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165 条记录 (耗时 0.031 秒)

    LIGHT SOURCE AND METHOD FOR CONTROLLING THE SAME
    1.
    发明申请
    LIGHT SOURCE AND METHOD FOR CONTROLLING THE SAME 审中-公开

    公开(公告)号：US20180138661A1

    公开(公告)日：2018-05-17

    申请号：US15801598

    申请日：2017-11-02

    申请人： Nanyang Technological University

    发明人： Guozhen Liang ,  Qijie Wang

    IPC分类号： H01S5/34 ,  H01S5/062

    CPC分类号： H01S5/3401 ,  G02F1/0136 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/0092 ,  H01S5/026 ,  H01S5/06236 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1021 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/3404 ,  H01S5/4087

    摘要： Embodiments provide a light source having a coherent light generator arrangement configured to generate at least one output light, and a waveguide arrangement optically coupled to the coherent light generator arrangement, the waveguide arrangement including at least one first resonator element and at least one second resonator element arranged in different orientations, wherein the waveguide arrangement is configured to interact with the at least one output light to cause the at least one first resonator element and the at least one second resonator element to emit respective first and second optical signals to co-operatively interact with each other to generate an output optical signal, and wherein the light source is configured to change a polarization characteristic of the output optical signal in response to at least one electrical signal applied to the light source to vary at least one of respective magnitudes of the first and second optical signals relative to each other.

    Semiconductor laser device and manufacturing method thereof
    3.
    发明授权
    Semiconductor laser device and manufacturing method thereof 有权
    半导体激光器件及其制造方法

    公开(公告)号：US08923355B2

    公开(公告)日：2014-12-30

    申请号：US14108165

    申请日：2013-12-16

    申请人： Rohm Co., Ltd.

    发明人： Yoshito Nishioka ,  Yoichi Mugino ,  Tsuguki Noma

    IPC分类号： H01S5/22 ,  H01S5/34 ,  B82Y20/00 ,  G11B5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/16

    CPC分类号： H01S5/3434 ,  B82Y20/00 ,  G11B2005/0021 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3404 ,  H01S5/34313 ,  H01S5/34326 ,  H01S2301/145 ,  H01S2301/173

    摘要： A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

    摘要翻译： 半导体激光器件包括n型覆盖层，第一p型覆盖层和脊条。 该器件还包括插入在n型覆盖层和第一p型覆盖层之间的有源层，以及形成在脊条的侧表面上的电流阻挡层。 该器件的脊条包括在与n型覆盖层相对的第一p型覆盖层的相对表面上形成为脊条形状的第二p型覆盖层。 形成脊条，使得第二p型覆盖层的表面的宽度的第一脊宽度与第一p型覆盖层位于同一侧，第二脊宽度作为第一p型覆盖层的表面宽度 第二p型覆盖层存在于与第一p型覆盖层相反的一侧。

    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
    6.
    发明授权
    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
    III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法

    公开(公告)号：US08420419B2

    公开(公告)日：2013-04-16

    申请号：US13404310

    申请日：2012-02-24

    申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    IPC分类号： H01L21/00

    CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

    摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

    摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。

    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    8.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
    III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法

    公开(公告)号：US20110299560A1

    公开(公告)日：2011-12-08

    申请号：US12837291

    申请日：2010-07-15

    申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

    IPC分类号： H01S5/10 ,  H01S5/323 ,  H01L33/32

    CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

    摘要： In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis.

    摘要翻译： 在制造III族氮化物半导体激光器件的方法中，形成衬底产品，并且衬底产品具有包括由六边形III族氮化物半导体制成并具有半极性主表面的衬底的激光结构，并且半导体 区域形成在半极性主表面上，然后刻划基板产品的第一表面以形成在六边形III族氮化物半导体的a轴方向上延伸的划线标记。 在形成刻划之后，通过在衬底产品的第二区域压制同时支撑衬底产品的第一区域但不支撑第二区域来进行衬底产品的分解。 该步骤导致形成另一衬底产品和激光棒。 基板产品通过预定的参考线分成两个，第一区域和第二区域，并且第一和第二区域彼此相邻。 激光棒具有从第一表面延伸到第二表面并且通过分解形成的第一和第二端面。 第一和第二端面形成III族氮化物半导体激光器件的激光腔。 基板的六边形III族氮化物半导体的c轴相对于向六边形III族氮化物半导体的m轴的法线轴线倾斜角度ALPHA。 第一和第二端面与由六边形III族氮化物半导体的m轴和法线轴定义的m-n平面相交。