Single-mode distributed feedback semiconductor lasers
    3.
    发明授权
    Single-mode distributed feedback semiconductor lasers 有权
    单模分布反馈半导体激光器

    公开(公告)号:US07593446B2

    公开(公告)日:2009-09-22

    申请号:US12117053

    申请日:2008-05-08

    IPC分类号: H01S5/00

    摘要: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.

    摘要翻译: 本发明涉及分布反馈半导体激光器领域。 更具体地,本发明使得可以使用简单和鲁棒的技术开发生产率接近100%的单模分布反馈激光器。 为此,本发明涉及通过限定有效区域的特定折射率分布,通过索引调制获得的DFB激光器的两种主要模式之一引入辐射损耗。

    Tunable laser
    4.
    发明申请
    Tunable laser 有权
    可调谐激光

    公开(公告)号:US20060209911A1

    公开(公告)日:2006-09-21

    申请号:US11235250

    申请日:2005-09-27

    IPC分类号: H01S3/10 H01S5/00

    摘要: A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffraction grating. A wavelength controlling region is configured such that the wavelength controlling waveguide portion and the wavelength controlling diffraction grating are included therein. A gain region is configured such that the gain waveguide portion and the gain diffraction grating are included therein. The Bragg wavelength of the wavelength controlling region is longer than that of the gain region in a state in which current injection or voltage application is not performed for the wavelength controlling waveguide portion.

    摘要翻译: 可调谐激光器包括交替地包括增益波导部分和波长控制波导部分的光波导和衍射光栅。 衍射光栅包括增益衍射光栅和波长控制衍射光栅。 波长控制区域被配置为使得波长控制波导部分和波长控制衍射光栅包括在其中。 增益区域被配置为使得增益波导部分和增益衍射光栅包括在其中。 在不对波长控制波导部分进行电流注入或施加电压的状态下,波长控制区域的布拉格波长比增益区域的布拉格波长长。

    Variable wavelength semiconductor laser and optical module
    6.
    发明授权
    Variable wavelength semiconductor laser and optical module 有权
    可变波长半导体激光器和光模块

    公开(公告)号:US06690688B2

    公开(公告)日:2004-02-10

    申请号:US10156638

    申请日:2002-05-29

    申请人: Mitsunobu Gotoda

    发明人: Mitsunobu Gotoda

    IPC分类号: H01S310

    摘要: A wavelength-tunable semiconductor laser includes a semiconductor substrate; an optical waveguide on an upper surface of the semiconductor substrate; a front light reflection area including an SG-DBR mirror with repeating pairs of a diffraction grating portion and a non-diffraction grating portion over plural periods; a rear light reflection area including an SSG-DBR mirror achieved with repeating portions in which the pitch of a diffraction grating pitch regularly varies from one end to the other end; an active region including an active layer between the front light reflection area and the rear light reflection area; and a phase control area between the front light reflection area and the rear light reflection area and including a phase control layer with a refractive index varied by current injection.

    摘要翻译: 波长可调谐半导体激光器包括半导体衬底; 在所述半导体衬底的上表面上的光波导; 前光反射区域,包括具有多个衍射光栅部分和非衍射光栅部分的多个周期的重复对的SG-DBR反射镜; 背光反射区域,包括通过重复部分实现的SSG-DBR镜,其中衍射光栅间距的间距从一端到另一端规则地变化; 包括在前光反射区域和后光反射区域之间的有源层的有源区域; 以及在前光反射区域和后光反射区域之间的相位控制区域,并且包括具有随电流注入而变化的折射率的相位控制层。

    Monitoring of optical radiation in semiconductor devices
    7.
    发明授权
    Monitoring of optical radiation in semiconductor devices 有权
    监测半导体器件中的光辐射

    公开(公告)号:US06556344B2

    公开(公告)日:2003-04-29

    申请号:US09767203

    申请日:2001-01-22

    申请人: Uzi Koren

    发明人: Uzi Koren

    IPC分类号: H04B1017

    摘要: An optical radiation monitor and an optical amplifier. The radiation monitor consists of an input port which receives the optical radiation, a waveguide, coupled to the input port so as to receive the optical radiation therefrom and adapted to leak a predetermined fraction of the optical radiation, and a photodetector which receives at least some of the leaked optical radiation and which generates a monitoring signal responsive thereto. The optical amplifier consists of an optical gain region which is adapted to output amplified optical radiation responsive to a current injected into the section. The amplifier includes a waveguide coupled to receive the amplified optical radiation and adapted to leak a predetermined fraction of the amplified optical radiation. The amplifier also includes a photodetector which receives at least some of the leaked optical radiation and which generates a monitoring signal responsive thereto, indicative of a performance characteristic of the optical gain region.

