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公开(公告)号:US20190252851A1
公开(公告)日:2019-08-15
申请号:US16393547
申请日:2019-04-24
Applicant: NICHIA CORPORATION
Inventor: Shingo TANISAKA
CPC classification number: H01S5/02252 , G02B19/0052 , H01L21/67075 , H01S3/08059 , H01S5/0071 , H01S5/0201 , H01S5/0203 , H01S5/0206 , H01S5/02212 , H01S5/02296 , H01S5/2081 , H01S5/2201
Abstract: A semiconductor laser device includes a mounting board, a semiconductor laser element provided on the mounting board, and an optical member. The optical member is made of silicon having a first {110} plane, a first {100} plane that is adjacent to the first {110} plane, a second {110} plane, and a second {100} plane that is adjacent to the second {110} plane, with the second {100} plane being fixed on the mounting board, and the first {110} plane being covered by a reflective film to reflect laser light emitted from the semiconductor laser element.
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公开(公告)号:US20190252850A1
公开(公告)日:2019-08-15
申请号:US16314782
申请日:2017-06-30
Applicant: Cobolt AB
Inventor: Gunnar ELGCRONA , Magnus RÅDMARK , Håkan KARLSSON
CPC classification number: H01S5/02252 , G02B19/0057 , G02B23/00 , G02B27/1006 , G02B27/1073 , H01S3/2375 , H01S5/005 , H01S5/0071 , H01S5/4012 , H01S5/4075 , H01S5/4087
Abstract: A multi-wavelength laser module including a base plate, a plurality of radiation sources mounted on the base plate, at least one telescope including a first lens and a second lens wherein the second lens is arranged at a distance from the first lens along a radiation beam path, thereby creating a telescopic effect. A beam angle correction plate is arranged between the first lens and the second lens in the radiation beam path, the beam angle correction plate being angled in relation to the radiation beam path so as to parallel shift the radiation beam inside the telescope and thereby adjust the pointing direction of the radiation beam after passage of the telescope. Further, a method for assembling a multi-wavelength laser system provided with telescopes with such beam angle correction plate.
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公开(公告)号:US20190186700A1
公开(公告)日:2019-06-20
申请号:US16281912
申请日:2019-02-21
Applicant: Soraa Laser Diode, Inc.
Inventor: Eric Goutain , James W. Raring , Paul Rudy , Hua Huang
IPC: F21K9/60 , G02B6/27 , F21V9/30 , F21K9/62 , B82Y20/00 , H01S5/00 , H01S5/022 , H01S5/024 , H01S5/22 , H01S5/343 , H01S5/40 , G02B6/42 , H01S5/323 , G02B6/26 , F21V29/71 , F21V29/83 , F21V23/06 , F21V8/00 , F21K9/64
CPC classification number: F21K9/60 , B82Y20/00 , F21K9/62 , F21K9/64 , F21V9/30 , F21V23/06 , F21V29/713 , F21V29/83 , F21Y2101/00 , F21Y2115/10 , F21Y2115/30 , G02B6/0005 , G02B6/26 , G02B6/27 , G02B6/4214 , G02B6/4249 , H01L2224/45124 , H01L2224/48091 , H01L2924/00014 , H01S5/0021 , H01S5/005 , H01S5/0085 , H01S5/0092 , H01S5/02208 , H01S5/02224 , H01S5/02236 , H01S5/02252 , H01S5/02276 , H01S5/02284 , H01S5/02292 , H01S5/02469 , H01S5/02476 , H01S5/0287 , H01S5/0425 , H01S5/2201 , H01S5/32341 , H01S5/3235 , H01S5/34333 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H01S5/4056 , H01S2301/14 , H01S2304/04
Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.
