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    Amplified spontaneous emission semiconductor source
    3.
    发明授权
    Amplified spontaneous emission semiconductor source 有权

    公开(公告)号：US11791437B2

    公开(公告)日：2023-10-17

    申请号：US16731193

    申请日：2019-12-31

    Applicant: EXALOS AG

    Inventor： Marcus Dülk ,  Nicolai Matuschek

    IPC: H01L33/00 ,  A61B1/06 ,  A61B5/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/60 ,  H01S5/50 ,  H04N9/31

    CPC classification number: H01L33/0045 ,  A61B1/0684 ,  A61B5/0066 ,  H01L33/10 ,  H01L33/32 ,  H01L33/60 ,  H01S5/50 ,  H04N9/315

    Abstract: An amplified spontaneous emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.

    PULSED RADIATION SOURCES FOR TRANSMISSION PYROMETRY
    4.
    发明申请
    PULSED RADIATION SOURCES FOR TRANSMISSION PYROMETRY 审中-公开

    公开(公告)号：US20180340835A1

    公开(公告)日：2018-11-29

    申请号：US15656662

    申请日：2017-07-21

    Applicant: Applied Materials, Inc.

    Inventor： Samuel C. HOWELLS

    IPC: G01J5/20 ,  G01J5/08 ,  H05B3/00 ,  H01L21/67

    CPC classification number: G01J5/20 ,  G01J5/0821 ,  G01J5/0896 ,  H01L21/67115 ,  H01L21/67248 ,  H01L33/0045 ,  H05B3/0047

    Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources, used to measure a broad range of low to high temperatures in the RTP chamber. In one example, two or more lasers, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, which measures temperatures below about 200° C., are used. In another example, two or more LEDs, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, are used. In yet another example, a broadband radiation source is used to emit pulses of radiation at least at 1,030 nm and 1,080 nm. These radiation sources are useful for detection of a broad range of low to high temperatures in the RTP chamber.

    Light source and optical coherence tomography apparatus using the same
    10.
    发明授权
    Light source and optical coherence tomography apparatus using the same 有权
    光源和使用其的光学相干断层摄影装置

    公开(公告)号：US09451672B2

    公开(公告)日：2016-09-20

    申请号：US14035747

    申请日：2013-09-24

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshimitsu Matsuu ,  Tatsuro Uchida ,  Takeshi Yoshioka ,  Takeshi Uchida ,  Yoshinobu Sekiguchi

    IPC: G01B9/02 ,  H05B37/02 ,  H01L33/00 ,  H01L27/15

    CPC classification number: H05B37/02 ,  G01B9/02007 ,  G01B9/02091 ,  H01L27/153 ,  H01L33/0045

    Abstract: A light source includes a control unit that controls currents injected into at least one light emitting region and a light emission spectrum conversion region. The at least one light emitting region includes a first light emitting region and a second light emitting region different from the first light emitting region, light that is emitted from the first light emitting region and passes through the light emission spectrum conversion region is combined with the light that is emitted from the first or second light emitting region and does not pass through the light emission spectrum conversion region. The control unit controls the currents injected into the light emission spectrum conversion region and the first light emitting region so that the current density of the light emission spectrum conversion region is smaller than the current density of the first light emitting region.

    Abstract translation: 光源包括控制喷射到至少一个发光区域和发光光谱转换区域中的电流的控制单元。 所述至少一个发光区域包括与第一发光区域不同的第一发光区域和第二发光区域，从第一发光区域发射并通过发光光谱转换区域的光与 从第一或第二发光区域发射并且不通过发光光谱转换区域的光。 控制单元控制注入发光光谱转换区域和第一发光区域的电流，使得发光光谱转换区域的电流密度小于第一发光区域的电流密度。

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