公开(公告)号：US10050413B2

公开(公告)日：2018-08-14

申请号：US15708531

申请日：2017-09-19

Applicant: LandMark Optoelectronics Corporation

Inventor： Shu-Wei Chiu ,  Yin-Jie Ma ,  Wei Lin

IPC: H01S5/16 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

CPC classification number: H01S5/3211 ,  H01S5/1014 ,  H01S5/162 ,  H01S5/164 ,  H01S5/2031 ,  H01S5/222 ,  H01S2301/185

Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

公开(公告)号：US20170149214A1

公开(公告)日：2017-05-25

申请号：US15426256

申请日：2017-02-07

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro TANIGUCHI

IPC: H01S5/30 ,  H01S5/042

CPC classification number: H01S5/162 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3209 ,  H01S5/4031

Abstract: A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.

公开(公告)号：US08660160B2

公开(公告)日：2014-02-25

申请号：US13658836

申请日：2012-10-24

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro Taniguchi ,  Kouhei Kinugawa

IPC: H01S5/00

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/34313

Abstract: A semiconductor laser element includes a substrate of a first conduction type and a layered semiconductor structure formed on the substrate. The layered semiconductor structure includes a first semiconductor layer of the first conduction type formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conduction type formed on the active layer, the second conduction type being opposite to the first conduction type. The first semiconductor layer, the active layer, and the second semiconductor layer include a non-window region through which a light emitted from the active layer passes and a window region surrounding the non-window region. Band gap energy of the active layer is larger in the window region than in the non-window region. The second semiconductor layer includes a current confinement layer.

Abstract translation: 半导体激光元件包括形成在基板上的第一导电型基板和层状半导体结构。 层状半导体结构包括在基板上形成的第一导电类型的第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二导电类型的第二半导体层，第二导电类型为 与第一导电类型相反。 第一半导体层，有源层和第二半导体层包括从有源层发射的光通过的非窗口区域和围绕非窗口区域的窗口区域。 活性层的带隙能量在窗口区域比在非窗口区域中更大。 第二半导体层包括电流限制层。

公开(公告)号：US08472495B2

公开(公告)日：2013-06-25

申请号：US13402245

申请日：2012-02-22

Applicant: Takashi Motoda

Inventor： Takashi Motoda

IPC: H01S5/00

CPC classification number: H01S5/1203 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/162 ,  H01S5/2072

Abstract: A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer and having a disordered portion spaced from an end face of a resonator of the laser device, an upper cladding layer located on the active layer, and a diffraction grating located in a portion of a layer lying above or below the active layer, with respect to the substrate. The disordered portion intersects a boundary between a diffraction grating section, in which the diffraction grating is located, and a bulk section, in which no diffraction grating is located.

Abstract translation: 激光装置包括基板，基板上的下包层，下包覆层上的有源层，具有与激光装置的谐振器的端面间隔开的无序部分，位于有源层上的上包层 以及位于相对于衬底的位于有源层上方或下方的层的部分中的衍射光栅。 无序部分与衍射光栅所在的衍射光栅部分和没有衍射光栅所在的主体部分之间的边界相交。

公开(公告)号：US20130044781A1

公开(公告)日：2013-02-21

申请号：US13658836

申请日：2012-10-24

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hidehiro TANIGUCHI ,  Kouhei KINUGAWA

IPC: H01S5/20 ,  H01L21/02

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/34313

Abstract: A semiconductor laser element includes a substrate of a first conduction type and a layered semiconductor structure formed on the substrate. The layered semiconductor structure includes a first semiconductor layer of the first conduction type formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conduction type formed on the active layer, the second conduction type being opposite to the first conduction type. The first semiconductor layer, the active layer, and the second semiconductor layer include a non-window region through which a light emitted from the active layer passes and a window region surrounding the non-window region. Band gap energy of the active layer is larger in the window region than in the non-window region. The second semiconductor layer includes a current confinement layer.

