公开(公告)号：US20180175587A1

公开(公告)日：2018-06-21

申请号：US15572478

申请日：2015-06-04

申请人： HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

发明人： Sagi Mathai ,  Michael Renne Ty Tan

IPC分类号： H01S5/068 ,  H01S5/183 ,  H01S5/42

CPC分类号： H01S5/4087 ,  H01L27/156 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3414 ,  H01S5/3432 ,  H01S5/423

摘要： An array of monolithic wavelength division multiplexing (WDM) vertical cavity surface emitting lasers (VCSELs) with spatially varying gain peak and Fabry Perot wavelength is provided. Each VCSEL includes a lower distributed Bragg reflector (DBR), a Fabry Perot tuning/current spreading layer, and a structure comprising a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) layer and an upper SCH layer. The structure is sandwiched between the DBR and the Fabry Perot tuning/current spreading layer. Each MQW experiences a different amount of quantum well intermixing and concomitantly a different wavelength shift. Each VCSEL further includes a top mirror on the Fabry Perot tuning/current spreading layer. A method is also provided for manufacturing the array.

公开(公告)号：US08559478B2

公开(公告)日：2013-10-15

申请号：US12355628

申请日：2009-01-16

申请人： Matthew N. Sysak ,  John E. Bowers ,  Alexander W. Fang ,  Hyundai Park

发明人： Matthew N. Sysak ,  John E. Bowers ,  Alexander W. Fang ,  Hyundai Park

IPC分类号： H01S5/026 ,  H01L27/14

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/06256 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1209 ,  H01S5/3414

摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

公开(公告)号：US08111729B2

公开(公告)日：2012-02-07

申请号：US12054771

申请日：2008-03-25

申请人： Matthew Sysak ,  Richard Jones

发明人： Matthew Sysak ,  Richard Jones

IPC分类号： H01S5/00

CPC分类号： H01S5/026 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/3414 ,  H01S5/3434 ,  H01S5/4087

摘要： A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within the III-V wafer; and bonding the silicon on insulator wafer with the III-V wafer.

摘要翻译： 混合硅激光器的多波长阵列和制造这种器件的方法。 该方法可以包括提供绝缘体上硅晶片; 在绝缘体上硅晶片上构图波导; 提供包括多层的III-V晶片; 应用量子阱混合以在III-V晶片内获得不同带隙的多个区域; 以及将绝缘体上的硅晶片与III-V晶片结合。

公开(公告)号：US20090245316A1

公开(公告)日：2009-10-01

申请号：US12054771

申请日：2008-03-25

申请人： Matthew Sysak ,  Richard Jones

发明人： Matthew Sysak ,  Richard Jones

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/026 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/12 ,  H01S5/3414 ,  H01S5/3434 ,  H01S5/4087

摘要： A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within the III-V wafer; and bonding the silicon on insulator wafer with the III-V wafer.

摘要翻译： 混合硅激光器的多波长阵列和制造这种器件的方法。 该方法可以包括提供绝缘体上硅晶片; 在绝缘体上硅晶片上构图波导; 提供包括多层的III-V晶片; 应用量子阱混合以在III-V晶片内获得不同带隙的多个区域; 以及将绝缘体上的硅晶片与III-V晶片结合。

公开(公告)号：US20060083272A1

公开(公告)日：2006-04-20

申请号：US11200729

申请日：2005-08-10

申请人： Du-Chang Heo ,  Jeong-Seok Lee ,  Seong-Taek Hwang

发明人： Du-Chang Heo ,  Jeong-Seok Lee ,  Seong-Taek Hwang

IPC分类号： H01S3/30

CPC分类号： B82Y20/00 ,  H01S5/1092 ,  H01S5/2072 ,  H01S5/34 ,  H01S5/3414 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2301/18

摘要： Disclosed are a broadband light source and a method of fabricating the same. The method includes the steps of forming a lower clad on a substrate, forming an active layer having a multiple well structure on the lower clad (so as to generate light having a broad wavelength band), sequentially depositing an upper clad and a cap on the active layer, depositing a cover layer including at least two regions having bandgaps different from each other on the cap, and heat-treating the broadband light source including the cover layer.

