-
1.发明申请Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body 审中-公开制造薄膜半导体体和薄膜半导体体的方法公开(公告)号：US20160049550A1
公开(公告)日：2016-02-18
申请号：US14927325
申请日：2015-10-29
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.
摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体的辐射出射面上的突起。
-
公开(公告)号：US20180048122A1
公开(公告)日：2018-02-15
申请号：US15550888
申请日：2016-02-18
CPC分类号： H01S5/2086 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/22 , H01S2301/176
摘要： A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
-
公开(公告)号：US09972748B2
公开(公告)日：2018-05-15
申请号：US14927325
申请日：2015-10-29
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.
-
公开(公告)号：US20170302058A1
公开(公告)日：2017-10-19
申请号：US15517144
申请日：2015-09-21
发明人： Christian Rumbolz , Sven Gerhard
CPC分类号： H01S5/2081 , H01L21/76232 , H01S5/0224 , H01S5/22 , H01S5/2202
摘要： A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.
-
公开(公告)号：US10312664B2
公开(公告)日：2019-06-04
申请号：US15517144
申请日：2015-09-21
发明人： Christian Rumbolz , Sven Gerhard
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01L21/762 , H01S5/022
摘要： A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.
-
公开(公告)号：US10290997B2
公开(公告)日：2019-05-14
申请号：US15550888
申请日：2016-02-18
摘要： A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.
-
公开(公告)号：US20190052055A1
公开(公告)日：2019-02-14
申请号：US16101147
申请日：2018-08-10
摘要： A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.014 秒)
