摘要:
A wavelength selection filter, a wavelenth selection laser, and a tunable laser for suppressing adverse effects of non-selected light when selected light is obtained by the wavelength selection filter. A linear polarizer is arranged on a side of the wavelength selection filter from which incoming light enters, and a first faraday element and a second faraday element arranged at respective locations between the linear polarizer and the wavelength selection filter, and between the wavelength selection filter and a reflection mirror for reflecting light having passed through the wavelength selection filter. After incoming light passes through a linear polarizer, selected light passes through the wavelength selection filter and is reflected by the reflection mirror, while non-selected light is reflected by the wavelength selection filter. The selected light and the non-selected light differ in the number of times they pass through faraday elements before they return to the linear polarizer.
摘要:
A tapered waveguide is provided for connection between an input waveguide and a photodiode. The width of the tapered waveguide increases as it extends from the input end that is connected to the input waveguide towards the output end that is connected to the photodiode. The tapered waveguide has an optimum half spread angle to cause higher-order mode excitation when receiving optical signal from the input waveguide. The photodiode either has a constant width or increases in width as it extends away from the output end of the tapered waveguide, its half spread angle being equal to or less than the half spread angle of the tapered waveguide.
摘要:
A light receiving element includes a waveguide that includes a waveguide core, a multi-mode interference waveguide that has a width larger than a width of the waveguide, the multi-mode interference waveguide receiving a first light from the waveguide core at a first end, and a photodetection portion that includes a first semiconductor layer and an absorption layer disposed on the first semiconductor layer, the first semiconductor layer including at least one layer and receiving a second light from the multi-mode interference waveguide at a second end, the absorption layer being disposed above the first semiconductor layer and absorbing the second light. A distance from the first end of the multi-mode interference waveguide to the second end of the photodetection portion is longer than 70% of a first length and shorter than 100% of the first length, the first length being a length where self-imaging occurs in the multi-mode interference waveguide.
摘要:
An optical module including a first optical coupler; a second optical coupler; a first optical waveguide; a second optical waveguide; a first electrode provided on the first optical waveguide; a second electrode provided on the second optical waveguide; a short electrode shorter than the first and second electrodes and provided on the second optical waveguide; and a first high-frequency connector and a second high-frequency connector; wherein, the short electrode provided on the second optical waveguide is coupled to the second high-frequency connector; and the first electrode provided on the first optical waveguide is coupled to the first high-frequency connector.
摘要:
A semiconductor integrated device includes a plurality of wavelength tunable lasers, provided on a semiconductor substrate, and having oscillation wavelength ranges different from each other. Each of the wavelength tunable lasers includes an optical waveguide including, alternately in an optical axis direction, a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating provided over both the gain waveguide portion and the wavelength controlling waveguide portion. A value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in one of the plurality of wavelength tunable lasers is larger than a value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in a different one of the wavelength tunable lasers, which oscillates on a shorter wavelength side with respect to an oscillation wavelength range of the one wavelength tunable laser.
摘要:
A wavelength-selectable laser with a resonance region formed by two reflecting surfaces include a gain medium generating a laser beam, a first filter, and a second filter. The first filter has a first controllable transmission region and transmits a first predetermined wavelength region of the laser beam generated in the gain medium, the first predetermined wavelength region matching the first controllable transmission region. The second filter has a plurality of periodically arranged second transmission regions and transmits a second predetermined wavelength region of the laser beam transmitted by the first filter, the second predetermined wavelength region matching one of the second transmission regions.
摘要:
A semiconductor integrated device includes a plurality of wavelength tunable lasers, provided on a semiconductor substrate, and having oscillation wavelength ranges different from each other. Each of the wavelength tunable lasers includes an optical waveguide including, alternately in an optical axis direction, a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating provided over both the gain waveguide portion and the wavelength controlling waveguide portion. A value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in one of the plurality of wavelength tunable lasers is larger than a value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in a different one of the wavelength tunable lasers, which oscillates on a shorter wavelength side with respect to an oscillation wavelength range of the one wavelength tunable laser.
摘要:
In order to make it possible to suppress the influence of reflected light on a connection interface easily and with certainty, an optical waveguide device includes a first optical waveguide (1), a second optical waveguide (2) formed from a material or in a structure different from that of the first optical waveguide (1) and connected to the first optical waveguide (1), and a 1×1 multimode interference waveguide (3) formed by increasing the widths of the first optical waveguide (1) and the second optical waveguide (2) in the proximity of a connection interface between the first optical waveguide (1) and the second optical waveguide (2).
摘要:
A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffraction grating. A wavelength controlling region is configured such that the wavelength controlling waveguide portion and the wavelength controlling diffraction grating are included therein. A gain region is configured such that the gain waveguide portion and the gain diffraction grating are included therein. The Bragg wavelength of the wavelength controlling region is longer than that of the gain region in a state in which current injection or voltage application is not performed for the wavelength controlling waveguide portion.
摘要:
A wavelength tunable laser is constituted by including a resonator composed of a pair of reflectors arranged to face each other, and inside the resonator, a SOA radiating a laser beam with a gain for a wide range of wavelengths, a transmission-type wavelength tunable filter having an asymmetric filter characteristic, and a phase controller controlling a phase of the laser beam resonating inside the resonator.