公开(公告)号：US20210391695A1

公开(公告)日：2021-12-16

申请号：US17292197

申请日：2019-11-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/343

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.

公开(公告)号：US20190235261A1

公开(公告)日：2019-08-01

申请号：US16320550

申请日：2017-07-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler ,  Harald König ,  André Somers ,  Clemens Vierheilig

IPC: G02B27/22 ,  H04N13/305

CPC classification number: G02B27/2214 ,  G02B27/2235 ,  G02B27/2264 ,  H04N13/305 ,  H04N13/307 ,  H04N13/32

Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

公开(公告)号：US20180048114A1

公开(公告)日：2018-02-15

申请号：US15559725

申请日：2016-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alfred Lell ,  Harald König ,  Adrian Stefan Avramescu

IPC: H01S5/026

CPC classification number: H01S5/026 ,  H01S5/0207 ,  H01S5/164 ,  H01S5/168 ,  H01S5/3211 ,  H01S2304/00

Abstract: An edge-emitting semiconductor laser includes a semiconductor structure laterally bounded by first and second facets and having a central section and a first edge section, a layer sequence offset relative to the central section in the growth direction in the first edge section such that, in the first edge section, one of the cladding layers or one of the waveguide layers is arranged in the growth direction at a height of the active layer in the central section, the layer sequence includes an epitaxially grown additional layer arranged between the upper side and the lower cladding layer, the additional layer is not arranged between the upper side and the lower cladding layer in the central section, and the additional layer is electrically insulating or has doping with the opposite sign to the lower cladding layer.

公开(公告)号：US20170310081A1

公开(公告)日：2017-10-26

申请号：US15649437

申请日：2017-07-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Lauer ,  Harald König ,  Uwe Strauss ,  Alexander Bachmann

IPC: H01S5/024 ,  H01S5/10 ,  H01S5/20 ,  H01S5/042 ,  H01S5/022

CPC classification number: H01S5/02469 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/2036 ,  H01S5/2054

Abstract: A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

公开(公告)号：US12021351B2

公开(公告)日：2024-06-25

申请号：US17292197

申请日：2019-11-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Bernhard Stojetz ,  Alfred Lell ,  Muhammad Ali

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/343

CPC classification number: H01S5/4031 ,  H01S5/02407 ,  H01S5/34346

Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than |ΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.

公开(公告)号：US09450376B2

公开(公告)日：2016-09-20

申请号：US14420411

申请日：2013-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Markus Arzberger ,  Christoph Walter ,  Tomasz Swietlik ,  Harald König ,  Robin Fehse ,  Mathias Kämpf ,  Markus Graul ,  Markus Horn

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。

公开(公告)号：US20150207293A1

公开(公告)日：2015-07-23

申请号：US14420411

申请日：2013-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Markus Arzberger ,  Christoph Walter ,  Tomasz Swietlik ,  Harald König ,  Robin Fehse ,  Mathias Kämpf ,  Markus Graul ,  Markus Horn

IPC: H01S5/02 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。

公开(公告)号：US20220263293A1

公开(公告)日：2022-08-18

申请号：US17594399

申请日：2020-04-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Muhammad Ali ,  Harald König ,  Bernhard Stojetz ,  Alfred Lell

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/30 ,  H01S5/02315

Abstract: In one embodiment, the semiconductor laser comprises a carrier and one or more laser bars. The at least one laser bar comprises at least three individual lasers arranged parallel to each other. A deflection optic is arranged downstream of the individual lasers in common. The at least one laser bar and the associated deflection optic are mounted on the carrier and comprise a distance from one another of at most 4 mm.

公开(公告)号：US20160141837A1

公开(公告)日：2016-05-19

申请号：US14895542

申请日：2014-06-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alvaro Gomez-Iglesias ,  Harald König ,  Christian Lauer

IPC: H01S5/20

CPC classification number: H01S5/2031 ,  H01S5/1014 ,  H01S5/1082 ,  H01S5/209 ,  H01S5/3213 ,  H01S2301/18

Abstract: An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.

Abstract translation: 边缘发射半导体激光器包括具有具有有源层的波导层的半导体结构，该波导层在半导体结构的第一和第二侧面之间沿纵向方向延伸，该半导体结构具有与第一侧相邻的锥形区域 锥形区域中的波导层的厚度纵向增加，波导层布置在第一和第二包层之间，半导体结构的锥形区域中的第二包层的厚度纵向增加，锥形区域包括第一 和第二子区域，第一子区域布置成比第二子区域更靠近第一侧面，波导层的厚度在第一子区域中纵向增加，波导层的厚度在第二子区域中的纵向方向上是恒定的，并且厚度 的第二包层增加了纵向 在第二个次区域内。

公开(公告)号：US20220013980A1

公开(公告)日：2022-01-13

申请号：US17297858

申请日：2019-11-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Alfred Lell

IPC: H01S5/024 ,  H01S5/0225

Abstract: An optoelectronic semiconductor laser component is specified. The optoelectronic semiconductor laser component comprises a semiconductor body with a first main surface, a second main surface, at least one active region formed between the first main surface and the second main surface, an output coupling surface extending from the first main surface to the second main surface, through which at least a part of the electromagnetic radiation is coupled out, a first heat sink arranged on the first main surface and a second heat sink arranged on the second main surface, and an optical protective element arranged downstream of the output coupling surface, for which the first heat sink and/or the second heat sink form a carrier. The outcoupling takes place in a main emission direction. Electrical contacting of the semiconductor body takes place by means of the first heat sink and the second heat sink. The first heat sink and/or the second heat sink comprise mounting surfaces on a side opposite the output coupling surface, on a side opposite the first main surface and/or on a side opposite the second main surface. A method for producing an optoelectronic semiconductor laser component is further specified.