摘要翻译： 公开了一种宽带光源及其制造方法。 该方法包括以下步骤：在衬底上形成下包层，在下包层上形成具有多孔结构的有源层（以产生具有宽波长带的光），顺序地将上覆层和帽盖放置在 活性层，在盖上沉积包括至少两个具有彼此不同的带隙的区域的覆盖层，以及对包括覆盖层的宽带光源进行热处理。

公开(公告)号：US20060057748A1

公开(公告)日：2006-03-16

申请号：US10515198

申请日：2003-05-21

申请人： Stephen Najda ,  Stewart McDougall ,  Xuefeng Liu

发明人： Stephen Najda ,  Stewart McDougall ,  Xuefeng Liu

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/182 ,  H01L33/005 ,  H01S5/3414 ,  H01S5/343 ,  H01S5/34313

摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer, b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer, e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.

摘要翻译： 在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。 该方法包括：a）形成包括掺杂帽层的层状量子阱结构，b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定的蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）在器件结构上进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤，e）使用选择性反对的蚀刻过程在器件的至少接触区域中去除牺牲层 所述蚀刻停止层暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

公开(公告)号：US06989286B2

公开(公告)日：2006-01-24

申请号：US10466972

申请日：2002-01-23

申请人： Craig James Hamilton ,  Olek Peter Kowalski ,  John Haig Marsh ,  Stewart Duncan McDougall

发明人： Craig James Hamilton ,  Olek Peter Kowalski ,  John Haig Marsh ,  Stewart Duncan McDougall

IPC分类号： H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

摘要： There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substanially comprise “point” defects.

摘要翻译： 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件主体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入到器件本体的部分（53）中 邻近电介质层（51）的部分（5）。 结构缺陷本质上包含“点”缺陷。

公开(公告)号：US06760355B2

公开(公告)日：2004-07-06

申请号：US09916802

申请日：2001-07-27

申请人： John Haig Marsh ,  Craig James Hamilton

发明人： John Haig Marsh ,  Craig James Hamilton

IPC分类号： H01S534

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/1228 ,  H01S5/162 ,  H01S5/2036 ,  H01S5/3414

摘要： There is disclosed an improved semiconductor laser device (10). Previous high power (greater than a few hundred milliwatts output) semiconductor lasers suffer from a number of problems such as poor beam quality and low brightness. The invention therefore provides a semiconductor laser device (10) including at least one portion which has been Quantum Well Intermixed (QWI) and means for providing gain profiling within an active portion of the device (10). In a preferred implementation the device (10) provides a Wide Optical Waveguide (WOW).

摘要翻译： 公开了一种改进的半导体激光器件（10）。 以前的大功率（大于几百毫瓦输出）的半导体激光器受到诸如光束质量差和亮度低的诸多问题的困扰。 因此，本发明提供一种半导体激光装置（10），其包括已经是量子阱混合（QWI）的至少一部分和用于在装置（10）的有效部分内提供增益分布的装置。 在优选实施例中，设备（10）提供宽光波导（WOW）。

公开(公告)号：US20040106224A1

公开(公告)日：2004-06-03

申请号：US10466972

申请日：2003-12-12

发明人： Craig James Hamilton ,  Olek Peter Kowalski ,  John Haig Marsh ,  Stewart Duncan McDougall

IPC分类号： H01L021/00 ,  H01L021/302 ,  H01L021/461

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

摘要： There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise nullpointnull defects.

摘要翻译： 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件主体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入到器件本体的部分（53）中 邻近电介质层（51）的部分（5）。 结构缺陷基本上包括“点”缺陷。

公开(公告)号：US20040075098A1

公开(公告)日：2004-04-22

申请号：US10466971

申请日：2003-12-22

发明人： Craig James Hamilton

IPC分类号： H01L021/00

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

摘要： There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, ore the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input/output end (165); and an optically passive region (155, 160) extending from said input/output end (165, 170) of the optically active region (150) to an input/output end (175, 180) of the device (110).

摘要翻译： 公开了一种改进的光学器件（110），例如激光器，调制器，放大器，开关，等等。 本发明提供一种光学有源器件（110），包括：具有输入/输出端（165）的光学有源区（150）; 以及从所述光学有源区域（150）的所述输入/输出端（165,170）延伸到所述装置（110）的输入/输出端（175,180）的光学无源区域（155,160）。