TUNABLE LASER ASSEMBLY AND METHOD OF CONTROL

    公开(公告)号:US20210281048A1

    公开(公告)日:2021-09-09

    申请号:US17195794

    申请日:2021-03-09

    摘要: A tunable laser assembly housed in a single enclosure and a method of control is described wherein the tunable laser, pump and semiconductor optical amplifier do not share a common optical axis but are all aligned to optical waveguides on an intervening planar lightwave circuit (PLC). Wavelength monitoring circuitry is included on the PLC to enable monitoring and control of the tunable laser center wavelength and optical bandwidth. The design of the PLC does not introduce perturbations into the swept-source laser output spectrum that would cause artifacts in imaging applications such as optical coherence tomography (OCT).

    MULTIWAVELENGTH QUANTUM CASCADE LASER VIA GROWTH OF DIFFERENT ACTIVE AND PASSIVE CORES
    9.
    发明申请
    MULTIWAVELENGTH QUANTUM CASCADE LASER VIA GROWTH OF DIFFERENT ACTIVE AND PASSIVE CORES 有权
    通过不同的有源和被动光纤的增长,多波长数量级激光器

    公开(公告)号:US20150263488A1

    公开(公告)日:2015-09-17

    申请号:US14725789

    申请日:2015-05-29

    摘要: Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.

    摘要翻译: 公开了一种形成能够产生中红外激光辐射的激光源的方法,包括在衬底上生长第一芯结构,在一个或多个位置蚀刻掉第一芯结构,并在衬底上生长第二芯结构。 核心结构中的至少一个包括以3-14μm范围内的频率发射的量子级联增益介质。 还公开了一种能够产生中红外激光辐射的激光源,其包括定位在衬底上的量子级联核心,用于在3-14μm的范围内发射,并且在基板上相对于第一核心定位在平面上的第二芯体 。 第二芯是a)无源波导芯b)第二量子级联核心和c)半导体活性核心区域。