Wire bonding apparatus and method for manufacturing semiconductor device

    公开(公告)号:US12107070B2

    公开(公告)日:2024-10-01

    申请号:US17435696

    申请日:2020-07-15

    申请人: SHINKAWA LTD.

    IPC分类号: H01L23/00

    摘要: Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

    THIN FILM CAPACITOR
    3.
    发明公开
    THIN FILM CAPACITOR 审中-公开

    公开(公告)号:US20240290547A1

    公开(公告)日:2024-08-29

    申请号:US18588629

    申请日:2024-02-27

    申请人: TDK Corporation

    摘要: Disclosed herein is a thin film capacitor that includes a capacitor part having a lower electrode, an inner electrode, and a dielectric layer positioned between the lower electrode and the inner electrode, an insulating layer covering the capacitor part, a terminal electrode provided on the insulating layer, and a plurality of via holes penetrating the insulating layer so that the terminal electrode and the inner electrode of the capacitor part are connected to each other via the plurality of via holes. The terminal electrode includes a via region on which the plurality of via holes are arranged and having a ring-shaped, and a bonding region surrounded by the via region and having flat-shaped.