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    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240297261A1

    公开(公告)日：2024-09-05

    申请号：US18593512

    申请日：2024-03-01

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Hung-Wen HUANG ,  Yung-Chao CHEN ,  Yi-Hsiang WANG ,  Wei LIN

    IPC: H01L31/0216 ,  H01L31/0352

    CPC classification number: H01L31/02164 ,  H01L31/035263

    Abstract: A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.

    Non-diffusion type photodiode
    2.
    发明授权
    Non-diffusion type photodiode 有权

    公开(公告)号：US11699771B2

    公开(公告)日：2023-07-11

    申请号：US17356711

    申请日：2021-06-24

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Huang-wei Pan ,  Hung-Wen Huang ,  Yung-Chao Chen ,  Yi-Hsiang Wang

    IPC: H01L31/105 ,  H01L31/18 ,  H01L31/107 ,  H01L31/0352

    CPC classification number: H01L31/105 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/1804 ,  H01L31/184

    Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

    Semiconductor laser apparatus
    3.
    发明授权
    Semiconductor laser apparatus 有权

    公开(公告)号：US10050413B2

    公开(公告)日：2018-08-14

    申请号：US15708531

    申请日：2017-09-19

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Shu-Wei Chiu ,  Yin-Jie Ma ,  Wei Lin

    IPC: H01S5/16 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

    CPC classification number: H01S5/3211 ,  H01S5/1014 ,  H01S5/162 ,  H01S5/164 ,  H01S5/2031 ,  H01S5/222 ,  H01S2301/185

    Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

    LIGHT DETECTING DEVICE
    5.
    发明公开
    LIGHT DETECTING DEVICE 审中-公开

    公开(公告)号：US20240162356A1

    公开(公告)日：2024-05-16

    申请号：US18192430

    申请日：2023-03-29

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Hung-Wen HUANG ,  Yung-Chao CHEN ,  Yi-Hsiang WANG ,  Wei LIN

    IPC: H01L31/0392 ,  H01L31/0304 ,  H01L31/0352

    CPC classification number: H01L31/0392 ,  H01L31/03046 ,  H01L31/035236

    Abstract: A light detecting device includes a substrate that has a lattice constant. A buffer layer is disposed on the substrate. A gradient layer is formed on the buffer layer opposite to the substrate, and includes a plurality of sublayers that have respectively lattice constants each of which is greater than the lattice constant of the substrate. The sublayers are arranged in a manner that the lattice constants of the sublayers undergo a gradual increase in lattice constant in a direction away from the substrate. A barrier layer is formed on the gradient layer opposite to the buffer layer, and has a lattice constant which is greater than that of the substrate and no smaller than the lattice constants of the sublayers. An absorption layer is formed on the barrier layer opposite to the gradient layer.

    SEMICONDOCTOR LASER APPARATUS
    6.
    发明申请
    SEMICONDOCTOR LASER APPARATUS 审中-公开

    公开(公告)号：US20180166857A1

    公开(公告)日：2018-06-14

    申请号：US15708531

    申请日：2017-09-19

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Shu-Wei CHIU ,  Yin-Jie MA ,  Wei LIN

    IPC: H01S5/32 ,  H01S5/20 ,  H01S5/22

    CPC classification number: H01S5/3211 ,  H01S5/164 ,  H01S5/20 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/222 ,  H01S5/227 ,  H01S5/32

    Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

    NON-DIFFUSION TYPE PHOTODIODE
    8.
    发明申请
    NON-DIFFUSION TYPE PHOTODIODE 有权

    公开(公告)号：US20220336690A1

    公开(公告)日：2022-10-20

    申请号：US17356711

    申请日：2021-06-24

    Applicant: LandMark Optoelectronics Corporation

    Inventor： Huang-wei PAN ,  Hung-Wen HUANG ,  Yung-Chao CHEN ,  Yi-Hsiang WANG

    IPC: H01L31/105 ,  H01L31/18

    Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

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