    摘要翻译: 光辐射监测器和光放大器。 辐射监测器由接收光辐射的输入端口,耦合到输入端口的波导管,以便从其接收光辐射并适于泄漏光辐射的预定部分;以及光电检测器,其接收至少一些 并产生响应于此的监测信号。光学放大器由光学增益区域组成,该光学增益区域适于响应于注入到该区段中的电流而输出放大的光辐射。 放大器包括耦合以接收放大的光辐射并适于泄漏放大的光辐射的预定分数的波导。 放大器还包括光电检测器,其接收泄漏的光辐射中的至少一些,并且响应于此产生监测信号,指示光增益区域的性能特性。

    Optical filters
    8.
    发明授权
    Optical filters 失效
    光滤波器

    公开(公告)号:US06198863B1

    公开(公告)日:2001-03-06

    申请号:US09051207

    申请日:1998-04-28

    IPC分类号: G02B634

    摘要: An optical filter is formed from at least two grating located in a waveguide region of a semiconductor optical device. Each grating has a multiple peak optical passband. The gratings are spaced apart in the waveguide region and form an optical cavity having a comb-filter characteristic. The gratings may be located in the active region of an optical gain element and in a preferred example are superstructure gratings (SSGs). A number of filters may be joined together in series.

    摘要翻译: 光学滤波器由位于半导体光学器件的波导区域中的至少两个光栅形成。 每个光栅具有多峰光学通带。 光栅在波导区域中间隔开并形成具有梳状滤波器特性的光学腔。 光栅可以位于光学增益元件的有源区域中,并且在优选的示例中是上部结构光栅(SSG)。 多个过滤器可以串联在一起。

    Broadband grating
    9.
    发明授权
    Broadband grating 失效
    宽带光栅

    公开(公告)号:US6081640A

    公开(公告)日:2000-06-27

    申请号:US875502

    申请日:1997-10-16

    摘要: An optical device incorporating a grating structure and method of producing same. The grating structure is composed of higher and lower refractive index regions which are positioned periodically with period P, wherein at least one of an amplitude, a phase, and a spatial frequency of the grating structure varies periodically with period L, and wherein at least one of the period L and the period P is chirped continuously over substantially the full extend of the grating structure.

    摘要翻译: PCT No.PCT / AU96 / 00048 Sec。 371日期:1997年10月16日 102(e)日期1997年10月16日PCT提交1996年2月1日PCT公布。 公开号WO96 / 24079 日期:1996年8月8日涉及光栅结构的光学装置及其制造方法。 光栅结构由与周期P周期性地定位的较高和较低折射率区域组成,其中光栅结构的振幅,相位和空间频率中的至少一个随着周期L周期性地变化,并且其中至少一个 的周期L和周期P在光栅结构的基本上全延伸上连续地啁啾。

    Distributed feed back laser with a grating structure adjusted for a
reduced intermodulation distortion in an analog amplitude modulation
and method for fabricating the same
    10.
    发明授权
    Distributed feed back laser with a grating structure adjusted for a reduced intermodulation distortion in an analog amplitude modulation and method for fabricating the same 失效
    分布式反馈激光器,其具有针对模拟幅度调制中的减少的互调失真而调整的光栅结构及其制造方法

    公开(公告)号:US5802096A

    公开(公告)日:1998-09-01

    申请号:US621946

    申请日:1996-03-25

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    IPC分类号: H01S5/12 H01S3/08 H01S3/19

    摘要: The present invention provides a grating structure partially provided in a semiconductor laser device having a first facet of a first reflectivity and a second facet of a second reflectivity which is larger than the first reflectivity. The grating structure extends within a half area near the first facet in the semiconductor laser device. The grating structure has a grating length in a cavity direction of not more than one third of a cavity length defined as a distance between the first and second facets. The grating structure has an integrated coupling coefficient value in the range of 0.4-0.6, the integrated coupling coefficient value is obtained by integrating coupling coefficient of the grating structure with positions in the cavity direction.

    摘要翻译: 本发明提供一种部分地设置在半导体激光装置中的光栅结构,其具有第一反射率的第一面和比第一反射率大的第二反射率的第二面。 光栅结构在半导体激光器件中的第一刻面附近的半个区域内延伸。 光栅结构具有在空腔方向上的不超过腔长度的三分之一的光栅长度,其被定义为第一和第二面之间的距离。 光栅结构具有在0.4-0.6范围内的积分耦合系数值,通过将光栅结构的耦合系数与空腔方向上的位置相结合获得积分耦合系数值。