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公开(公告)号：US11171258B2
公开(公告)日：2021-11-09
申请号：US16493438
申请日：2018-05-03
发明人： Christian Leirer , Isabel Otto
摘要： A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.
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公开(公告)号：US20200152568A1
公开(公告)日：2020-05-14
申请号：US16615839
申请日：2018-05-17
发明人： Isabel Otto , Dominik Scholz , Christian Leirer
IPC分类号： H01L23/528 , H01L23/532
摘要： A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.
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公开(公告)号：US10475951B2
公开(公告)日：2019-11-12
申请号：US14780982
申请日：2014-03-28
发明人： Andreas Löffler , Tobias Meyer , Adam Bauer , Christian Leirer
IPC分类号： H01L33/00 , H01L33/02 , H01L33/24 , H01L21/02 , H01L33/06 , H01L33/30 , H01L25/16 , H01L33/32
摘要： A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.
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公开(公告)号：US20180204876A1
公开(公告)日：2018-07-19
申请号：US15743578
申请日：2016-07-12
CPC分类号： H01L27/15 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/382 , H01L33/54 , H01L33/62 , H01L2933/005 , H01L2933/0066
摘要： A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.
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公开(公告)号：US09728674B2
公开(公告)日：2017-08-08
申请号：US15285447
申请日：2016-10-04
发明人： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
摘要： The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
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公开(公告)号：US09620673B2
公开(公告)日：2017-04-11
申请号：US14782911
申请日：2014-03-24
发明人： Tobias Meyer , Christian Leirer , Lorenzo Zini , Jürgen Off , Andreas Löffler , Adam Bauer
CPC分类号： H01L33/025 , H01L27/15 , H01L33/0008 , H01L33/005 , H01L33/14 , H01L33/382
摘要： An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.
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公开(公告)号：US11195981B2
公开(公告)日：2021-12-07
申请号：US16607226
申请日：2018-05-08
摘要： A method of manufacturing semiconductor device includes providing a radiation emitting semiconductor chip having a first main surface, applying a metallic seed layer to a second main surface opposite the first main surface, galvanically depositing first and second metallic volume regions on the seed layer, depositing an adhesion promoting layer on the volume regions, and applying a casting compound at least between contact points, wherein before the metallic volume regions are galvanically deposited, a dielectric layer is first applied to the seed layer over its entire surface and openings are produced in the dielectric layer by etching, and a material of the metallic volume regions is deposited through the openings of the dielectric layer, wherein the dielectric layer is underetched at boundaries to the openings and the underetches are filled with material of the metallic volume regions during the galvanical depositing of the metallic volume regions.
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8.发明授权公开(公告)号：US11107944B2
公开(公告)日：2021-08-31
申请号：US16491483
申请日：2018-03-21
发明人： Isabel Otto , Christian Leirer
IPC分类号： H01L31/18 , H01L31/0232 , H01L33/00 , H01L33/40 , H01L33/60
摘要： A method of manufacturing an optoelectronic semiconductor chip includes a) providing a semiconductor layer sequence having an active region that generates or receives radiation on a substrate; b) forming at least one recess extending through the active region; c) forming a metallic reinforcement layer on the semiconductor layer sequence by galvanic deposition, the metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess; and d) removing the substrate, wherein the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence.
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公开(公告)号：US11069842B2
公开(公告)日：2021-07-20
申请号：US16498331
申请日：2018-04-03
发明人： Isabel Otto , Christian Leirer
摘要： A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment a method include providing a semiconductor layer sequence having an active region and a plurality of emission regions, forming a plurality of first contact points, filling spacings between the first contact points with a molding compound, removing a growth substrate of the semiconductor layer sequence and arranging the semiconductor layer sequence on a connection carrier comprising a control circuit and a plurality of connection surfaces, wherein each of the first contact points is electrically conductively connected to a connection surface, wherein the emission regions are independently controllable by the control circuit, and wherein the molding compound serves as a temporary auxiliary carrier that mechanically stabilizes the semiconductor layer sequence during the removal of the growth substrate.
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公开(公告)号：US10985306B2
公开(公告)日：2021-04-20
申请号：US15750565
申请日：2016-07-22
IPC分类号： H01L33/64 , H01L33/48 , H01L33/60 , H01L33/38 , H01L33/62 , H01L31/105 , H01L31/02 , H01L31/0232 , H01L31/024 , H01L33/20 , H01L33/10 , H01L31/0216 , H01L31/0224 , H01L33/44
摘要： A semiconductor chip includes an electrically insulating layer including a first opening and a second opening, an electrically conductive first connection point, and an electrically conductive second connection point, wherein a carrier mechanically connects to a semiconductor body, the active region electrically connects to a first conductor body and a second conductor body, the electrically insulating layer covers the carrier on a side thereof facing away from the semiconductor body, the first connection point electrically connects to the first conductor body through the first opening, the second connection point electrically connects to the second conductor body through the second opening, the first conductor body is at a first distance from a second conductor body, the first connection point is at a second distance from the second connection point, and the first distance is less than the second distance.
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