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公开(公告)号：US10199795B2
公开(公告)日：2019-02-05
申请号：US15716085
申请日：2017-09-26
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US08908732B2
公开(公告)日：2014-12-09
申请号：US13896918
申请日：2013-05-17
发明人： Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura , Katsunori Yanashima , Hiroshi Nakajima
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3213 , H01S5/34333
摘要： A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.
摘要翻译： III族氮化物半导体激光器件包括：激光器结构，包括半导体区域和具有III族氮化物半导体的半极性主表面的支撑基底; 第一反射层，设置在该区域的第一面上，用于激光装置的激光腔; 以及设置在该区域的第二面上的用于激光腔的第二反射层。 激光器结构包括沿着半极性表面延伸的激光波导。 指示基座的<0001>轴向的c +轴向量相对于指示方向的矢量以不小于63度且小于80度的角度向III族氮化物半导体的m轴倾斜 垂直于半极性表面的轴。 第一反射层在525至545nm的波长范围内具有小于60％的反射率。
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3.发明授权Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法公开(公告)号：US08929416B2
公开(公告)日：2015-01-06
申请号：US14012364
申请日：2013-08-28
IPC分类号： H01S5/32 , H01S5/10 , B82Y20/00 , H01S5/02 , H01S5/343 , H01L33/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/34
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.
摘要翻译： 一种III族氮化物半导体激光器件，包括：激光器结构，包括支撑基底和半导体区域，所述支撑基底包括六边形III族氮化物半导体并具有半极性主表面，并且所述半导体区域设置在所述半极性主表面的半极性主表面上 支撑基地; 以及设置在所述激光器结构的半导体区域上的电极，所述半导体区域包括第一包层，第二包层和有源层。
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公开(公告)号：US20180019568A1
公开(公告)日：2018-01-18
申请号：US15716085
申请日：2017-09-26
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
CPC分类号： H01S5/022 , G02B6/00 , G02B6/4239 , G02B6/4251 , G02B6/4265 , H01S5/005 , H01S5/0071 , H01S5/02216 , H01S5/0222 , H01S5/02252 , H01S5/0226 , H01S5/02292 , H01S5/02415 , H01S5/02438 , H01S5/02476 , H01S5/4012 , H01S5/4093
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US09806494B2
公开(公告)日：2017-10-31
申请号：US15354699
申请日：2016-11-17
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
CPC分类号： H01S5/022 , G02B6/00 , G02B6/4239 , G02B6/4251 , G02B6/4265 , H01S5/005 , H01S5/02212 , H01S5/02216 , H01S5/0222 , H01S5/02252 , H01S5/0226 , H01S5/0228 , H01S5/02288 , H01S5/02292 , H01S5/02415 , H01S5/4012 , H01S5/4093
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US10333270B2
公开(公告)日：2019-06-25
申请号：US15716085
申请日：2017-09-26
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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公开(公告)号：US20170141531A1
公开(公告)日：2017-05-18
申请号：US15354699
申请日：2016-11-17
发明人： Takashi Kyono , Hideyuki Ijiri , Takao Nakamura , Hiromi Nakanishi , Takatoshi Ikegami , Kuniaki Ishihara , Yohei Enya , Tetsuya Kumano
CPC分类号： H01S5/022 , G02B6/00 , G02B6/4239 , G02B6/4251 , G02B6/4265 , H01S5/005 , H01S5/02212 , H01S5/02216 , H01S5/0222 , H01S5/02252 , H01S5/0226 , H01S5/0228 , H01S5/02288 , H01S5/02292 , H01S5/02415 , H01S5/4012 , H01S5/4093
摘要： An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.
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8.发明申请GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法公开(公告)号：US20140056324A1
公开(公告)日：2014-02-27
申请号：US14012364
申请日：2013-08-28
IPC分类号： H01S5/10
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.
摘要翻译： 一种III族氮化物半导体激光器件，包括：激光器结构，包括支撑基底和半导体区域，所述支撑基底包括六边形III族氮化物半导体并具有半极性主表面，并且所述半导体区域设置在所述半极性主表面的半极性主表面上 支撑基地; 以及设置在所述激光器结构的半导体区域上的电极，所述半导体区域包括第一包层，第二包层和有源层。
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