公开(公告)号：US11011887B2

公开(公告)日：2021-05-18

申请号：US16471330

申请日：2017-12-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

公开(公告)号：US20200091681A1

公开(公告)日：2020-03-19

申请号：US16471330

申请日：2017-12-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/028 ,  H01S5/22 ,  H01S5/20

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

公开(公告)号：US10396106B2

公开(公告)日：2019-08-27

申请号：US15594482

申请日：2017-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Andre Somers ,  Harald Koenig ,  Bernhard Stojetz ,  Andreas Loeffler ,  Alfred Lell

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/22 ,  H01S5/223 ,  H01S5/20

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20190235261A1

公开(公告)日：2019-08-01

申请号：US16320550

申请日：2017-07-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler ,  Harald König ,  André Somers ,  Clemens Vierheilig

IPC: G02B27/22 ,  H04N13/305

CPC classification number: G02B27/2214 ,  G02B27/2235 ,  G02B27/2264 ,  H04N13/305 ,  H04N13/307 ,  H04N13/32

Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.

公开(公告)号：US20190199056A1

公开(公告)日：2019-06-27

申请号：US16311868

申请日：2017-06-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Sven Gerhard ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/22 ,  H01S5/028 ,  H01S5/40

Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.

公开(公告)号：US20190089125A1

公开(公告)日：2019-03-21

申请号：US16081881

申请日：2017-03-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Sven Gerhard

IPC: H01S5/022 ,  H01S5/10 ,  H01S5/22 ,  H01S5/40 ,  H01S5/028 ,  H01L33/62 ,  H01L33/44 ,  H01L33/20 ,  H01S5/024 ,  H01L33/64

CPC classification number: H01S5/02272 ,  H01L33/20 ,  H01L33/44 ,  H01L33/483 ,  H01L33/62 ,  H01L33/647 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01S5/02469 ,  H01S5/028 ,  H01S5/1003 ,  H01S5/22 ,  H01S5/4025 ,  H01S2301/176

Abstract: An optoelectronic lighting device includes an optoelectronic semiconductor chip including a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, the semiconductor layer sequence includes an active zone that generates electromagnetic radiation, and a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside.

公开(公告)号：US10027090B2

公开(公告)日：2018-07-17

申请号：US15498751

申请日：2017-04-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Teresa Wurm

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/30 ,  H01S5/343

Abstract: A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. The single quantum well structure includes a quantum well layer, which is arranged between a first barrier layer and a second barrier layer, wherein the first barrier layer faces the n-type semiconductor region, and the second barrier layer faces the p-type semiconductor region. An electronic bandgap EQW of the quantum well layer is smaller than an electronic bandgap EB1 of the first barrier layer and smaller than an electronic bandgap EB2 of the second barrier layer, and the electronic bandgap EB1 of the first barrier layer is larger than the electronic bandgap EB2 of the second barrier layer.

公开(公告)号：US10020421B2

公开(公告)日：2018-07-10

申请号：US15539996

申请日：2015-12-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Adrian Stefan Avramescu

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic radiation, wherein the active zone has at least two quantum films, wherein the first quantum film is arranged between a first barrier layer and a second barrier layer, wherein the second quantum film is arranged between the second barrier layer and a last barrier layer, and wherein bandgaps of the first barrier layer and of the second barrier layer are related differently to one another than bandgaps of the second barrier layer and of the last barrier layer.

公开(公告)号：US09559497B2

公开(公告)日：2017-01-31

申请号：US14951220

申请日：2015-11-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

Abstract translation: 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向发射的非相干的第二电磁辐射。 滤波器结构具有布置在半导体层序列的具有平行于发射方向的延伸方向的区域上的至少一个滤波器元件。 所述至少一个过滤元件包括表面结构，所述表面结构包括粗糙化和/或至少一层包含不透明材料的层。

公开(公告)号：US20160211646A1

公开(公告)日：2016-07-21

申请号：US14704532

申请日：2015-05-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adrian Stefan Avramescu ,  Clemens Vierheilig ,  Christoph Eichler ,  Alfred Lell ,  Jens Mueller

IPC: H01S5/042 ,  H01S5/024 ,  H01S5/22

CPC classification number: H01S5/0425 ,  H01L2224/4847 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01S5/02276 ,  H01S5/02461 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/176 ,  H01L2924/00

Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。