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公开(公告)号：US20160336481A1
公开(公告)日：2016-11-17
申请号：US15209715
申请日：2016-07-13
发明人： John E. Northrup , Bowen Cheng , Christopher L. Chua , Thomas Wunderer , Noble M. Johnson , Zhihong Yang
IPC分类号： H01L33/06 , H01L33/00 , H01L33/14 , H01L33/32 , H01S5/343 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34 , B82Y20/00 , H01S5/042
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/14 , H01L33/32 , H01S5/0421 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/3404 , H01S5/34333
摘要： A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
摘要翻译： 发光器件包括具有由掺杂有p型掺杂剂的Al x Ga Ga x Ga x Ga x Ga N交替层和掺杂有p型掺杂剂的Al x O x Ga 1-x low N形成的短周期超晶格（SPSL）的p侧异质结构，其中xlow≤xhigh≤ 0.9。 SPSL的每个层具有小于或等于约六个双层AlGaN的厚度。
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公开(公告)号：US20160233375A1
公开(公告)日：2016-08-11
申请号：US15012502
申请日：2016-02-01
发明人： John E. Northrup , Christopher L. Chua , Michael A. Kneissl , Thomas Wunderer , Noble M. Johnson
CPC分类号： H01L33/0025 , H01L33/0075 , H01L33/04 , H01L33/32
摘要： Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≦λ≦400 nm, wherein b≦1.5.
摘要翻译： 描述了具有增强的极化度PD的发光器件和用于制造这种器件的方法。 发光器件可以包括配置为发射具有中心波长λ和极化度PD的光的发光区域，其中对于200nm≤λ≤400nm，其中PD>0.006λ-b，其中b≤ 1.5。
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公开(公告)号：US20150048397A1
公开(公告)日：2015-02-19
申请号：US13965985
申请日：2013-08-13
IPC分类号： H01L33/62
CPC分类号： H01L33/32 , H01L33/06 , H01L33/145 , H01L33/20 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole transport layer (TEBHTL). The composite electrical contact layer includes two materials. At least one of the two materials is a metal configured to reflect a portion of the emitted light. The TEBHTL is arranged between the composite electrical contact layer and the active region. The TEBHTL has a thickness that extends at least a majority of a distance between the active region and the composite electrical contact layer. The TEBHTL has a band-gap greater than a band-gap of light emitting portions of the active region. The band-gap of the TEBHTL decreases as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL.
摘要翻译： 发光二极管包括被配置为发光的有源区，复合电接触层和透明电子阻挡空穴传输层（TEBHTL）。 复合电接触层包括两种材料。 两种材料中的至少一种是被配置为反射发射光的一部分的金属。 TEBHTL布置在复合电接触层和有源区之间。 TEBHTL具有在有源区和复合电接触层之间延伸至少大部分距离的厚度。 TEBHTL具有大于有源区的发光部分的带隙的带隙。 在TEBHTL的大部分厚度上，TEBHTL的带隙随着从有源区到复合电接触层的距离的函数而减小。
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公开(公告)号：US09960355B2
公开(公告)日：2018-05-01
申请号：US14506139
申请日：2014-10-03
发明人： John E. Northrup
IPC分类号： H01L51/00
CPC分类号： H01L51/0036 , C08G2261/1412 , C08G2261/22 , C08G2261/222 , C08G2261/3223 , C08G2261/512 , C08L2205/025 , C08L65/00
摘要： An electronic device, including an organic semiconductor, the organic semiconductor having a first polymer having a first molecular weight and a first length, and a second polymer having a second molecular weight and a second length, wherein the second length is longer than the first length.
