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    VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER
    1.
    发明申请
    VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER 审中-公开

    公开(公告)号：US20190252861A1

    公开(公告)日：2019-08-15

    申请号：US16392780

    申请日：2019-04-24

    申请人： ElectroPhotonic-IC Inc.

    发明人： Christopher Watson ,  Kirill Pimenov ,  Valery Tolstikhin ,  Fang Wu ,  Yury Logvin

    IPC分类号： H01S5/223 ,  H01S5/22 ,  H01S5/12

    CPC分类号： H01S5/2232 ,  H01S5/0208 ,  H01S5/0422 ,  H01S5/1231 ,  H01S5/2018 ,  H01S5/2081 ,  H01S5/22

    摘要： A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

    Method for manufacturing semiconductor device, and semiconductor device
    7.
    发明授权
    Method for manufacturing semiconductor device, and semiconductor device 有权

    公开(公告)号：US09705286B2

    公开(公告)日：2017-07-11

    申请号：US15047774

    申请日：2016-02-19

    申请人： NICHIA CORPORATION

    发明人： Susumu Harada

    IPC分类号： H01S5/22 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/343

    CPC分类号： H01S5/22 ,  H01S5/1017 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/2214 ,  H01S5/34333

    摘要： With a method for manufacturing a semiconductor device, a semiconductor layer having a protrusion on a main face is formed. The protrusion includes an upper face and side faces. A conductive layer on a region that includes at least the upper face and the side faces of the protrusion is formed. A first mask that partially covers a surface of the conductive layer is formed. A part of the conductive layer is etched by using the first mask in a first etching process. A second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process is formed. A part of the conductive layer is etched by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process.

    METHOD FOR MANUFACTURING AN OPTICAL MEMBER, METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING AN OPTICAL MEMBER, METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE 审中-公开
    用于制造光学部件的方法，制造半导体激光器件和半导体激光器件的方法

    公开(公告)号：US20170063034A1

    公开(公告)日：2017-03-02

    申请号：US15242966

    申请日：2016-08-22

    申请人： NICHIA CORPORATION

    发明人： Shingo TANISAKA

    IPC分类号： H01S5/022

    CPC分类号： H01S5/02252 ,  G02B19/0052 ,  H01L21/67075 ,  H01S3/08059 ,  H01S5/0071 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/0206 ,  H01S5/02212 ,  H01S5/02296 ,  H01S5/2081 ,  H01S5/2201

    摘要： A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane and a second main surface of a {110} plane that are parallel to each other, forming mask patterns on the first main surface and the second main surface, each of the mask patterns having an opening extending in one direction, so that the opening on a first main surface side and the opening on a second main surface side are disposed alternately, or so that the opening on the second main surface side are disposed directly under the opening on the first main surface side, forming recesses having sloped surfaces in the first main surface side and the second main surface side by wet etching the silicon substrate using the mask patterns as masks, and forming a reflective film on the first main surface or the second main surface.

    摘要翻译： 一种制造光学部件的方法包括提供具有彼此平行的{110}面和{110}面的第二主表面的第一主表面和在第一主表面上形成掩模图案的硅基板， 第二主表面，每个掩模图案具有沿一个方向延伸的开口，使得第一主表面侧上的开口和第二主表面侧上的开口交替设置，或者使得第二主表面上的开口 表面侧直接配置在第一主面侧的开口的正下方，通过使用掩模图案作为掩模对硅基板进行湿式蚀刻，形成在第一主表面侧和第二主表面侧具有倾斜表面的凹部，并且形成反射膜 在第一主表面或第二主表面上。