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公开(公告)号:US20190103723A1
公开(公告)日:2019-04-04
申请号:US16141542
申请日:2018-09-25
Applicant: NICHIA CORPORATION
Inventor: Soichiro MIURA , Kazuma KOZURU
CPC classification number: H01S5/4081 , H01S5/0071 , H01S5/02216 , H01S5/0222 , H01S5/02252 , H01S5/0228 , H01S5/02288 , H01S5/02292 , H01S5/02296 , H01S5/02469 , H01S5/32308 , H01S5/32325 , H01S5/32341 , H01S5/40 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/4093
Abstract: A light emitting device includes first and second semiconductor laser elements and a collimate lens. The first semiconductor laser element irradiates a first light having a first peak wavelength in a visible range. The second semiconductor laser element, irradiates a second light having a second peak wavelength in the visible range, which is different from the first peak wavelength. The collimate lens is arranged on paths of the first and second lights. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes. The second lens portion is connected to the first lens portion, and the first and second lens portions are different from each other in at least one of a shape of a light incident surface, a shape of a light extracting surface, and a height.
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公开(公告)号:US20190081455A1
公开(公告)日:2019-03-14
申请号:US15729380
申请日:2017-10-10
Applicant: TRUELIGHT CORPORATION
Inventor: TZU-CHING YEH , YU-FU WU , CHENG-TA CHEN
IPC: H01S5/0683 , H01S5/183 , H01S5/022
CPC classification number: H01S5/0683 , H01S5/0071 , H01S5/02212 , H01S5/02248 , H01S5/02252 , H01S5/02292 , H01S5/02296 , H01S5/183
Abstract: A packaging assembly for a high-speed vertical-cavity surface-emitting laser (VCSEL) mainly applies a lens assembly consisted of several prisms to split a laser beam emitted by a VCSEL element so as to guide a small portion of the laser beam back to a monitor photodiode (MPD) and the rest of the laser beam to travel away along an optical axis. Such a spectacular design of the lens assembly can not only relieve the VCSEL element from a position right under the optical axis, but can also reduce signal loss by shorting a length of a bonding wire for a corresponding pin through disposing the VCSEL element further close to the corresponding pin. Thereupon, a defect of lights reflected from a lens or a translucent plate on a cap can be substantially improved.
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公开(公告)号:US20180269659A1
公开(公告)日:2018-09-20
申请号:US15762003
申请日:2016-09-29
Inventor: Hiroyuki Ishii , Naoki Fujiwara , Kei Watanabe , Mikitaka Itoh , Keisuke Kasai , Masataka Nakazawa
IPC: H01S5/40 , H01S5/02 , H01S5/022 , H01S5/50 , H01S5/125 , H01S5/12 , H01S5/14 , H01S5/0683 , H01S5/30
CPC classification number: H01S5/4087 , G01N21/01 , G02B6/12 , G02B6/42 , H01S5/0206 , H01S5/02252 , H01S5/02284 , H01S5/02288 , H01S5/02415 , H01S5/02492 , H01S5/026 , H01S5/0287 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/06835 , H01S5/101 , H01S5/1039 , H01S5/12 , H01S5/125 , H01S5/14 , H01S5/227 , H01S5/3013 , H01S5/4006 , H01S5/4062 , H01S5/4068 , H01S5/50
Abstract: A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiO2 glass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.
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公开(公告)号:US20180269649A1
公开(公告)日:2018-09-20
申请号:US15979694
申请日:2018-05-15
Applicant: Vixar Inc.
Inventor: William Hogan , Mary Brenner
CPC classification number: H01S5/0228 , H01L33/483 , H01L2224/48091 , H01S5/0042 , H01S5/005 , H01S5/02208 , H01S5/02236 , H01S5/02252 , H01S5/02272 , H01S5/02296 , H01S5/183 , H01S5/423 , Y10T156/10 , Y10T156/1052 , H01L2924/00014
Abstract: An optical package having a patterned submount, an optoelectronic device mounted to the patterned submount, a spacer affixed on one side to the patterned submount, the spacer having a bore hole therethrough wherein the optoelectronic device is positioned, and an optical element affixed to the spacer on a side opposite the patterned submount and covering the spacer bore hole. The patterned submount may be a circuit board. The optoelectronic device may be a VCSEL. The spacer may be affixed to the circuit board, for example, using an epoxy preform or an adhesive laminate. The spacer may, for example, be manufactured from a sheet of stainless steel or from a circuit board. The optical element may be, for example, a diffuser, a concave lens, a convex lens, a holographic element, polarizers, or diffraction gratings. The optical element may be affixed to the spacer using an epoxy preform or an adhesive laminate.
