公开(公告)号：US20240120713A1

公开(公告)日：2024-04-11

申请号：US18223181

申请日：2023-07-18

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD

Inventor： Wang-Long ZHOU ,  Bien CHANN ,  Bryan LOCHMAN ,  Francisco VILLARREAL-SAUCEDO

IPC: H01S5/40 ,  B23K26/50 ,  H01S5/024 ,  H01S5/06 ,  H01S5/062 ,  H01S5/14

CPC classification number: H01S5/4012 ,  B23K26/50 ,  H01S5/02423 ,  H01S5/02453 ,  H01S5/0612 ,  H01S5/0622 ,  H01S5/143 ,  H01S5/4093 ,  H01S3/0812 ,  H01S5/4062 ,  H01S5/4068

Abstract: In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.

公开(公告)号：US11874495B2

公开(公告)日：2024-01-16

申请号：US17672847

申请日：2022-02-16

Applicant: EFFECT PHOTONICS B.V.

Inventor： Tim Koene ,  Niall Patrick Kelly

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  H01S5/40 ,  H01S5/14 ,  H01S5/042 ,  H01S5/10 ,  H01S5/323 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02B2006/12121 ,  H01S5/026 ,  H01S5/101 ,  H01S5/4068

Abstract: A monolithic InP-based PIC having a first photonic assembly that has a first optical splitter-combiner unit having a first end part that is optically connected with a first optical waveguide and a second end part that is optically connected with a first main photonic circuit and a first auxiliary photonic circuit. The first auxiliary photonic circuit has a first laser unit, and a first SOA. The first SOA is configurable to be in a first operational state in which the first SOA allows optical communication between the first laser unit and the first optical splitter-combiner unit, or a second operational state in which the first SOA prevents optical communication between the first laser unit and the first optical splitter-combiner unit. An opto-electronic system including the PIC.

公开(公告)号：US20180366901A1

公开(公告)日：2018-12-20

申请号：US15805717

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsik SHIM ,  Byunggil JEONG ,  Byounglyong CHOI

IPC: H01S5/026 ,  H01S5/343 ,  H01S5/22 ,  H01S5/024

CPC classification number: H01S5/026 ,  G02B6/42 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/02256 ,  H01S5/02453 ,  H01S5/1032 ,  H01S5/141 ,  H01S5/142 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4062 ,  H01S5/4068

Abstract: Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.

公开(公告)号：US20180331491A1

公开(公告)日：2018-11-15

申请号：US15934004

申请日：2018-03-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Yukihiro TSUJI

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/183

CPC classification number: H01S5/0042 ,  G02B6/12004 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/2086 ,  H01S5/3432 ,  H01S5/4068 ,  H01S2301/176 ,  H01S2304/02 ,  H01S2304/04

Abstract: A method of producing a semiconductor laser device includes the steps of preparing first and second substrate products each of which includes a substrate and a stacked semiconductor layer formed on the substrate, the first and second substrate products being different from each other; etching the first substrate product with a chlorine-based gas in a vacuum chamber by using a dry etching method; evacuating the vacuum chamber while monitoring a partial pressure of hydrogen chloride in the vacuum chamber so as to obtain the partial pressure of the hydrogen chloride within a predetermined range; after evacuating the vacuum chamber, introducing the second substrate product into the vacuum chamber while maintaining a vacuum state inside the vacuum chamber; and etching the second substrate product with a chlorine-based gas in the vacuum chamber by using the dry etching method.

公开(公告)号：US20180248334A1

公开(公告)日：2018-08-30

申请号：US15903555

申请日：2018-02-23

Applicant: Research Foundation of the City University of New York

Inventor： Muhammad Ali Ummy

IPC: H01S3/137 ,  H01S3/067 ,  H01S3/10 ,  H01S3/08

CPC classification number: H01S3/06791 ,  H01S3/06754 ,  H01S3/06758 ,  H01S3/06766 ,  H01S3/06787 ,  H01S3/08013 ,  H01S3/08027 ,  H01S3/08031 ,  H01S3/08036 ,  H01S3/08054 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/10007 ,  H01S3/1003 ,  H01S3/10061 ,  H01S3/137 ,  H01S5/021 ,  H01S5/142 ,  H01S5/4012 ,  H01S5/4062 ,  H01S5/4068 ,  H01S2301/02

Abstract: A dual output semiconductor optical amplifier-based tunable fiber laser is provided that can be switched from low to high power and vice versa. The laser system uses bidirectional semiconductor optical amplifier (SOA) for amplification and hence is able to introduce a unique feature of adjustable dual/single output ports.