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公开(公告)号：US09882089B2
公开(公告)日：2018-01-30
申请号：US15234795
申请日：2016-08-11
IPC分类号： H01L33/00 , H01L33/06 , H01L33/62 , H01L33/32 , H01L33/14 , H01L33/42 , H01L33/20 , H01L33/38 , H01L33/40
CPC分类号： H01L33/32 , H01L33/06 , H01L33/145 , H01L33/20 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole transport layer (TEBHTL). The composite electrical contact layer includes tow materials. At least one of the two materials is a metal configured to reflect a portion of the emitted light. The TEBHTL is arranged between the composite electrical contact layer and the active region. The TEBHTL has a thickness that extends at least a majority of a distance between the active region and the composite electrical contact layer. The TEBHTL has a band-gap greater than a band-gap of light emitting portions of the active region. The band-gap of the TEBHTL decreases as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL.
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公开(公告)号：US10153616B2
公开(公告)日：2018-12-11
申请号：US15646716
申请日：2017-07-11
IPC分类号： H01S5/343 , H01S5/024 , H01S5/04 , H01S5/14 , H01S5/327 , B82Y20/00 , H01S5/30 , H01S5/32 , H01S5/183 , H01S3/109 , H01S5/022
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
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公开(公告)号：US10008629B2
公开(公告)日：2018-06-26
申请号：US15012502
申请日：2016-02-01
发明人： John E. Northrup , Christopher L. Chua , Michael A. Kneissl , Thomas Wunderer , Noble M. Johnson
CPC分类号： H01L33/0025 , H01L33/0075 , H01L33/04 , H01L33/32
摘要： Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≤λ≤400 nm, wherein b≤1.5.
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公开(公告)号：US20180158990A1
公开(公告)日：2018-06-07
申请号：US15882113
申请日：2018-01-29
IPC分类号： H01L33/32 , H01L33/62 , H01L33/42 , H01L33/40 , H01L33/38 , H01L33/14 , H01L33/06 , H01L33/20
CPC分类号： H01L33/32 , H01L33/06 , H01L33/145 , H01L33/20 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes an active region configured to emit light, a composite electrical contact layer, and a transparent electron blocking hole transport layer (TEBHTL). The composite electrical contact layer includes tow materials. At least one of the two materials is a metal configured to reflect a portion of the emitted light. The TEBHTL is arranged between the composite electrical contact layer and the active region. The TEBHTL has a thickness that extends at least a majority of a distance between the active region and the composite electrical contact layer. The TEBHTL has a band-gap greater than a band-gap of light emitting portions of the active region. The band-gap of the TEBHTL decreases as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL.
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公开(公告)号：US20160049771A1
公开(公告)日：2016-02-18
申请号：US14828207
申请日：2015-08-17
CPC分类号： H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/0222 , H01S5/02461 , H01S5/04 , H01S5/14 , H01S5/183 , H01S5/18358 , H01S5/18369 , H01S5/1838 , H01S5/18383 , H01S5/305 , H01S5/3086 , H01S5/3222 , H01S5/327 , H01S5/34333
摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.
摘要翻译： 垂直外腔表面发射激光器（VECSEL）结构包括异质结构和第一和第二反射器。 异质结构包括具有一个或多个量子阱结构的有源区域，其被配置为响应于电子束的泵浦而以波长λlase发射辐射。 可以掺杂一个或多个异质结构层。 有源区域设置在第一反射器和第二反射器之间，并且通过外部空腔与第一反射器间隔开。 电子束源被配置为产生朝向有源区域的电子束。 至少一个电触点电耦合到异质结构并且被配置为提供异质结构和地之间的电流路径。
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10.发明申请公开(公告)号：US20140154826A1
公开(公告)日：2014-06-05
申请号：US13691413
申请日：2012-11-30
发明人： Brent S. Krusor , John E. Northrup
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/16 , H01L33/44
摘要： A method of producing a semiconductor device can include receiving a Group III-N wafer as a substrate, initiating a first inversion domain boundary layer to form a thin etch stop layer, terminating the etch stop layer with a second inversion domain boundary layer, and subsequently continuing the active region growth.
摘要翻译： 制造半导体器件的方法可以包括接收第III-N晶片作为衬底，启动第一反型畴边界层以形成薄的蚀刻停止层，用第二反转畴边界层终止蚀刻停止层，随后 继续积极的地区增长。
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