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公开(公告)号：US20200287355A1
公开(公告)日：2020-09-10
申请号：US16305908
申请日：2017-06-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Clemens Vierheilig , Andreas Löffler , Sven Gerhard
Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US20140362883A1
公开(公告)日：2014-12-11
申请号：US14264980
申请日：2014-04-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Uwe Strauss , Soenke Tautz , Clemens Vierheilig
CPC classification number: H01S5/3013 , H01L2224/29101 , H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/02484 , H01S5/02492 , H01S5/028 , H01S5/0282 , H01S5/2036 , H01S5/30 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.
Abstract translation: 激光二极管组件包括具有壳体部分和安装部分的壳体，该壳体部分和安装部分连接到壳体部分并且沿着延伸方向远离壳体部分延伸。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于2μm的第一焊料层。 激光二极管芯片具有辐射耦合输出区域，在其上施加结晶保护层。
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3.发明授权公开(公告)号：US11309459B2
公开(公告)日：2022-04-19
申请号：US16495144
申请日：2018-04-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Clemens Vierheilig , Philipp Kreuter , Rainer Hartmann , Michael Binder , Tobias Meyer
Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.
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公开(公告)号：US10608413B2
公开(公告)日：2020-03-31
申请号：US16099644
申请日：2017-04-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Clemens Vierheilig , Andreas Löffler
IPC: H01S5/40 , H01S5/042 , H01S5/068 , H01S5/0683
Abstract: The invention relates to a laser assembly, wherein, in one embodiment, the laser assembly (1) comprises a plurality of laser groups (2) each having at least one semiconductor laser (20). Furthermore, the laser assembly (1) contains a plurality of photothyristors (3), each laser group (2) being clearly assigned one of the photothyristors (3). The photothyristors (3) are each connected electrically in series with the associated laser group (2) and/or integrated in the associated laser group (2). Furthermore, the photothyristors (3) are each optically coupled to the associated laser group (2). A dark breakdown voltage (Ut) of each photothyristor (3) lies above an intended operating voltage (Ub) of the associated laser group (2).
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公开(公告)号：US20190235261A1
公开(公告)日：2019-08-01
申请号：US16320550
申请日：2017-07-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler , Harald König , André Somers , Clemens Vierheilig
IPC: G02B27/22 , H04N13/305
CPC classification number: G02B27/2214 , G02B27/2235 , G02B27/2264 , H04N13/305 , H04N13/307 , H04N13/32
Abstract: A method of autostereoscopic imaging including providing an autostereoscopic illumination unit including a lens field composed of a multiplicity of individual lenses or concave mirrors, and modulating an emission characteristic of the light source such that the individual lenses or the concave mirrors are illuminated only partly by the light source, wherein light from the light source impinges on the individual lenses or concave mirrors such that an emission characteristic of a three-dimensional object is imitated, the lens field extends over a spatial angle range of at least 2 sr relative to the light source or an external observer, the individual lenses or concave mirrors are distributed over the lens field and are at least partially sequentially irradiated, and the light source is formed by one or more lasers and the laser or each of the lasers irradiates/irradiate only one of the individual lenses at a specific point in time.
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Patent Agency Ranking
公开(公告)号：US20190013649A1
公开(公告)日：2019-01-10
申请号：US15752442
申请日：2016-09-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Clemens Vierheilig , Andreas Löffler
CPC classification number: H01S5/323 , H01S5/028 , H01S5/0281 , H01S5/0425 , H01S5/1082 , H01S5/16 , H01S5/162 , H01S5/166 , H01S5/22 , H01S5/221
Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.
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公开(公告)号：US20160211646A1
公开(公告)日：2016-07-21
申请号：US14704532
申请日：2015-05-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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公开(公告)号：US09356423B2
公开(公告)日：2016-05-31
申请号：US14496975
申请日：2014-09-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Karsten Auen , Clemens Vierheilig
CPC classification number: H01S5/02272 , H01S5/022 , H01S5/02212 , H01S5/02469 , H01S5/02476 , H01S5/0282 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part.
Abstract translation: 激光二极管组件包括壳体，壳体具有壳体部分和连接到壳体部分并且沿着延伸方向远离壳体部分延伸的安装部分。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于3μm的第一焊料层。
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公开(公告)号：US09331453B2
公开(公告)日：2016-05-03
申请号：US14373998
申请日：2013-03-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauβ , Sönke Tautz , Alfred Lell , Clemens Vierheilig
CPC classification number: H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/0262 , H01S5/32341 , H01S2301/176
Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.
Abstract translation: 激光二极管器件具有在安装部分的壳体中具有基于氮化物复合半导体材料的安装部分和激光二极管芯片的壳体。 激光二极管芯片通过焊料层直接安装在安装部分上，焊料层的厚度大于或等于3μm。
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公开(公告)号：US09008138B2
公开(公告)日：2015-04-14
申请号：US13859446
申请日：2013-04-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Clemens Vierheilig
CPC classification number: H01S5/02236 , H01S5/02268 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/028 , H01S5/22 , H01S2301/176
Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm.
Abstract translation: 一种激光二极管装置，其特征在于，包括具有安装部的壳体和基于安装部上的壳体中的氮化物化合物半导体材料的激光二极管芯片，其中，使用焊料层将激光二极管芯片直接安装在安装部上 焊料层的厚度大于或等于3μm。
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