公开(公告)号：US10014650B2

公开(公告)日：2018-07-03

申请号：US15439396

申请日：2017-02-22

Applicant: Peter Colin Reeves-Hall ,  Parviz Tayebati ,  Bryan Lochman ,  Bien Chann ,  Robin Huang

Inventor： Peter Colin Reeves-Hall ,  Parviz Tayebati ,  Bryan Lochman ,  Bien Chann ,  Robin Huang

IPC: H01S3/08 ,  H01S3/067 ,  H01S3/23

CPC classification number: H01S3/08009 ,  H01S3/067 ,  H01S3/0675 ,  H01S3/08086 ,  H01S3/23 ,  H01S5/02284 ,  H01S5/143 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/405 ,  H01S5/4056 ,  H01S5/4062 ,  H01S5/4068 ,  H01S5/4087

Abstract: In various embodiments, wavelength beam combining laser systems incorporate optical fibers and partially reflective output couplers or partially reflective interfaces or surfaces utilized to establish external lasing cavities.

公开(公告)号：US20180164500A1

公开(公告)日：2018-06-14

申请号：US15797871

申请日：2017-10-30

Applicant: Skorpios Technologies, Inc.

Inventor： Derek Van Orden ,  Amit Mizrahi ,  Timothy Creazzo ,  Stephen B. Krasulick

IPC: G02B6/125 ,  H01S5/40 ,  H01S3/08 ,  H01S3/063 ,  G02F1/01 ,  G02B6/26 ,  G02B6/293 ,  G02B6/12 ,  G02F1/225 ,  G02F1/21

CPC classification number: G02B6/125 ,  G02B6/12007 ,  G02B6/26 ,  G02B6/29337 ,  G02B6/29359 ,  G02B2006/12104 ,  G02B2006/1215 ,  G02F1/011 ,  G02F1/0147 ,  G02F1/225 ,  G02F2001/213 ,  H01S3/0637 ,  H01S3/08027 ,  H01S5/4068

Abstract: A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structures further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.

公开(公告)号：US09882354B2

公开(公告)日：2018-01-30

申请号：US15124778

申请日：2015-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yujin Zheng ,  Hirofumi Kan

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/42 ,  H01S5/024 ,  H01S5/14 ,  H01S5/10

CPC classification number: H01S5/4062 ,  H01S3/0804 ,  H01S3/08081 ,  H01S3/0815 ,  H01S5/02438 ,  H01S5/026 ,  H01S5/10 ,  H01S5/141 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4068 ,  H01S5/42

Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θS (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θS/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θS/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers.

公开(公告)号：US09843154B2

公开(公告)日：2017-12-12

申请号：US15071554

申请日：2016-03-16

Applicant: Parviz Tayebati ,  Bien Chann

Inventor： Parviz Tayebati ,  Bien Chann

IPC: H01S3/08 ,  H01S3/082 ,  H01S5/00 ,  H01S5/40 ,  G02B27/10 ,  H01S5/14 ,  H01S3/139 ,  H01S3/23

CPC classification number: H01S3/0826 ,  G02B27/1006 ,  H01S3/08 ,  H01S3/08054 ,  H01S3/139 ,  H01S3/2391 ,  H01S5/005 ,  H01S5/141 ,  H01S5/143 ,  H01S5/4012 ,  H01S5/4068 ,  H01S5/4087

Abstract: A system and method for stabilizing and combining multiple emitted beams into a single system using both WBC and WDM techniques.

公开(公告)号：US09837781B2

公开(公告)日：2017-12-05

申请号：US14714078

申请日：2015-05-15

Applicant: Oracle International Corporation

Inventor： Ashok V. Krishnamoorthy ,  Jin-Hyoung Lee ,  Xuezhe Zheng

IPC: H01S3/10 ,  H01S3/08 ,  H01S3/063 ,  H01S5/0683 ,  H01S5/026 ,  H01S3/13 ,  H01S5/02 ,  H01S5/40 ,  H01S5/065

CPC classification number: H01S3/0637 ,  H01S3/083 ,  H01S3/10 ,  H01S3/10007 ,  H01S3/10069 ,  H01S3/1301 ,  H01S5/005 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0612 ,  H01S5/06255 ,  H01S5/065 ,  H01S5/0653 ,  H01S5/0654 ,  H01S5/06804 ,  H01S5/06837 ,  H01S5/0687 ,  H01S5/10 ,  H01S5/141 ,  H01S5/142 ,  H01S5/4068 ,  H01S5/50

Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.