Abstract translation: 半导体激光元件包括形成在基板上的第一导电型基板和层状半导体结构。 层状半导体结构包括在基板上形成的第一导电类型的第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二导电类型的第二半导体层，第二导电类型为 与第一导电类型相反。 第一半导体层，有源层和第二半导体层包括从有源层发射的光通过的非窗口区域和围绕非窗口区域的窗口区域。 活性层的带隙能量在窗口区域比在非窗口区域中更大。 第二半导体层包括电流限制层。

公开(公告)号：US08270451B2

公开(公告)日：2012-09-18

申请号：US12956558

申请日：2010-11-30

Applicant: Wolfgang Schmid ,  Uwe D. Zeitner ,  Hans-Christoph Eckstein

Inventor： Wolfgang Schmid ,  Uwe D. Zeitner ,  Hans-Christoph Eckstein

IPC: H01S3/08

CPC classification number: H01S5/1082 ,  H01S5/0655 ,  H01S5/162 ,  H01S5/166 ,  H01S5/2036 ,  H01S5/2072 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/227 ,  H01S2301/18

Abstract: An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Abstract translation: 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域具有用于产生激光辐射的有源层。 有源层布置在第一波导层和第二波导层之间。 波导区域布置在第一包层和第二包层之间。 半导体本体具有主区域和至少一个相结构区域，其中形成有用于选择由有源层发射的激光辐射的横向模式的相位结构。 相结构区域布置在波导区域的外侧，或者由引入掺杂剂的区域或者混合结构体形成。

公开(公告)号：US20110122907A1

公开(公告)日：2011-05-26

申请号：US12956558

申请日：2010-11-30

Applicant: Wolfgang Schmid ,  Uwe D. Zeitner ,  Hans-Christoph Eckstein

Inventor： Wolfgang Schmid ,  Uwe D. Zeitner ,  Hans-Christoph Eckstein

IPC: H01S5/02

CPC classification number: H01S5/1082 ,  H01S5/0655 ,  H01S5/162 ,  H01S5/166 ,  H01S5/2036 ,  H01S5/2072 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/227 ,  H01S2301/18

Abstract: An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.

Abstract translation: 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域具有用于产生激光辐射的有源层。 有源层布置在第一波导层和第二波导层之间。 波导区域布置在第一包层和第二包层之间。 半导体本体具有主区域和至少一个相结构区域，其中形成有用于选择由有源层发射的激光辐射的横向模式的相位结构。 相结构区域布置在波导区域的外侧，或者由引入掺杂剂的区域或者混合结构体形成。

公开(公告)号：US07915633B2

公开(公告)日：2011-03-29

申请号：US12265161

申请日：2008-11-05

Applicant: Masahiro Ishida

Inventor： Masahiro Ishida

IPC: H01L33/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/028 ,  H01S5/162 ,  H01S5/2004 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/34333

Abstract: A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.

Abstract translation: 氮化物半导体器件包括：半导体衬底; 形成在半导体衬底上的由氮化物半导体制成并包含第一杂质的p型半导体层; 以及与p型半导体层接触并具有含有用于捕获氢的第二杂质的杂质区域的绝缘膜。 由于p型半导体层中的残留氢被捕获在杂质区域中，杂质区域中的氢浓度高于除了杂质区域之外的绝缘膜中的氢浓度。

公开(公告)号：US07885302B2

公开(公告)日：2011-02-08

申请号：US12072761

申请日：2008-02-27

Applicant: Franz Eberhard ,  Thomas Schlereth ,  Wolfgang Schmid

Inventor： Franz Eberhard ,  Thomas Schlereth ,  Wolfgang Schmid

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/20 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/162 ,  H01S5/2072 ,  H01S5/3414 ,  H01S5/343

Abstract: An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.

Abstract translation: 集成的锥形二极管激光装置包括喷射器区域（2）和与喷射器区域光学耦合并在横截面中膨胀的区域（3）。 所述区域（2,3）中的至少一个具有多个半导体材料的量子阱结构，其中半导体材料至少在一个区域（21,31）中混合。 混合区域（21,31）具有比非混合区域更大的电气带隙。

公开(公告)号：US07843982B2

公开(公告)日：2010-11-30

申请号：US11300861

申请日：2005-12-15

Applicant: Christopher L. Chua ,  Michael A. Kneissl ,  Noble M. Johnson ,  Peter Kiesel

Inventor： Christopher L. Chua ,  Michael A. Kneissl ,  Noble M. Johnson ,  Peter Kiesel

IPC: H01S5/028

CPC classification number: H01S5/162 ,  B82Y20/00 ,  G02B6/1228 ,  G02B6/305 ,  G02B6/4204 ,  G02B2006/1215 ,  H01L33/02 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0265 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/204 ,  H01S5/2072 ,  H01S5/22 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/4087

Abstract: A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

Abstract translation: 描述了避免由小平面加热引起的装置故障的方法。 该方法特别适用于半导体激光器。 在该方法中，包括GaAsN的半导体激光刻面被氢化，使得该刻面内的带隙大于InGaAsN激光器的有源区域中的带隙。 增加的带隙减小了小面上的光的吸收和结果的相关加热。