公开(公告)号：US12021351B2

公开(公告)日：2024-06-25

申请号：US17292197

申请日：2019-11-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/343

CPC classification number: H01S5/4031 ,  H01S5/02407 ,  H01S5/34346

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than |ΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.

公开(公告)号：US20200161836A1

公开(公告)日：2020-05-21

申请号：US16611372

申请日：2018-06-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/32 ,  H01S5/22 ,  H01S5/323

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US09559491B2

公开(公告)日：2017-01-31

申请号：US14910813

申请日：2014-08-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Horn ,  Bernhard Stojetz

IPC: H01S3/04 ,  H01S5/024 ,  H01S5/022 ,  H01S5/40

CPC classification number: H01S5/02469 ,  H01S5/0222 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/4018 ,  H01S5/4031

Abstract: A laser component includes a laser chip having a top side, an underside, a first side surface and a second side surface, which are oriented parallel to a resonator of the laser chip, wherein an underside of the laser chip is arranged in a manner bearing on a carrier, a top side of the laser chip is arranged in a manner bearing on a further carrier, the laser chip is hermetically tightly encapsulated between the carrier and the further carrier, a second electrical contact pad of the laser chip, said second electrical contact pad being formed on the top side of the laser chip, electrically conductively connects to a second electrical mating contact pad formed on the further carrier, and the first side surface of the laser chip thermally conductively connects to a heat sink.

Abstract translation: 激光组件包括具有平行于激光芯片的谐振器的顶侧，下侧，第一侧表面和第二侧表面的激光芯片，其中激光芯片的下侧以轴承方式布置 在载体上，激光芯片的顶侧以与另一个载体相关的方式布置，激光芯片气密地封装在载体和另外的载体之间，激光芯片的第二电接触焊盘，所述第二电极 接触垫形成在激光芯片的顶侧，导电地连接到形成在另一个载体上的第二电配合接触焊盘，并且激光芯片的第一侧表面热传导地连接到散热器。

公开(公告)号：US09048630B2

公开(公告)日：2015-06-02

申请号：US14031991

申请日：2013-09-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/02 ,  H01S5/065

CPC classification number: H01S5/22 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0653 ,  H01S5/2022 ,  H01S5/3013 ,  H01S5/34313 ,  H01S5/34333 ,  H01S2301/17

Abstract: A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.

Abstract translation: 半导体激光二极管包括基板。 衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。 至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光 光。

公开(公告)号：US20220263293A1

公开(公告)日：2022-08-18

申请号：US17594399

申请日：2020-04-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Muhammad Ali ,  Harald König ,  Bernhard Stojetz ,  Alfred Lell

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/30 ,  H01S5/02315

Abstract: In one embodiment, the semiconductor laser comprises a carrier and one or more laser bars. The at least one laser bar comprises at least three individual lasers arranged parallel to each other. A deflection optic is arranged downstream of the individual lasers in common. The at least one laser bar and the associated deflection optic are mounted on the carrier and comprise a distance from one another of at most 4 mm.

公开(公告)号：US10985529B2

公开(公告)日：2021-04-20

申请号：US16318084

申请日：2017-07-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/10 ,  H01S5/22

Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

公开(公告)号：US20190013642A1

公开(公告)日：2019-01-10

申请号：US16069674

申请日：2017-02-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler

IPC: H01S5/022 ,  H01S5/026 ,  H01S5/40 ,  H01S5/323

CPC classification number: H01S5/02292 ,  H01S3/005 ,  H01S3/0071 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/026 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4087

Abstract: A semiconductor light source is disclosed. In an embodiment a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one coupling-out element comprising a continuous base region and rigid light guide columns extending away from the base region, the light guide columns acting as waveguides for the primary radiation, wherein the primary radiation is irradiated into the base region during operation, is led through the base region to the light guide columns and is directionally emitted from the light guide columns so that an intensity half-value angle of the emitted primary radiation is at most 90°.

公开(公告)号：US20180323581A1

公开(公告)日：2018-11-08

申请号：US15773162

申请日：2016-11-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler ,  André Somers

IPC: H01S5/40 ,  H01S5/022 ,  H01S5/026 ,  H01S5/00 ,  G03B21/20 ,  H01S5/20 ,  H01S5/343 ,  F21S41/16 ,  H01S5/42 ,  B23K26/21

CPC classification number: H01S5/4093 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/02252 ,  H01S5/026 ,  H01S5/0287 ,  H01S5/1028 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087 ,  H01S5/426 ,  H01S2304/12

Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.

公开(公告)号：US20150244147A1

公开(公告)日：2015-08-27

申请号：US14418923

申请日：2013-07-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler

IPC: H01S5/10 ,  H01S5/343 ,  H01S5/323 ,  H01S5/028

CPC classification number: H01S5/1082 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0287 ,  H01S5/32341 ,  H01S5/343 ,  H01S2301/02 ,  H01S2301/18

Abstract: A method for producing a semiconductor laser diode is specified, comprising the following steps:—epitaxial iv growing a semiconductor layer sequence (2) having at least one active layer (3) on a growth substrate (1)—forming a front facet (5) on the semiconductor layer sequence (2) and the growth. substrate (1), wherein the front facet (5) is designed as a main. emission surface having a light emission region (6) for the laser light (30) generated in the completed semiconductor laser diode,—forming a coupling-out coating (9) on a second part (52) of the front facet (5), wherein the first. part (51) and the second part (52) are arranged at least partly alongside one another in a direction parallel to the front facet (5) and along a growth direction of the semiconductor layer sequence (2), such that the first part (51) is at least partly free of the coupling-out coating (9) and the second part (52) is at least partly free of the light blocking layer (8), and wherein the second part (52) has the light exit region (6),—forming a light blocking layer (8) on a first part (51) of the front facet (5). Furthermore, a semiconductor laser diode is specified.

Abstract translation: 规定了制造半导体激光二极管的方法，包括以下步骤：外延生长在生长衬底（1）上具有至少一个活性层（3）的半导体层序列（2），形成前面（5） ）在半导体层序列（2）上和生长。 基板（1），其中所述前刻面（5）被设计为主体。 具有在完成的半导体激光二极管中产生的用于激光（30）的发光区域（6）的发射表面，形成在所述前刻面（5）的第二部分（52）上的耦合输出涂层（9） 其中第一。 部分（51）和第二部分（52）至少部分地沿着平行于前面（5）的方向并沿着半导体层序列（2）的生长方向彼此并排布置，使得第一部分 51）至少部分地不具有耦合出的涂层（9），并且第二部分（52）至少部分地没有遮光层（8），并且其中第二部分（52）具有光出射区域 （6）， - 在所述前刻面（5）的第一部分（51）上形成遮光层（8）。 此外，规定了半导体激光二极管。

公开(公告)号：US20210391695A1

公开(公告)日：2021-12-16

申请号：US17292197

申请日：2019-11-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/343

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.