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公开(公告)号:US20180180827A1
公开(公告)日:2018-06-28
申请号:US15832795
申请日:2017-12-06
Applicant: Renesas Electronics Corporation
Inventor: Tetsuya IIDA , Yasutaka Nakashiba
CPC classification number: G02B6/4239 , G02B6/12004 , G02B6/13 , G02B6/30 , G02B6/4204 , G02B6/4232 , G02B2006/12061 , G02B2006/12121 , G02B2006/12123 , H01S5/005 , H01S5/021 , H01S5/02228 , H01S5/0224 , H01S5/02252 , H01S5/02272 , H01S5/02276 , H01S5/02284 , H01S5/024 , H01S5/0425
Abstract: A Si photonics device includes: a first semiconductor chip; a second semiconductor chip having a laser diode and mounted on the first semiconductor chip; a third semiconductor chip taking in a laser beam emitted from the laser diode and mounted on the first semiconductor chip; and a resin layer disposed on the first semiconductor chip so as to face the second semiconductor chip. Further, the Si photonics device has: a bump electrode connecting the second semiconductor chip and an upper layer electrode pad provided on the resin layer of the first semiconductor chip; and a bump electrode connecting the first semiconductor chip and the third semiconductor chip, and the second semiconductor chip is mounted on the first semiconductor chip via the resin layer.
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公开(公告)号:US20180131156A1
公开(公告)日:2018-05-10
申请号:US15865761
申请日:2018-01-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masashi Yanagase , Keiji Iwata
IPC: H01S5/042 , H01S5/02 , H01S5/022 , G02B6/42 , H01L31/0203 , H01L31/02 , H01L31/0232 , H01L31/0304 , H01L25/16 , H01L29/866 , H01L27/02
CPC classification number: H01S5/0425 , G02B6/4202 , G02B6/4232 , G02B6/4239 , G02B6/4242 , H01L25/167 , H01L27/0248 , H01L29/866 , H01L31/02005 , H01L31/0203 , H01L31/022416 , H01L31/02325 , H01L31/0304 , H01S5/0206 , H01S5/02208 , H01S5/02252 , H01S5/02276 , H01S5/02284 , H01S5/183
Abstract: A surface emitting element including a semiconductor substrate and a casing. The substrate includes an optical element having a photoelectric conversion function. First and second terminal electrodes are disposed on the substrate. The casing has a depression for accommodating the substrate. Moreover, first and second connection electrodes are formed in the casing. The first and second terminal electrodes are formed so as to protrude from the side surfaces of the substrate. The first and second connection electrodes are formed so as to protrude toward the depression side in the casing. The first terminal electrode and the first connection electrode are in contact with each other, and the second terminal electrode and the second connection electrode are in contact with each other.
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公开(公告)号:US09966729B2
公开(公告)日:2018-05-08
申请号:US14475914
申请日:2014-09-03
Applicant: Mitsubishi Electric Corporation
Inventor: Mitoru Yabe
CPC classification number: H01S5/02252 , H01S5/02208 , H01S5/02248 , H01S5/02256 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/02284 , H01S5/02288 , H01S5/02469 , H01S5/02476 , H01S5/4012 , H01S5/4031 , H01S5/4043 , H01S5/405
Abstract: A laser light source module includes: a plate-shaped stem; a power supply lead pin having an upper end protruding from an upper surface being one of main surfaces of the stem and a lower end penetrating to extend toward a lower surface side, the lower surface being the other of the main surface of the stem; a block fixed to the upper surface of the stem; a submount substrate that is fixed to a surface of the block and includes the semiconductor laser array mounted thereon, the surface being parallel to the upper surface of the stem; the semiconductor laser array located on the submount substrate such that a light emitting direction is parallel to the upper surface of the stem; and a collimator lens array that is located on a front surface of the semiconductor laser array and converts an output light beam of the semiconductor laser array into a parallel light beam.
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