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公开(公告)号：US09502611B2
公开(公告)日：2016-11-22
申请号：US14430198
申请日：2013-09-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
Abstract translation: 本发明涉及包含具有光活性层的层结构的光电子部件。 在第一横向区域中，光活性层具有比在第二横向区域中更高的V缺陷密度。
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公开(公告)号：US10396106B2
公开(公告)日：2019-08-27
申请号：US15594482
申请日：2017-05-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
IPC: H01L27/12 , H01L21/02 , H01L21/20 , H01L21/762 , H01L21/268 , H01L21/3105 , H01L21/324 , H01S5/22 , H01S5/223 , H01S5/20
Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US10388829B2
公开(公告)日：2019-08-20
申请号：US15566678
申请日：2016-04-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adam Bauer , Andreas Loeffler
Abstract: The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).
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公开(公告)号：US20180182946A1
公开(公告)日：2018-06-28
申请号：US15737738
申请日：2016-06-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Loeffler , Thomas Hager , Christoph Walter , Alfred Lell
IPC: H01L33/64 , H01L33/62 , H01L33/48 , H01L25/16 , H01L31/167 , H01L31/02 , H01L31/024 , H01S5/024 , H01S5/022
Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.
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公开(公告)号：US09728674B2
公开(公告)日：2017-08-08
申请号：US15285447
申请日：2016-10-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
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Patent Agency Ranking
公开(公告)号：US11201454B2
公开(公告)日：2021-12-14
申请号：US16091172
申请日：2017-04-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Clemens Vierheilig , Alfred Lell , Sven Gerhard , Andreas Loeffler
Abstract: The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.
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公开(公告)号：US10388823B2
公开(公告)日：2019-08-20
申请号：US15594519
申请日：2017-05-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Andreas Loeffler , Christoph Eichler , Bernhard Stojetz , Andre Somers
IPC: H01L33/00 , H01L21/67 , H01L33/62 , H01L21/687 , H01L33/26 , H01L33/32 , H01S5/32 , H01S5/10 , H01S5/40 , H01S5/22 , H01S5/323 , H01S5/026 , H01S5/20 , H01S5/227
Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US20190052062A1
公开(公告)日：2019-02-14
申请号：US16079678
申请日：2017-02-23
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Andreas Loeffler , Clemens Vierheilig , Sven Gerhard
IPC: H01S5/40 , H01S5/02 , H01S5/042 , H01S5/343 , H01L33/24 , H01L33/00 , H01L33/22 , H01L33/32 , H01L25/16
Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.
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公开(公告)号：US20180323573A1
公开(公告)日：2018-11-08
申请号：US15773592
申请日：2016-11-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Clemens Vierheilig , Andreas Loeffler
CPC classification number: H01S5/0202 , H01S5/0224 , H01S5/02461 , H01S5/026 , H01S5/0425 , H01S5/22
Abstract: A semiconductor laser includes a semiconductor layer sequence, an active zone, a ridge waveguide as an elevation of a top side of the semiconductor layer sequence, the longitudinal axis of which is oriented along the active zone, a contact metalization, and a current flow layer in direct contact with the contact metalization, wherein the top side of the semiconductor layer sequence includes a section adjoining one of the two facets over the width of the section relative to a longitudinal axis of the ridge waveguide, the section includes a subsection of the top side of the ridge waveguide, the subsection adjoins one of two facets over a width of the ridge waveguide relative to the longitudinal axis of the ridge waveguide, the section is partly delimited by a plurality of current flow layer sections of the current flow layer, and the section is free of the current flow layer.
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公开(公告)号：US20150249181A1
公开(公告)日：2015-09-03
申请号：US14430198
申请日：2013-09-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
Abstract translation: 本发明涉及包含具有光活性层的层结构的光电子部件。 在第一横向区域中，光活性层具有比在第二横向区域中更高的V缺陷密度。
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