205 , H01L033/00
CPC classification number: B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
Abstract: A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (nullEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.
Abstract translation: 半导体激光器件包括形成在GaAs衬底上的谐振腔，所述谐振腔包括具有GaInNA（Sb）阱层和一对阻挡层的量子阱（QW）有源层结构。 QW结构具有等于或高于阱层与阻挡层之间的350毫伏电压（meV）的导带偏移能量（DELTAEc），并且每个阻挡层的拉伸应变等于或小于2.5 ％。
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公开(公告)号：US20190207059A1
公开(公告)日：2019-07-04
申请号：US16299362
申请日：2019-03-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US20170373222A1
公开(公告)日：2017-12-28
申请号：US15687606
申请日：2017-08-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC: H01L33/06 , H01S5/022 , H01L33/38 , H01L33/18 , H01L33/00 , H01S5/343 , H01L33/30 , H01S5/32 , H01S5/34
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US20160343901A1
公开(公告)日：2016-11-24
申请号：US15225382
申请日：2016-08-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
Abstract translation: 提供了包括包括多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。
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Patent Agency Ranking
公开(公告)号：US20140346441A1
公开(公告)日：2014-11-27
申请号：US14285738
申请日：2014-05-23
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska
CPC classification number: H01L33/06 , H01L33/18 , H01L33/30 , H01L2224/14 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
Abstract translation: 提供了包括包括多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。
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公开(公告)号：US09406840B2
公开(公告)日：2016-08-02
申请号：US14984342
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/32 , H01L33/382 , H01L2224/14 , H01L2933/0016 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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8.发明申请Ultraviolet Light Emitting AlGaN Composition And Ultraviolet Light Emitting Device Containing Same 有权紫外光发射AlGaN组成和含有它的紫外线发光装置公开(公告)号：US20100276710A1
公开(公告)日：2010-11-04
申请号：US12834409
申请日：2010-07-12
Applicant: Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
Inventor： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
CPC classification number: H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
Abstract translation: 提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区 能量小于周围材料。 此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。
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9.发明授权Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same 有权制造紫外线发光AlGaN组合物的方法和含有它的紫外线发射装置公开(公告)号：US07498182B1
公开(公告)日：2009-03-03
申请号：US11376452
申请日：2006-03-15
Applicant: Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , Paul Hongen Shen , Michael Wraback
Inventor： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , Paul Hongen Shen , Michael Wraback
CPC classification number: H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
Abstract translation: 提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区 能量小于周围材料。 此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。
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公开(公告)号：US06858863B2
公开(公告)日：2005-02-22
申请号：US10094733
申请日：2002-03-08
Applicant: Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
Inventor： Hitoshi Shimizu , Kouji Kumada , Norihiro Iwai
CPC classification number: B82Y20/00 , H01S5/18311 , H01S5/2068 , H01S5/3209 , H01S5/32366 , H01S5/32375 , H01S5/3403 , H01S5/34306 , H01S5/34353
Abstract: A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.
Abstract translation: 半导体激光器件包括形成在GaAs衬底上的谐振腔，所述谐振腔包括具有GaInNA（Sb）阱层和一对阻挡层的量子阱（QW）有源层结构。 QW结构具有等于或高于阱层与阻挡层之间的350毫伏电压（meV）的导带偏移能量（DeltaEc），并且每个阻挡层的拉伸应变等于或小于2.5 ％。
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